ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (7)
  • 1
    Electronic Resource
    Electronic Resource
    On the environment of optically active Er in Si-electroluminescence devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 809-811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report sharp, atomlike electroluminescence spectra close to 1.54 μm from a low-dose (3.5×1018 cm−3) erbium-implanted silicon light-emitting diode operating under forward bias. The well-resolved Stark splitting identifies the isolated interstitial Er with cubic site symmetry as the source. The full width at half maximum of the most intense line is 0.5 nm. A comparison with a highly Er (5×1019 cm−3) and O (1×1020 cm−3) doped diode with a high doping gradient grown by molecular beam epitaxy and with Er-implanted silica is given with respect to fine structure and thermal quenching. The room-temperature emission of the highly Er and O doped diode is ascribed to Er containing silica precipitates within the c-Si matrix. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120900
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Investigation of DX centers in AlxGa1−xAs by space charge spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1051-1056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a critical analysis of both deep level transient spectroscopy and transient microwave absorption spectroscopy (MAS) for the case of DX centers in AlGaAs. We show that, even for a single level, a strongly nonexponential time dependence of the transients occurs. Our MAS experiments on Si-DX centers in Al0.3Ga0.7As extend the available data for the emission rates by more than three orders of magnitude. They are successfully interpreted by a single emission time constant using our model whereas at least three decay time constants are needed to explain the data by a pure exponential. Observed recapture processes in the neutral region of the sample underline the complexity of space charge spectroscopy in the case of the DX center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354952
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 537-539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the photoluminescence (PL) in nanoporous Si (po-Si) doped with Er by electrochemical deposition and by spin-on doping. Two kinds of optically active Er centers appear in electrochemically doped po-Si with the main sharp and intense lines at 1.548 and 1.539 μm, respectively. The features characteristic for the spin-on doping method are: intense dislocation-related PL at 1.53 μm and strong luminescent activity of the silica gel used for Er doping. High-temperature PL observed up to 360 K is attributed to Er centers incorporated in the silica-like matrix at the oxidized surface of electrochemically doped po-Si and in erbium-containing silica gel. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123179
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    On the local structure of optically active Er centers in Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 490-492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report high resolution (〈0.05 cm−1) photoluminescence (PL) spectra of erbium implanted float-zone (FZ) and Czochralski grown (CZ) silicon. We show that the PL spectrum of cubic Er centers observed in CZ-Si annealed at 900°C is the dominant emission in FZ-Si for the same annealing conditions. We assign it to isolated, interstitial erbium. We observe also two other kinds of optically active Er centers with lower than cubic site symmetry: (i) O-related (found only in CZ Si) and (ii) those related to radiation defects. We conclude that coimplantation with light elements does not lead to the formation of Er-codopant complexes, but rather to Er forming complexes with implantation induced lattice defects. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114066
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Metastable and nonmetastable deep states of Ge in GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3209-3211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show from transport investigations that Ge doped GaAs can be either semimetallic or semiconducting depending on hydrostatic pressure and previous sample illumination. This property results from a unique crossover of two states of the Ge donor in GaAs in their energetic position under pressure. The experimental results obtained make it possible to identify the nature of these Ge-donor states: The drastic enhancement of the electron mobility after illumination is taken as evidence of the electron transfer from the two-electron DX− state to a neutral, localized, and unrelaxed state of the Ge donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110787
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Direct excitation spectroscopy of Er centers in porous silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2975-2977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report direct excitation of optically active Er centers in porous Si. Excitation spectroscopy performed close to the intracenter 4I15/2→4I11/2 and 4I15/2→4I9/2 transitions of Er3+ (4f11) ions allows us to identify two kinds of Er centers in porous Si: (i) Er diffused into porous nanograins with lower than cubic symmetry and (ii) Er centers incorporated in an amorphous silicalike matrix. The latter show much weaker thermal quenching of the Er3+ emission which decreases only by a factor of eight when the temperature is increased from 4.2 K up to 360 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120234
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of Zn1−xMnxTe epilayers grown by hot wall epitaxy on (001)GaAs substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2368-2370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the first growth of Zn1−xMnxTe epitaxial films. The films were grown by hot wall epitaxy on 2° misoriented (001) GaAs substrates up to a Mn concentration of 70%. The Mn content was determined by optical reflection and x-ray diffraction. All the epilayers (0.0≤x≤0.7) grew in the [001] direction in the zinc-blende structure. The full width at half maximum of the (004) reflex of the x-ray rocking curves proved the good crystalline quality of the grown layers and increased monotonically as the Mn content increased. The relative tilt between epilayer and substrate was also determined from high resolution x-ray diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107028
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...