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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6321-6321 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic critical neutron scattering from a single crystal of Cr+0.18 at. % Re was observed above its Néel transition (323 K) to an incommensurate spin density wave state. The data were analyzed in terms of the critical susceptibility model that successfully fit analogous data from single crystals of pure chromium and Cr+0.2 at. % V. An additional complication in this case is the fact that a small portion of the sample becomes commensurate antiferromagnetic at a temperature well above 323 K, which causes a commensurate magnetic Bragg peak that partially obscures the critical scattering near 323 K. The "Sato-Maki'' form of incommensurate critical susceptibility fits the data reasonably well. The intensity of magnetic critical scattering in Cr+0.18 at. % Re is about a factor 2 stronger than in pure Cr, whereas in Cr+0.2 at. % V it is about the same factor weaker.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 199-206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of high-resistivity regions in Si-doped (n=1×1018 cm−3) lattice-matched In0.75Ga0.25As0.54P0.46 on InP by nitrogen and boron ion irradiations at 300 K, and by helium ion bombardment at 80, 300, and 523 K has been investigated as function of ion dose (1×1012–1×1016 cm−2) and subsequent anneal temperature (70–650 °C) by sheet resistance and Hall effect measurements. The dose dependence of the sheet resistance shows two regions for all cases considered: (I) for lower doses in which the sheet resistance (resistivity) increases up to a maximum of about 6×106 Ω/(D'Alembertian) (180 Ω cm), and (II) for higher doses in which the sheet resistance decreases with dose. Temperature dependent Hall measurements for materials in region (I) show thermally activated carrier densities with activation energies between 0.21 and 0.29 eV. The temperature dependence of the sheet resistance in region (II), on the other hand, is consistent with the assumption of a hopping conductivity. Varying the substrate temperature during the irradiations yields no measurable effects for samples implanted in region (I). For the case of He+ bombardments at 523 K, higher sheet resistances are obtained in region (II) as compared to samples irradiated at lower temperatures. For the case of He+ at 80 K and N+ at 300 K a third region (III) is observed for doses higher than 7 and 2×1014 cm−2, respectively, in which a renewed increase in the sheet resistance with increasing dose is detected. Rutherford backscattering-channeling results suggest that this behavior is related to the creation of an amorphouslike region in the InGaAsP layer. Annealing of samples amorphized by He+ at 80 K yields higher resistivities (up to a factor of 6×105 relative to that of the unimplanted material), and improved stability of the high resistivity as compared to the other implantation schedules investigated.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2126-2128 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of high-resistivity regions in Si-doped (n=1×1018 cm−3) lattice-matched In0.75Ga0.25As0.54P0.46 on InP by helium ion bombardment at 300 and 80 K has been investigated as a function of ion dose (1×1012–1×1016 cm−2) and subsequent annealing temperature (70–650 °C) by sheet resistance and Hall effect measurements as a function of temperature. Irradiations at 300 K are found to induce an increase in the resistivity by a factor of up to 3×105 relative to that of the unimplanted material. Materials bombarded at 80 K with doses higher than 7×1014 cm−2 exhibit a further increase in the sheet resistance and higher stability upon subsequent annealing. Rutherford backscattering channeling results suggest that this behavior is related to the creation of a highly polycrystalline or amorphous region in the InGaAsP layer which occurs for irradiations performed at 80 K, but not at 300 K.
    Type of Medium: Electronic Resource
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  • 4
    Publication Date: 2016-04-05
    Description: In this work, we present a reversible ferroelectric molecular switch controlled by an external electric field. The studied (2Z)-1-(6-((Z)-2-hydroxy-2-phenylvinyl)pyridin-3-yl)-2-(pyridin-2(1H)-ylidene)ethanone ( DSA ) molecule is polarized by two uniaxial intramolecular hydrogen bonds. Two protons can be transferred along hydrogen bonds upon an electric field applied along the main molecular axis. The process results in reversion of the dipole moment of the system. Static ab initio and on-the-fly dynamical simulations of the DSA molecule placed in an external electric field give insight into the mechanism of the double proton transfer (DPT) in the system and allow for estimation of the time scale of this process. The results indicate that with increasing strength of the electric field, the step-wise mechanism of DPT changes into the downhill barrierless process in which the synchronous and asynchronous DPTs compete with each other.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
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