ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p+ layer to 0.89 eV for a sample with a 20-nm-thick p+ layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3007-3018 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report synthesis of diamond nanocrystals directly from carbon atoms embedded into fused silica by ion implantation followed by thermal annealing. The production of the diamond nanocrystals and other carbon phases is investigated as a function of ion dose, annealing time, and annealing environment. We observe that the diamond nanocrystals are formed only when the samples are annealed in forming gas (4% H in Ar). Transmission electron microscopy studies show that the nanocrystals range in size from 5 to 40 nm, depending on dose, and are embedded at a depth of only 140 nm below the implanted surface, whereas the original implantation depth was 1450 nm. The bonding in these nanocrystals depends strongly on cluster size, with the smaller clusters predominantly aggregating into cubic diamond structure. The larger clusters, on the other hand, consist of other forms of carbon such as i-carbon and n-diamond and tend to be more defective. This leads to a model for the formation of these clusters which is based on the size dependent stability of the hydrogen-terminated diamond phase compared to other forms of carbon. Additional studies using visible and ultraviolet Raman Spectroscopy, optical absorption, and electron energy loss spectroscopy reveal that most samples contain a mixture of sp2 and sp3 hybridized carbon phases. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3778-3780 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-field electrical conduction has been studied in undoped polycrystalline diamond over a wide temperature range. The current increases exponentially with the electric field with an exponential factor which increases linearly with the inverse of temperature. The activation energy of the conductivity is found to be strongly field dependent and to decrease linearly with the electric field. The experimental data support a Poole–Frenkel conduction with overlapping centers. The centers are found to be located at around 1.1 eV from the band edge with a density of about 2×1017 cm−3. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1809-1811 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoSi2 epitaxial layers with different thicknesses have been grown onto porous-Si substrates by molecular beam epitaxy. Good crystallinity is obtained for CoSi2 films thicker than 50 nm. The use of a thin buffer layer is found to be crucial in order to achieve abrupt interface and good crystallinity. Planar view transmission electron microscope images obtained from 30-nm-thick CoSi2 buffer-Si/porous-Si samples indicate that a large area of the epitaxial film is dislocation free, in contrast with a uniform distribution of misfit dislocations across relaxed CoSi2/single-crystal Si samples of the same thickness. This study suggests a possible pseudomorphic growth by using porous Si as a substrate.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5006-5013 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation damage induced by 2 MeV alpha particles in polycrystalline diamond films has been studied as a function of the irradiation dose D (1012≤D≤1017 cm−2). The films were characterized using Raman/photoluminescence spectroscopy and I(V,T) measurements. The results can be summarized as follows. In undoped samples the H3 luminescent center (N–V–N) is observed for D≥1014 cm−2. The Raman diamond peak is broadened and shifted to lower frequencies for D(approximately-greater-than)1015 cm−2. No new graphitic component is detected after irradiation. On the contrary graphitic sp2 defects are annealed by irradiation. For D=3×1016 cm−2 new Raman defect peaks are detected at 1496 and 1635 cm−1. I(V,T) characteristics remain unaffected for D≤1016 cm−2. An increase in the conductivity is observed for D=3×1016 cm−2. At this dose we observe an activation energy of 0.4 eV and thermally stimulated currents related to defect levels at about 0.3 eV. A boron-doped sample (100 Ω cm) has been irradiated at 1017 cm−2 for comparison. After irradiation the conductivity of this sample is reduced and the activation energy of the conductivity is also reduced. Less damage is detected by Raman spectroscopy in the B-doped material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1492-1494 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deeply buried boron doped layers are realized in single crystal diamond using MeV ion implantation. Contact to the buried layers is accomplished using pulsed focused laser irradiation which is selectively absorbed in the implanted layer to form a graphite column up to the surface. The contacts are ohmic over a wide range of applied voltage. Implantation induced defects that are responsible for compensation of the acceptors are identified. It is found that removal of these defects requires annealing temperatures of about 1450 °C, but once these defects are removed the buried B doped layer displays excellent activation of the acceptors with an activation energy of 0.372 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2062-2064 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond deeply implanted with 4 MeV P ions to a dose of 1×1015/cm2 is annealed by a focused pulsed laser that is selectively absorbed by the implanted damaged layer. Laser treatment with multiple pulses at ever increasing power leads to excellent regrowth as measured by channeling Rutherford backscattering spectroscopy, surface profilometry, and by optical transmission. The importance of the deep implantation and the potential of this method for doping diamond is demonstrated.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2996-2998 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stimulated currents (TSC) were studied in polycrystalline diamond films to gain information about the trap levels in this material. The TSC glow curve is composed of a dominant peak at 555 K with smaller overlapping peaks in the 400–500 K range. The analysis of the TSC isothermal decay at high temperatures shows that the peak at 555 K is related to a trap level at 1.86 eV. The dose response and the room temperature fading rate of TSC were measured in order to evaluate the potential of these films for UV radiation dosimetry. The TSC are found to increase sublinearly with the dose over three decades and to decay with the logarithm of the storage time at room temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1238-1240 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that the dark electrical properties of polycrystalline chemical vapor deposition diamond films are modified after exposure to UV light. UV illumination gives rise to an increase in the dark conductivity and to a change in the I–V characteristic from Iα exp (aV) for the as-grown material to IαV2 following UV irradiation. Thermally stimulated currents corresponding to an activation energy of about 1.9 eV are observed after UV illumination. The effects of UV irradiation can be totally reversed by thermal annealing and partially reversed by exposing the samples to white light. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1962-1964 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of MeV α particles to generate ion beam induced charge images with a signal to noise level approximately ten times larger than previously obtained using protons is described. The effect of α particle induced damage on the resultant image contrast is shown and a method of image formation in which the effects of ion induced damage are compensated for is described which enables the use of a higher ion dose.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...