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  • 1
    Electronic Resource
    Electronic Resource
    Charge transfer model and three body-scattering (1995)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 36 (1995), S. 115-132 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The asymptotics of total scattering cross sections for a three-body quantum system with two heavy particles are studied when the masses tend to infinity. It is assumed that the initial channel is a two-cluster channel such that a light particle and a heavy one form a bound state and the relative velocity of another heavy particle to the pair is fixed. It is shown that the limits exist and they can be expressed in terms of transition probabilities which appear in the scattering theory for the charge transfer models. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.531295
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal conversion and hydrogenation effects in AlGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2772-2774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal conversion of molecular-beam epitaxially (MBE) grown AlGaAs from semi-insulating to p-type caused by annealing has been studied using Hall-effect and photoluminescence measurements. The presence of C impurities causes thermal conversion of the AlGaAs layers. A key observation is that residual C impurities can be greatly reduced by increasing growth temperature. Thermodynamic evaluation of adsorption kinetics suggests that C incorporation during AlGaAs MBE is chemisorptive. The effects of hydrogenation in MBE AlGaAs have also been studied and indicate that thermally activated C acceptors and nonradiative recombination centers can be passivated with this treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341627
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  • 3
    Electronic Resource
    Electronic Resource
    Minority-electron mobility in p-type GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5197-5199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mobility of photoinduced minority electrons in molecular-beam epitaxially grown p-GaAs has been measured directly by the Hall method. The electron mobility in a 1×1017 cm−3 Be-doped sample was about 3500 cm2 /V s at room temperature. Temperature dependence of minority electron mobility is clearly different from that of majority-hole mobility in the same sample. This result indicates the difference in dominant scattering mechanisms for electrons and holes in p-type GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343150
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  • 4
    Electronic Resource
    Electronic Resource
    Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4017-4023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is known that high n+ doping in the cap layers of heterojunction bipolar transistor structures induces anomalous Zn diffusion in the base region during metalorganic vapor phase epitaxial growth. This phenomenon has been explained in terms of nonequilibrium group III interstitials generated in the n+ cap layer, which create highly diffusive Zn interstitials via the kick-out mechanism. In this article, we show that low-temperature growth (550 °C) is effective in alleviating the influence of the n+ cap layer. Due to a large time constant for the recovery of thermal point-defect equilibrium, the last-to-grow n+ cap layer cannot inject the excessive group III interstitials into the base region within a growth sequence. Under the low-temperature growth, however, the first-to-grow n+ subcollector produces group III interstitials during the whole growth sequence and thereby causes anomalous Zn diffusion. To prevent this effect, we propose interrupting the growth for a long time period (30 min) before growing the base layer, and growing the n+ subcollector at a higher temperature (600 °C). These growth techniques are shown to be effective in purging the subcollector of the undesirable group III interstitials before base-layer formation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361830
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  • 5
    Electronic Resource
    Electronic Resource
    Surface cleaning of C-doped p+ GaAs with hydrogen electron cyclotron resonance plasma (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8146-8150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report surface cleaning of C-doped p+-GaAs epilayers with hydrogen electron cyclotron resonance plasma. Native oxides on the surface of the p+-GaAs layer can be removed at a very low substrate temperature of 150 °C. In addition, carrier concentrations decrease after cleaning at about 300 °C, which is attributed to the hydrogenation of carbon acceptors caused by hydrogen plasma exposure. A cleaning temperature of about 400 °C, a cleaning time of about 5 min, and microwave power of about 30 W appear to be optimum for the regrowth process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353454
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  • 6
    Electronic Resource
    Electronic Resource
    Improvement of magneto-optical characteristics of TbFeCo/Al bilayered films at a short wavelength of 400 nm : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6395-6397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bilayered films composed of amorphous TbFeCo alloy and Al layers were deposited successively on glass slide substrates without plasma exposure using the facing targets sputtering system. The specimen films with the magneto-optical (MO) layer thickness tMO of 14 nm have a Kerr rotation angle θK and figure of merit fM as large as about 0.36° and 0.25, respectively, at the wavelength λ as short as about 400 nm. These values of θK and fM are considerably larger than those of the bilayered films with larger tMO in the conventional MO media. Normally, the bilayered films with tMO above 50 nm have θK of about 0.25° and fM below 0.2 at λ of 400 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349954
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of diethylarsine as a replacement for arsine in organometallic vapor-phase epitaxy of GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3750-3752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of GaAs has been performed with diethylarsine (DEAs) to investigate its potential as a replacement of arsine. Triethylgallium (TEG) and trimethylgallium (TMG) were used as group-III sources and carbon incorporation into the epilayers was compared. The growths were carried out under low-pressure conditions (130 Pa–1.3 kPa) to avoid a gas-phase reaction between the precursors. All epilayers exhibited p-type conductivity, and the main acceptor impurity was carbon. The lowest hole concentrations were ∼1016 and ∼1017 cm−3 for TEG and TMG, respectively. The dependence of hole concentration on V/III ratio suggests that the carbon incorporation comes mainly from TMG and DEAs for the TMG/DEAs mixture, and from DEAs for the TEG/DEAs mixture. These results indicated that the contribution of the H atom from the As—H bond in DEAs on reduction of carbon incorporation was not enough to grow high-purity GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346292
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  • 8
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of transparent plastic material (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3912-3913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measured values of the Verdet constant of transparent plastic fiber materials such as the poly-α-methylstyrene and polystyrene are comparable to that of a NaCl crystal. In these magneto-optical plastics, the wavelength giving the maximum value of the figure of merit for a fiber-type optical isolator is about 500 nm. They are also used for constructing plastic fiber sensors for higher magnetic field or higher current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344013
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  • 9
    Electronic Resource
    Electronic Resource
    Simple technique for the evaluation of the finish of an edge using interference phenomena in a shadow region (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 291-293 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper proposes the simple technique for evaluating a straight edge using the interference phenomena in the shadow region of various sample edges. Evaluation is easier and more effective in the shadow region than in the bright region because of the higher sensitivity of an edge to a shadow's diffraction pattern. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146583
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  • 10
    Electronic Resource
    Electronic Resource
    Light-induced self-written three-dimensional optical waveguide (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1079-1081 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-dimensional (3D) optical waveguides were fabricated in a photopolymerizing resin mixture solution by using a multimode optical fiber, without any moving parts. The core portion has formed by the selective photopolymerization of a higher refractive index monomer by Ar+ laser irradiation through the optical fiber. A continuous, straight waveguide was grown by the self-trapping of a guided laser beam. We demonstrated automatic 3D optical circuit formation that enables regrowth after passing through thick transparent glass plates. This growth mechanism also enables automation of the optical interconnection and packaging process, and could potentially contribute to future expansion of optical fiber communications networks. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389516
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