ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have observed the oscillations of specular beam intensity of reflection high-energy electron diffraction (RHEED) during Si molecular beam epitaxy on Si (001) 2×1 surfaces. The oscillation modes were measured as a function of incident beam direction, substrate temperature, or especially, dc current direction for resistive heating of the substrate. For the first time in [110] incident beam direction and at a substrate temperature above 450 °C, the phase of specular beam oscillations with the biatomic-layer growth mode can be chosen by the direction of the heating current.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102198
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