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  • American Institute of Physics (AIP)  (11)
  • 1
    Electronic Resource
    Electronic Resource
    Studies of InSb metal-oxide-semiconductor structure fabricated by photochemical vapor deposition using Si2H6 and N2O (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2335-2338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxide films (SiOx,0〈x〈2) have been prepared by photolysis of disilane (Si2H6) with nitrous oxide (N2O) at temperature below 200 °C using 2537-A ultraviolet light. Ellipsometric studies prove that the refractive index and etching rate of the photo-oxide films depend on the substrate temperatures and gas ratio. Composition and electrical properties of the interface (SiOx/InSb) are discussed by using Auger electron spectroscopy and metal-oxide-semiconductor capacitors. Hysteresis-free capacitance-voltage characteristics measured at 77 K are attained and the minimum interface state density is only 1.5×1011 cm−2 eV−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348967
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of substrate temperature on the properties of SiO2/InP structure prepared by photochemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3350-3353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The InP metal-oxide-semiconductor structure using SiO2 film as an insulator was deposited by mercury-sensitized photoinduced chemical vapor deposition ultilizing a gaseous mixture of silane (SiH4 ) and nitrous oxide (N2 O) under 253.7-nm ultraviolet light irradiation. The structural and electrical properties of the deposited film were then evaluated with emphasis on the substrate temperature dependence. An increase of the substrate temperature (Tsub ) has effects of increasing the refractive index and decreasing the etching rate, oxide charge density, and interface state density. Postoxidation annealing in a N2 environment at 300 °C decreases the interface states as well as the oxide charge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345372
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  • 3
    Electronic Resource
    Electronic Resource
    Enhancement of metal–semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6501-6505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study presents a method for surface passivation using silicon dioxide (SiO2). The proposed method has shown great effectiveness on metal–semiconductor barrier height enhancement. A high quality SiO2 layer is developed via liquid phase deposition, a method which naturally leaves a doping-level fluorine residue in the SiO2. The addition of fluorine to enhance the Schottky barrier height (SBH) is first discussed. Experimental results are presented. It is found that this fluorine addition enhances the Schottky barrier height, which allows a larger positive gate bias for enhancement mode metal–semiconductor field-effect transistors, thus permitting the fabrication of digital logic circuits with improved noise margins and relaxed tolerance with regard to device threshold voltage uniformity. The SBH to n-gallium arsenide (GaAS) is found to be approximately 0.7 eV. Finally, the effective barrier height of the metal–insulator–semiconductor structure reached 1.03 eV after annealing. The enhancement of SBH has been attributed to the formation of these stable interface layers. A model for fluorine-enhanced SiO2 SBH enhancement is also presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365057
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of a chemical modification on growth silicon dioxide films on gallium arsenide prepared by the liquid phase deposition method (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7151-7155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a chemical modification process to grow silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate using liquid phase deposition (LPD) at extremely low temperature (∼40 °C). In this process, pretreatment of the wafer by ammonia solution with buffer kept at pH=11–12 enriches OH radical formation on the GaAs surface, enhancing SiO2 deposition, providing good film quality, and reliability. The LPD SiO2 deposition rate on GaAs substrate is up to 1303 Å/h. The refractive index of the LPD SiO2 film on GaAs substrate is about 1.423 with growth at 40 °C. When the LPD SiO2 film on GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A mechanism for the deposition of silicon dioxide on a GaAs substrate is proposed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371805
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  • 5
    Electronic Resource
    Electronic Resource
    SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 μm operation fabricated using wafer bonding techniques (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1718-1720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 μm operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492868
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  • 6
    Electronic Resource
    Electronic Resource
    Shape evolution of Ge/Si(001) islands induced by strain-driven alloying (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3881-3883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The shape evolution of Ge/Si(001) islands grown by ultrahigh vacuum chemical vapor deposition were investigated by atomic force microscopy at different deposition rates. We find that, at low deposition rates, the evolution of islands follows the conventional pathway by which the islands form the pyramid islands, evolve into dome islands, and dislocate at a superdome shape with increasing coverage. While at a high deposition rate of 3 monolayers per minute, the dome islands evolve towards the pyramids by a reduction of the contact angle. The presence of the atomic intermixing between the Ge islands and Si substrate at high deposition rate is responsible for the reverse evolution. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379361
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 391-393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A constant amount of Ge was deposited on strained GexSi1−x layers of approximately the same thickness but with different alloy compositions, ranging from x=0.06 to x=0.19. From their atomic-force-microscopy images, we found that both the size and density of Ge islands increased with the Ge composition of the strained layer. By conservation of mass, this implies that these islands must incorporate material from the underlying strained layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126986
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  • 8
    Electronic Resource
    Electronic Resource
    Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2006-2008 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the temperature dependence (10–250 K) of the photoluminescence (PL) emission spectrum of self-organized Ge/Si(001) islands in a multilayer structure. With elevated temperature, we find that the thermally activated holes and electrons are gathered by the Ge islands in different ways. The holes drift from the wetting layer into the islands, while the electrons, confined in Si due to type-II band alignment, leak into the Ge islands by the electrostatic interaction with the holes accumulated there. It results in an increase of the integrated intensity of island-related PL at a certain temperature range and a reduction of the phonon energy in the phonon-assisted PL of the islands by involving a type-I transition into a type-II transition. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360783
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  • 9
    Electronic Resource
    Electronic Resource
    Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2852-2854 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge/Si multilayer structures with a bimodal distribution of the island spacing in the first layer have been investigated by atomic-force microscopy and transmission electron microscopy. Besides the vertical alignment, some oblique alignments of stacked islands are observed. The presence of the elastic interaction between islands is responsible for the oblique alignment of stacked islands. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322372
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  • 10
    Electronic Resource
    Electronic Resource
    Extremely low temperature formation of silicon dioxide on gallium arsenide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5788-5792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates the growth of silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate by use of the liquid phase deposition (LPD) method at extremely low temperature (∼40 °C). This method cannot only grow SiO2 but it can also obtain good quality and reliability due to the suppression of interdiffusion in such a low temperature process. The deposition rate of LPD-SiO2 on GaAs is up to 1265 Å/h. The refractive index of the LPD-SiO2 film on GaAs is about 1.42 with growth at 40 °C. When the LPD-SiO2 film on the GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor with a device area of 0.3 cm2, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A proposed mechanism for the LPD of SiO2 on GaAs is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366445
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