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  • 1
    Electronic Resource
    Electronic Resource
    Selective deposition of in situ doped polycrystalline silicon by rapid thermal processing chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2408-2410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective polycrystalline silicon was successfully deposited and in situ doped wih arsenic for the first time by rapid thermal processing chemical vapor deposition (RTPCVD). The growth kinetics of SiH2Cl2/AsH3/H2 gas system have been studied by examining the dependence of growth rate on deposition temperature, volume percentage of SiH2Cl2, and AsH3 mole fraction. Submicron polycrystalline silicon layers with excellent selectivity and precise thickness control have been achieved with proper deposition conditions. The growth rate decreases as doping levels increase, and drastically decreases when the AsH3 mole fraction is higher. In addition, the growth rate is linearly proportional to the SiH2Cl2 flow rate for a fixed AsH3 flow rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102029
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum confinement effects on low-dimensional electron mobility (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 426-430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of quantum confinement effects on the low-dimensional electron mobility in various AlGaAs/GaAs quantum well/wire structures has been performed. The influence of the electron envelop wave function and the subband structure on the low-dimensional electron scattering rates is evaluated. The electron transport behavior is studied through a Monte Carlo simulation. The result shows that the low-dimensional electron mobility varies significantly with the quantum well/wire geometry. The one-dimensional electron mobility of 9200 cm2/V s is obtained in a rectangular quantum wire with a geometry of 110 A(ring)×110 A(ring). This value is much improved in comparison with the bulk electron mobility of 8000 cm2/V s in intrinsic GaAs and the maximum two-dimensional electron mobility of 8600 cm2/V s in a 120 A(ring) GaAs quantum well. It is also noticed that the highest low-dimensional electron mobility is achieved in a quantum well/wire structure where the energy separation between the first subband and the second subband is about two polar optical phonon energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354127
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  • 3
    Electronic Resource
    Electronic Resource
    Performance of the 1 m Seya–Namioka monochromator beam line at SRRC : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1815-1817 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The performance of the 1 m Seya–Namioka monochromator (1 m-SNM) beam line at SRRC has been measured and reached the designed goal. The beam line throughput (photon flux) has been measured by a calibrated silicon photodiode and is close to the theoretical values. The resolving power of this beam line has been measured from the studies of the core absorption of Ar and Ne and the Rydberg states of Mg vapor gas, and has reached the theoretical values. The improvement of the cooling system of the first mirror is also described. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145792
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  • 4
    Electronic Resource
    Electronic Resource
    Current status of the 6 m low-energy spherical grating monochromator beamline at SRRC : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1658-1660 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The 6 m low-energy spherical grating monochromator (6 m-LSGM) beamline at SRRC is at its commission stage. The 6 m-LSGM beamline, which covers photon energies from 15 to 200 eV, is based on Dragon concept with spherical gratings and movable exit slit. Some of the commission data will be presented in this paper. The photoabsorption spectra of Ar, He, and Kr have been recorded with resolution so far unattained in the vacuum ultraviolet region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145874
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  • 5
    Electronic Resource
    Electronic Resource
    Defects in Ge+-preamorphized silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5399-5406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work studied the morphology and annealing behaviors of extended defects in Si subjected to various Ge+ preamorphization and BF2+ implantation conditions. The extended defects formed were near the specimen surface when Ge+ implantation energy and dose amount were low. During subsequent annealing, the end-of-range (EOR) loops were enlarged and then moved out of the specimen. High energy/low dose Ge+ implantation generated a damaged layer which initially transformed into a wide zone containing dislocation loops and rodlike defects in the annealed specimen. As the annealing proceeded, the width of defective zone gradually shrunk so that most of the extended defects could be annihilated by defect rejection/recombination process. In addition to the category II defects found in previous investigations, hairpin dislocations emerged in high energy/high dose Ge+-implanted specimens. In this specimen, rodlike defects and hairpin dislocations could be removed by annealing, while the EOR loops became relatively inert so that their removal would require high temperatures and/or long annealing times. Microwave plasma surface treatment was also carried out to form a nitride layer on specimen surface. Experimental results indicate that in addition to effectively reducing the size of EOR loops, surface nitridation might serve as a vacancy source injecting vacancies into Si to annihilate the interstitials bounded by dislocation loops. Reduction in the defect size was pronounced when bias voltage was added to the plasma process. However, radiation damage might occur with too high of a bias voltage. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371537
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  • 6
    Electronic Resource
    Electronic Resource
    Removal of end-of-range defects in Ge+-pre-amorphized Si by carbon ion implantation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3114-3119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon ion implantation was employed to annihilate the end-of-range (EOR) defects in Ge+-pre-amorphized Si. Experimental results showed that the efficiency of EOR defect removal depends on the Ge+-pre-amorphization conditions, the location of projected range (Rp) of carbon implant and subsequent annealing conditions. The best defect removal occurred when Rp of carbon implantation was brought close to the amorphous/crystalline (a/c) interface generated by Ge+-pre-amorphization. The higher the annealing temperature, the better the interstitial gettering efficiency of carbon atoms was observed. However, transmission electron microscopy investigation revealed the emergence of hairpin dislocations when dose and accelerating voltage of Ge+ implantation were high. In specimens without carbon implantation, the hairpin dislocations could be readily removed by a 900 °C, 30 min anneal. For carbon-implanted specimens, the density of hairpin dislocations increased when Rp of carbon implantation was close to the (a/c) interface. The glide motion of hairpin dislocations was affected by Ge+-pre-amorphization conditions and was inhibited by the SiC complexes formed in the vicinity of dislocations so that they became rather difficult to anneal out of the specimens. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369694
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  • 7
    Electronic Resource
    Electronic Resource
    Model-based predictors for improved automated beam generation and tuning of high current ion implanters : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 816-818 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Reliable and efficient beam generation and setup can provide significant cost-of-ownership advantages for modern high current ion implantation in the semiconductor industry. Automated tuning algorithms which make use of fundamental models to aid the decision-making process can be more effective at producing robust tuning solutions over the wide range of operating parameters typically called for in this industry. The ability to predict ion source, extraction, and beamline behavior over a range of energies from 0.2 to 160 keV, beam currents from 0.01 to 25 mA, using six or more ion species, over the full lifetime of the ion source, allows the full flexibility of the implant tool to be realized. Empirical and fundamental models which describe this behavior on a variety of Axcelis high current ion implant platforms are presented, and the ways in which these models may be used to improve overall implanter performance are demonstrated. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427352
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic rare-earth superlattices (invited) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3447-3452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic structures of several single-crystal, magnetic rare-earth superlattice systems grown by molecular-beam epitaxy are reviewed. In particular, the results of recent neutron diffraction investigations of long-range magnetic order in Gd-Y, Dy-Y, Gd-Dy, and Ho-Y periodic superlattices are presented. In the Gd-Y system, an antiphase domain structure develops for certain Y layer spacings, whereas modified helical moment configurations are found to occur in the other systems, some of which are commensurate with the chemical superlattice wavelength. References are made to theoretical interaction mechanisms recently proposed to account for the magnetic states of these novel materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340763
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  • 9
    Electronic Resource
    Electronic Resource
    Acoustic dimensional resonance tomography: Some examples in one-dimensional systems (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 55-58 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A spatial map of the variation of acoustic impedance within a material structure can be made using only its resonance frequencies. We demonstrate this for a 1-D rod having a diameter D which varies along its length l by determining D(l) from fundamental and overtone resonances. We also show how the technique can locate material/processing inhomogeneities in the elastic modulus and/or density on a scale of several parts per thousand for "stock'' rods of an aluminum alloy using nondestructive and noncontact testing. And finally, we apply dimensional resonance tomography in new measurement methods to obtain the thermal diffusivity along a rod and the heat transfer coefficient of the rod to its ambient. The latter technique provides quantitative data while allowing an arbitrary and unknown initial temperature distribution, requiring no temperature measurement or Fourier analysis, and can be done in noncontact fashion with the measurement of frequency and time, only.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336838
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  • 10
    Electronic Resource
    Electronic Resource
    Intense photoluminescence from laterally anodized porous Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3264-3266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied photoluminescence (PL) from porous Si anodized laterally along the length of the Si wafer. Broad PL peaks were observed with peak intensities at ∼640 to 720 nm. Strong PL intensity could be observed from 550 to 860 nm. Room-temperature peak intensities were within an order of magnitude of peak intensities of AlGaAs/GaAs multi-quantum wells taken at 4.2 K, and total intensities were comparable. A blue shift of peak intensities from ∼680 to 620 nm could be observed after thermal anneal at 500 °C in O2 and subsequent HF dip.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105752
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