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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence study of impurity states in aluminum antimonide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1478-1482 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized Czochralski-grown undoped AlSb single crystals by low-temperature photoluminescence and photoluminescence excitation spectroscopy. An excitonic band-gap energy Egx =1.667±0.001 eV of AlSb was determined. In all samples we detect a dominant donor and acceptor. The donor binding energy ED =151±3 meV and acceptor binding energy EA =37±3 meV are deduced from donor-acceptor pair luminescence and the excited states of the acceptor from selective pair excitation. We tentatively identify the donor as sulfur and the acceptor as carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345655
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction of hydrogen and deuterium with copper in GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2914-2916 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated hydrogen and deuterium passivation of two copper-related deep levels at EV+0.13 eV and EV+0.40 eV in GaAs with deep level transient spectroscopy (DLTS). The DLTS signals of the two copper-related acceptor levels disappear after exposing the samples to a remote hydrogen or deuterium plasma at 300 °C for 1/2 h. Both copper-related levels can be reactivated by thermal annealing. The copper-related donor–accepter pair luminescence at 1.36 eV is correlated with the DLTS signal of the copper-related acceptor level at EV+0.13 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108020
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