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  • 1
    Electronic Resource
    Electronic Resource
    Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2024-2026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy (MOVPE) are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8×1019 cm−3, but the hole concentration was as low as 1.3×1017 cm−3 at room temperature. The DLTS spectrum has a dominant peak D1 with activation energy of 0.41±0.05 eV, accompanied by two additional peaks with activation energies of 0.49±0.09 eV(D2) and 0.59±0.05 eV(D3). It was found that the dominant peak D1 consists of five peaks, each of which has different activation energy and capture cross section. A relevant model for these levels is presented in relation to the Mg–N–H complexes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122356
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 857-859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A characteristic infrared luminescence band, dominated by a zero-phonon line at 1.30 eV has been consistently detected in gallium nitride (GaN) epitaxial layers. It is assigned to the intra-3d-shell transitions 4T1(G)→6A1(S) of omnipresent iron trace impurities, Fe3+Ga(3d5). Another infrared emission is often also observed at 1.19 eV. This is tentatively assigned to chromium trace impurities, Cr4+Ga(3d2). The role of iron and chromium as minority-carrier lifetime killers in GaN-based optoelectronic devices is suggested from these data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111003
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of deep levels in n-type GaN by transient capacitance methods (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 304-309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient capacitance methods were used to analyze traps occurring in unintentionally doped n-type GaN grown by hydride vapor-phase epitaxy. Studies by deep-level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy indicated the presence of three majority-carrier traps occurring at discrete energies below the conduction band with activation energies (eV) ΔE1=0.264±0.01, ΔE2=0.580±0.017, and ΔE3=0.665±0.017. The single-crystal films of GaN were grown on GaN formed by metal-organic chemical-vapor deposition and on sputter-deposited ZnO; a similar deep-level structure was found in both types of samples. Pulse-width modulation tests using DLTS to determine the capture rates of the traps showed that the capture process is nonexponential, perhaps due to the high trap concentration. The origins of the deep levels are discussed in light of secondary-ion-mass-spectroscopy analysis and group theory results in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357144
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  • 4
    Electronic Resource
    Electronic Resource
    Field effect on thermal emission from the 0.40 eV electron level in InGaP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 771-774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole–Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission rate from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353336
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  • 5
    Electronic Resource
    Electronic Resource
    Deep center scattering potential in InGaP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7410-7414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mobility limited by the scattering of a phosphorous vacancy-induced deep center in In0.5Ga0.5P alloy grown by liquid-phase epitaxy on a (100) GaAs substrate has been investigated by means of Hall mobility and deep-level transient spectroscopy measurements. Two kinds of scattering potentials, Gaussian well type and square-well type, were considered. It was found that the scattering potential can be better described by the Gaussian-type potential than the square-well one. The mobility limited by deep center scattering has been fully calculated and analyzed. As a result, the mobility is characterized by a temperature dependence of T−1/2 in the temperature range from 77 to 400 K. The point defect scattering severely reduces the total mobility as its concentration increases. In addition, the scattering case when there is an electron trapped in the Gaussian potential well was also quantitatively investigated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358524
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  • 6
    Electronic Resource
    Electronic Resource
    Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1265-1266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results from spatially resolved photoluminescence and Raman experiments on the substrate interface region of wurtzite GaN layers. We show that the broad photoluminescence band with an intensity maximum at 2.4 eV is not an intrinsic property of GaN. We found that this photoluminescence band is strong only near the interface. Our investigations reveal that both the substrate interface and a region of structural reorientation of the layer near the interface act as a source of the photoluminescence. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115947
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  • 7
    Electronic Resource
    Electronic Resource
    Deep levels in the upper band-gap region of lightly Mg-doped GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1362-1364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in undoped and weakly Mg-doped n-type GaN films fabricated by metalorganic chemical vapor deposition were examined with deep level transient spectroscopy. Deep levels measured at 0.26 and 0.62 eV below the conduction band were found in relatively low concentrations of ∼2×1013 cm−3 in undoped GaN. Addition of small quantities of the Mg acceptor species by means of bis-cyclopentadienyl magnesium (Cp2Mg) during growth corresponded to a significant increase in the concentration of the level at 0.62 eV. The concentration of the shallower level, found to be independent of the Cp2Mg addition, remained unchanged. These deep levels may detrimentally affect optical and electrical properties when fabricating p-type GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116080
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of residual transition metal impurities in GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1140-1142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large number of epitaxial GaN samples as well as AlN ceramics have been studied by photoluminescence (PL) and PL excitation spectroscopy. In addition to the PL of residual iron, two new bands with zero-phonon-lines at 0.931 and 1.193 eV have been observed frequently in GaN. An analysis of the PL bands indicates that they arise from internal transitions within the 3d shell of residual vanadium and chromium impurities. The chromium PL has also been observed in polycrystalline AlN ceramics. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114987
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  • 9
    Electronic Resource
    Electronic Resource
    Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2676-2678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Schottky barrier on unintentionally doped n-type GaN grown by hydride vapor phase epitaxy was obtained and characterized. Using vacuum evaporated gold as the Schottky barrier contact and aluminum for the ohmic contact, good quality diodes were obtained. The forward current ideality factor was n∼1.03 and the reverse bias leak current below 1×10−10 A at a reverse bias of −10 V. The barrier height φBn was determined to be 0.844 and 0.94 eV by current-voltage and capacitance measurements, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110417
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  • 10
    Electronic Resource
    Electronic Resource
    Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2688-2690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In hydride vapor phase epitaxial (HVPE) growth of GaN, the sputtered ZnO layer has been found to be one of the best buffer layers because of the fact that physical properties of ZnO are nearly analogous with those of GaN. With a ZnO buffer layer, the reproducibility of growing GaN single crystal by HVPE has been greatly improved. The GaN films grown by this method show excellent crystalline, electrical, and optical properties. In particular, the Hall mobility of 1920 cm2 V−1 s−1 at 120 K is the highest value that has ever been reported by HVPE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108110
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