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  • 1
    Electronic Resource
    Electronic Resource
    Dielectric properties of new stable ferroelectric liquid crystals with large spontaneous polarization (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 3648-3654 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: New series of ferroelectric liquid crystals with two chiral carbons or bulky molecular components at the chiral carbon are synthesized and are found to possess extremely large spontaneous polarization exceeding 2×10−7 C/cm2 and a dielectric constant larger than 7000. These compounds are stable and exhibit a novel dielectric behavior due to the large spontaneous polarization and strong interaction with surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452750
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  • 2
    Electronic Resource
    Electronic Resource
    Multipartite generalization of the Schmidt decomposition (2000)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 41 (2000), S. 7932-7939 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: We find a canonical form for pure states of a general multipartite system, in which the constraints on the coordinates (with respect to a factorizable orthonormal basis) are simply that certain ones vanish and certain others are real. For identical particles they are invariant under permutations of the particles. As an application, we find the dimension of the generic local equivalence class. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319516
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  • 3
    Electronic Resource
    Electronic Resource
    Group quantization of parametrized systems. II. Pasting Hilbert spaces (1995)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 36 (1995), S. 4639-4666 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The method of group quantization described in the preceding paper [J. Math. Phys. 36, 4612 (1995)] is extended so that it becomes applicable to some parametrized systems that do not admit a global transversal surface. A simple completely solvable toy model is studied that admits a pair of maximal transversal surfaces intersecting all orbits. The corresponding two quantum mechanics are constructed. The similarity of the canonical group actions in the classical phase spaces on the one hand and in the quantum Hilbert spaces on the other hand suggests how the two Hilbert spaces are to be pasted together. The resulting quantum theory is checked to be equivalent to that constructed directly by means of Dirac's operator constraint method. The complete system of partial Hamiltonians for any of the two transversal surfaces is chosen and the quantum Schrödinger or Heisenberg pictures of time evolution are constructed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.530912
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristics of a thermal gas flowmeter (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 477-479 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The characteristics of a thermo tube type thermal gas flowmeter were analyzed and experimental results were described. The output of this flowmeter is temperature difference between two points along an electrically heated capillary. An analytical expression of its outputs was derived assuming a simple flow condition. An experimental prototype was constructed. The temperature distribution was measured and the outputs were obtained for three kinds of gases: nitrogen, carbon dioxide, and argon. Those outputs were compared with theoretical ones, and those agree well in the case of small flow rate. The relationship among temperature difference, mass flow rate, and specific heat of gas was discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139864
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  • 5
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of epitaxial Si on insulating substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 586-588 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work the role of extended defects on the electrical performance of epitaxial silicon on substrates containing an insulating SiO2 layer has been examined. The buried SiO2 layers in the substrates were obtained by two techniques: implantation of oxygen and zone melt recrystallization. In order to make a thorough structural and electrical evaluation of silicon on the insulator substrates, 5-μm-thick epitaxial capping layers have been simultaneously deposited via chemical vapor deposition on representative insulating substrates and reference wafers. The average minority-carrier lifetime was found to vary from 2.5 to 242 μs depending on the density and distribution of dislocations emerging from the capping epitaxial layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101841
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  • 6
    Electronic Resource
    Electronic Resource
    Micrograin structure influence on electrical characteristics of sputtered indium tin oxide films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6710-6713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between micrograin structures and electrical characteristics of sputtered indium tin oxide (ITO) films was investigated. Micrograin structures were observed by a high resolution scanning electron microscope. Electrical characteristics were evaluated by four point probe resistance measurement and Hall effect measurement. Low resistivity ITO films had domain structures. One domain consisted of many sputter grains having the same orientation. The resistivity decreased with increasing domain size. The domain boundary might cause scattering for conduction electrons. Therefore, larger domain ITO films had a higher Hall mobility. The minimum resistivity was 1.8×10−4 Ω cm, deposited at a sputtering voltage of −250 V and a 250 °C deposition temperature. The electron conduction mechanism in domain structured ITO films was taken into consideration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355093
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  • 7
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetime of magnetic field applied Czochralski silicon wafers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1850-1852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of minority-carrier lifetimes and diffusion length on starting silicon materials grown by the magnetic field applied Czochralski (MCZ), conventional Czochralski(CZ), and float-zone (FZ) methods has been investigated with a capacitance-time relaxation technique. MCZ silicon yields longer minority-carrier lifetimes and diffusion length than those of both CZ and FZ silicon materials. The generation lifetime of MCZ silicon increases, while the recombination lifetime decreases, with the initial oxygen concentration. These characteristics are correlated with grown-in defects and gettering by oxygen-related defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100374
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  • 8
    Electronic Resource
    Electronic Resource
    Threshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1820-1824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate threshold currents (Ith's) of 1.55 μm InGaAs/InGaAsP multiple quantum well (MQW) distributed feedback (DFB) laser diodes (LDs) experimentally and theoretically. The measured Ith of the 1.55 μm MQW LD with barriers whose band gap energy corresponds to 1.3 μm (λg=1.3 μm) is 10 mA, which nearly agrees with the calculated value of 8.5 mA. However, the measured Ith of the 1.55 μm MQW LD with barriers (λg=1.15 μm) is 19 mA, which is much larger than the calculated value. We explain this discrepancy by a nonuniform distribution of injected holes among the wells. The separation, ΔEv1, between the first quantized level of hole for the well valence band and the top energy for the barrier valence band prevents a uniform distribution of holes among the wells. The re-evaluated Ith, taking into account ΔEv1, is 18.8 mA which agrees well with the measured one. We also show that 1.55 μm p-type doped MQW DFB LD with barrier (λg=1.15 μm) is 5.4 mA, which is comparable to Ith's of 1.55 μm strained MQW DFB LDs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368339
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  • 9
    Electronic Resource
    Electronic Resource
    Optical transitions and frequency upconversion emission of Er3+ ions in Ga2S3–GeS2–La2S3 glasses (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 19-27 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic properties of Er3+ in Ga2S3–GeS2–La2S3 glasses are investigated on the basis of the spontaneous emission probabilities calculated by the use of the Judd–Ofelt theory and lifetime data. Frequency upconversion spectra are also measured with excitation at 800 and 980 nm. The spontaneous emission probabilities are much larger than those of the other glass systems such as oxides and fluorides. This is mainly attributed to the large refractive indices of the sulfide glasses. The quantum efficiencies of 4I11/2 and 4F9/2 levels are comparable or larger than the typical values of Er3+ in a fluoride glass. This is a consequence of the large spontaneous emission probabilities and low phonon energies of the sulfide glasses. However, the quantum efficiency of the 4S3/2 level is less than one-half of the value in the fluoride glass. The nonradiative transition probability of the 4S3/2 level is much larger than the value which is evaluated from the multiphonon relaxation theory. This suggests the presence of the other nonradiative relaxation process in addition to the multiphonon relaxation. This process is considered to be the energy transfer from the excited Er3+ to the band-gap excitation of the matrix glass. In upconversion spectra, the 497 nm emission from the 4F7/2 level is observed in addition to the red (665 nm) and the green (533 and 552 nm) emission bands. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366696
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  • 10
    Electronic Resource
    Electronic Resource
    Novel amino acid crystals for phase-matched second-harmonic generation: L-pyrrolidone-2-carboxylic acid (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 709-717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel nonlinear optical amino acid derivative, L-pyrrolidone-2-carboxylic acid (L-PCA), has been studied for the application of UV generation by frequency upconversion of laser radiation. L-PCA is relatively easy to grow from solution to a large size, typically ∼40×20×20 mm3, by a slow cooling method. This crystal is chemically stable because the crystal lattice is composed of a network of hydrogen-bonded molecules. L-PCA has a wide transparency extending to the UV region (the cutoff wavelength is 260 nm) and is therefore a good candidate for the second-harmonic generation (SHG) of Nd:YAG laser radiation (1064 nm). The nonlinear-optical coefficient d14 was measured to be 0.22 pm/V, and the measured phase-matching angles agreed with values calculated using refractive index data. The effective nonlinear optical coefficient deff of the type-I phase-matched SHG has also been measured to be 0.20 pm/V. UV generation down to 266 nm was achieved by phase-matched SHG in L-PCA crystals. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360330
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