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Compositional variation and ordering of GaxIn1−xP on GaAs structured substrates (1992)

Buchan, N. ; Jakubowicz, A. ; Broom, R. F. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 61 (1992), S. 2996-2998

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Nominally lattice-matched GaxIn1−xP grown on near-(001) GaAs substrates containing etched trenches oriented in the [1¯10] and [110] directions have been analyzed by scanning electron microscopy, energy dispersive x-ray spectrometry, transmission electron microscopy, and cathodoluminescence. The trench walls exhibit a high deposition rate and Ga content, accentuated on walls that are oriented toward {111}A planes. Walls oriented toward {111}B lead to selective atomic ordering on (1¯11) or (11¯1) planes, whereas walls oriented toward {111}A exhibit disorder. We discuss the combined effect of composition and ordering on the band gap.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108014

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