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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2391-2402 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an apparatus designed to quantitatively measure friction dynamics at the mesoscopic scale. This lateral force apparatus, LFA, uses double parallel leaf springs in leaf-spring units as force transducers and two focus error detection optical heads, optical heads, to measure deflections. The design of the leaf-spring units is new. Normal spring constants are in the range of 20–4000 N/m, and lateral spring constants are 7–1000 N/m. The optical heads combine a 10 nm sensitivity with a useful range of about 100 μm. The proven range of normal forces is 400 nN–150 mN. The leaf-spring units transduce friction and normal forces independently. Absolute values of normal and friction forces are calibrated. Typical errors are less than 10%. The calibration is partly in situ, for the sensitivity of the optical heads, and partly ex situ for the normal and lateral spring constants of the leaf-spring units. There is minimal coupling between the deflection measurements in the lateral and normal directions. This coupling is also calibrated in situ. It is typically 1% and can be as low as 0.25%. This means that the displacements of the tip can be measured accurately in the sliding direction and normal to the surface. Together, these characteristics make the LFA, well suited for quantitative study of friction dynamics at mesoscopic scales. Furthermore the design of the leaf-spring unit allows exchange of tips which may be fabricated (e.g., etched) from wire material (d(approximate)0.4 mm) and can have customized shapes, e.g., polished flat squares. The ability of the LFA to study friction dynamics is briefly illustrated by results of stick-slip measurements on soft polymer surfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3085-3088 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the lateral photoeffect to image the variations in the conductivity of a two-dimensional electron gas (2DEG) setup in a GaAs/AlGaAs heterostructure. A description of the experimental arrangement is given and a simplified theory of the image contrast is presented. Our experiments image contrast resulting from defects such as cracks in the GaAs sublayer, and other contrast resulting from local changes in resistance of the 2DEG. Such variations have important consequences concerning both the interpretation of average parameters measured on such 2DEGs and the performance of electronic devices ( such as high electron mobility transistors ) fabricated using them. The inhomogeneities no doubt have their origin either in defects in the substrate used, or in the growth of the layers, or both.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Layered structures of cubic yttria-stabilized zirconia (YSZ) sandwiched between two layers of platinum/YSZ composites with the platinum concentration varying between 20 and 55 vol % were prepared. Large double-layer capacitances were obtained due to the presence of large three-dimensional electrode surface areas in the composite layers. The layers were subjected to image analysis obtained from scanning electron microscopy micrographs. The specific surface area of the platinum particles decreased from ∼17×103 to ∼13.5×103 cm2/cm3 with increasing Pt concentration. Image analyses obtained with an in-lens detector revealed that the effective surface area of the Pt particles that were part of a conducting percolative network increased with Pt concentration to ca. 11×103 cm2/cm3 at a Pt metal volume fraction of 0.50. Impedance spectroscopy measurements performed at 550 °C demonstrated that the capacitance increased with increasing Pt concentration in the composite layer and optimal values as high as 4.3±1.3 kF/m2 at 50 vol % Pt were recorded. The specific electrode surface area calculated from this data was in good agreement with the data obtained from image analysis. © 2001 American Institute of Physics.
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the two-dimensional electron gas (2DEG) of GaAs/AlGaAs heterostructures, we observe a new type of oscillation in the current at electric fields above 0.8 kV/cm. These oscillations have two characteristic frequencies, around 200 MHz and 2.5 GHz. We show that these oscillations arise from properties of the 2DEG and depend on both electric field and magnetic fields. They disappear abruptly when magnetic fields above 0.5 T are applied.
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed current-voltage measurements on modulation-doped GaAs/AlxGa1−xAs heterostructures are presented at electric fields up to 2 kV/cm. At fields between 0.5 and 2.0 kV/cm we observe up to three well-defined avalanche type current jumps as a function of time. These current jumps show hysteresis effects as a function of the electric field. At even higher electric fields the current becomes irregular and we observe chaotic behavior. To explain the current instabilities we assume that at high electric fields electrons are injected into the AlxGa1−xAs layer parallel to the two-dimensional electron gas. The injected electrons subsequently cause avalanche ionization of occupied DX centers in the AlxGa1−xAs layer. Due to this process, a current filament is created with an exceptionally high mobility which is about 2×104 cm2/V s at 10 K.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 504-507 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: C doping in InGaAlAs lattice matched to InP with a p-type carrier concentration as high as 3×1019 cm−3 was demonstrated using trimethylarsenic (C source) and a superalloy approach (16 A(ring) Al0.1Ga0.9As/17 A(ring) InAs). A superalloy approach was necessary to permit C incorporation since the carbon doping was accomplished during the growth of Al0.1Ga0.9As. The carbon concentration was verified by both Hall-effect and secondary-ion-mass-spectrometry measurements. Hydrogen passivation was significant in as-grown samples but the hydrogen concentration decreased after the sample was annealed in a He atmosphere without the presence of hydrogen or arsine. The oxygen concentration in the superalloy needs to be further reduced in order for the superalloy to be effective as a base layer in a heterojunction bipolar transistor. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1763-1765 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electro-optic effect of GaAs is applied to profile the voltage distribution of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In our setup we reached a voltage sensitivity of 2 mV. We used this technique to characterize the local resistivity of the 2DEG. The results are consistent with those obtained from scanning electron microscopy voltage contrast measurements.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3330-3335 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We developed a time-resolved optical beam induced current (TROBIC) technique, and performed time-resolved current imaging experiments on GaAs/AlxGa1−xAs heterostructures under high electric field conditions. These experiments are the first time-resolved imaging experiments of current patterns in a two-dimensional semiconductor structure. We attribute the current patterns observed in the TROBIC images to the formation of current filaments in the AlxGa1−xAs layer, parallel to the two-dimensional electron gas (2DEG). We show that even in samples where the two-dimensional electron gas and the contacts to the 2DEG are perfectly ohmic and homogeneous, current filaments can still develop in high electric fields. These temporal and spatial instabilities in the AlxGa1−xAs layer strongly affect the high-field transport properties of the heterostructure.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2355-2360 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) and reflectance have been applied to characterize undoped and modulation-doped heterostructures of AlGaAs/GaAs grown by metal-organic chemical vapor deposition. The PR spectra were taken on these samples after sequential etching steps in a phosphoric acid etch to study the effects of the surface electric field, the heterointerface, and the two-dimensional electron gas. PR spectra were also taken with an external electric field applied through a transparent gate electrode. The results show that the oscillations appearing near the bandgap energy of GaAs are Franz–Keldysh oscillations originating from the large surface electric field. The surface electric field of the heterostructures can be modified through the application of an external electric field or by etching. The oscillation period is observed to increase with increasing reverse bias or with etching of the GaAs cap layer and the PR features disappear at a forward bias of 0.45 V. The very sharp features associated with the GaAs bandgap energy after etching have also been verified to be Franz–Keldysh oscillations and the presence of a two-dimensional electron gas cannot be confirmed with PR.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 511-513 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped GaAs films have been grown by solid-source molecular beam epitaxy using a graphite filament. The films were doped from 1×1015 cm−3 to 5×1019 cm−3 and the resulting mobilities are equivalent to beryllium-doped films. A slight dependence of As4/Ga flux ratio on carbon doping was observed. The use of either As2 or As4 did not significantly affect the carbon doping concentrations. Lattice contractions were observed for films doped heavily with carbon or beryllium. For a given doping concentration the contraction is more significant for carbon doping which is consistent with the smaller tetrahedral covalent radius of carbon compared to beryllium. Good agreement between observed and calculated lattice contractions with carbon doping is obtained. Annealing studies on a film doped with carbon at 5×1019 cm−3 indicate that the electrical properties and lattice contraction are quite stable.
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