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  • 1
    Electronic Resource
    Electronic Resource
    Optical and electron spin resonance spectroscopy of Ti3+ and Ti4+ in Al2O3 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1111-1117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absorption spectrum of Ti3+:Al2O3 crystals grown in a reducing atmosphere consists of the main blue-green absorption band and a weak infrared band. This infrared absorption decreases in intensity on annealing the as-grown samples in a reducing atmosphere. The analysis of electron spin resonance spectra of the as-grown samples, in which the infrared absorption band is observed, indicates that the center associated with the band is a cluster involving Ti3+ and Ti4+ ions with a neighboring, charge compensating Al3+ vacancy. The coexistence of a Ti4+ ion and an Al3+ vacancy in the neighborhood of the Ti3+ ion weakens the crystal field at this ion more than a single Ti4+ ion, giving rise to a red shift of the Ti3+ absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356494
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  • 2
    Electronic Resource
    Electronic Resource
    On the lack of influence of disorder in Cr3+-doped LiSr0.8Ca0.2AlF6 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2232-2234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical and electron spin resonance spectroscopies have been used to investigate the thermal stability of lasers based on Cr3+:LiSr0.8Ca0.2AlF6, a material in which the onset of critically inhibiting nonradiative decay at temperatures below 300 K might be expected based on results from other Cr3+-activated disordered gain media. The influence of disorder on the Cr3+ environment is shown to be very small in LiSr0.8Ca0.2AlF6 so that the 4T2→4A2 fluorescence transition is not broadened relative to that in LiSrAlF6 and the onset of significant nonradiative decay is also held above room temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121330
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  • 3
    Electronic Resource
    Electronic Resource
    Spin-dependent pair generation at Si/SiO2 interfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1299-1301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report spin-dependent generation of electron-hole pairs at the Si/SiO2 interface detected via microwave-induced changes in the recombination current through a gate-controlled diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100450
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  • 4
    Electronic Resource
    Electronic Resource
    Spin-dependent recombination in irradiated Si/SiO2 device structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1161-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of spin-dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p-channel metal-oxide-silicon field-effect transistors and metal-oxide-silicon wafers. Electron spin resonance transitions on the Pb center increase the recombination current at the Si/SiO2 interface by 2–3 parts in 104. The results are interpreted using a model involving the recombination of electrons and holes at Pb centers with which they are spatially correlated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99192
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  • 5
    Electronic Resource
    Electronic Resource
    Novel laser gain media based on Cr3+-doped mixed borates RX3(BO3)4 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3906-3908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter discusses the optical properties of Cr3+ ions in mixed borate crystals with the formula RX3(BO3)4, where R3+=Y3+ or Gd3+ and X3+=Al3+ or Sc3+. Measurements of the optical absorption spectra have been used to estimate the crystal field strength Dq and the Racah parameters B and C. These quantities confirm that in YAl3(BO3)4(YAB) and GdAl3(BO3)4(GAB)Cr3+ ions occupy strong crystal field sites 2E)〈E(4T2)], whereas in YSc3(BO3)4(YSB) and GdSc3(BO3)4(GSB) the Cr3+ ions occupy weak field sites 4T2)〈E(2E)]. The consequence is that the fluorescence spectrum of Cr3+:YAB and GAB reveals the sharp R lines at low temperature and R lines plus broadband at 300 K. Both Cr3+:YSB and GSB emit into the broadband 4T2→4A2 transition at all temperatures. The potential of these materials as laser gain media is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115313
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  • 6
    Electronic Resource
    Electronic Resource
    Luminescence decay in disordered low-dimensional semiconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2672-2674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The luminescence decay of excitons in disordered low-dimensional semiconductors with quantum confinement is shown experimentally to be characterized by a nonexponential profile and an absence of spectral diffusion. We are able to describe this luminescence as a hopping-assisted recombination using the correlation function approach to nondispersive transport developed by H. Scher, M. F. Shlesinger, and J. T. Bendler [Phys. Today 41, 26 (1991)]. We suggest a simple derivation of analytical functions which accurately describe the anomalous luminescence decays of disordered II-VI superlattices and of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119, 352 (1863)] (stretched-exponential) relaxations as special cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106891
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  • 7
    Electronic Resource
    Electronic Resource
    Optical absorption of ZnSe-ZnS strained layer superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2142-2144 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the absorption spectra of excitons in ZnSe-ZnS strained layer superlattices (SLS) with well widths ranging from 0.6 to 7.6 nm is reported. The n=1 heavy hole (hh) and light hole (1h) exciton absorptions are clearly resolved for all samples even near room temperature. A theoretical estimation of the n=1 hh exciton peak energy, which takes account of strain, quantum confinement of free carriers, and exciton binding energy enhancement by reduced dimensionality, is in excellent agreement with the experimental results. The variations in absorption linewidth and energy shift between absorption and emission band peaks, as a function of quantum well width, have also been measured: the experimental results provide evidence that the origin of the so-called "Stokes' shift'' lies in Anderson localization due to monolayer fluctuations in the well width. The temperature dependence of the exciton peak energy and its linewidth are interpreted in terms of electron-phonon and exciton-phonon interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106106
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