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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 669-671 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of nanosecond pulsed excimer laser irradiation on the particle distribution and density of laser-deposited YBa2Cu3O7 thin films was investigated. High-TC YBa2Cu3O7 superconducting thin films with thicknesses varying from 800 to 2000 A(ring) were deposited on (100) LaAlO3 and (100) yttria stabilized zirconia substrates. The as-deposited films were characterized by a distribution of particles on the film's surface. The effect of controlled low energy density pulses (fluence, E=50–250 mJ/cm2, wavelength λ=248–308 nm, and pulse duration τ=20–45×10−9 s) on these films was investigated. A significant reduction of particles was observed in films after single pulse irradiation at fluences below 150 mJ/cm2. Multiple pulses did not have any further change on the surface morphology. The possible mechanisms for particle removal are also discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 952-954 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality lithium niobate thin films were deposited onto R-cut sapphire substrates (α-Al2O3) by the pulsed laser deposition method. To stabilize single phase LiNbO3, relatively high oxygen partial pressure was required. X-ray diffraction results of these films, fabricated at an oxygen pressure of 1 Torr, showed only (012) and (024) peaks from lithium niobate. The lowering of the oxygen partial pressure or addition of argon in the ambient gas resulted in formation of intermediary phases. The substrate temperature above 650 °C did not have a significant effect on the thin-film quality. Optical measurements on the films deposited under a wide variety of chamber pressures indicated an index of refraction of 2.28, corresponding to the ideal value of bulk LiNbO3.
    Type of Medium: Electronic Resource
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