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  • 1
    Electronic Resource
    Electronic Resource
    A high pressure Raman study of 9-hydroxyphenalenone and pressure-induced phase transitions (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 3587-3590 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The pressure effect on 9-hydroxyphenalenone (9-HPLN) has been investigated using Raman scattering and optical absorption techniques in a diamond anvil cell up to 70 kbar hydrostatic pressure. A pressure-induced first-order phase transition occurs near 6 kbar and the Raman data shows that the transition is to the same phase that is obtained on cooling 9-HPLN below 255 K at ambient pressure. The phase boundary has a positive slope with dT/dP=7 K/kbar. The Raman data indicate that there may be another phase change near 50 kbar. A strong and sharp Raman frequency near 12 cm−1 is observed in all the phases up to the highest pressure investigated. The weak pressure dependence of this frequency and its presence up to the highest pressure suggests that it may be a molecular mode rather than an external mode frequency. The optical absorption associated with π–π* excitation exhibits a large red shift, as expected of an aromatic molecular crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453004
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  • 2
    Electronic Resource
    Electronic Resource
    In situ-grown carbon nanotube array with excellent field emission characteristics (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3813-3815 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ catalytic thermal decomposition method was used for producing aligned multiwalled carbon nanotubes (MWNTs) in bulk quantities on stable and electrically conducting substrates. Very low turn-on electric fields of 0.75 V/μm and low threshold fields of ∼1.6 V/μm (for current density of 10 mA/cm2) were obtained from the MWNT arrays grown on TiN substrate. Furthermore, large emission current densities of 1–3 A/cm2 were obtained at reasonably low fields of less than ∼8 V/μm. These enhanced emission properties are tentatively attributed to the oriented and high-density nature of the emitting carbon nanotube structure and the high-conductivity, stable nature of the TiN substrate onto which the nanotubes are attached. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126790
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  • 3
    Electronic Resource
    Electronic Resource
    C60 thin film transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 121-123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: N-channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on-off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115503
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  • 4
    Electronic Resource
    Electronic Resource
    Reactivity of C60 in pure oxygen (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2956-2958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In pure oxygen at moderate temperatures of 200 °C, an fcc C60 transforms into amorphous carbon-oxygen compounds and the icosahedral C60 molecular structure is destroyed. The maximum oxygen uptake of pure C60, O/C60, is 12. Isothermal TGA transformation curves are sigmoid-shaped with the kinetic exponent n∼5/2 which conforms with a two-dimensional nucleation and growth mode. The heat of formation for the carbon-oxygen compounds is 90 kcal/mol O, and the formation energy for the reaction: 60C (graphite)→C60 molecule is estimated to be ∼600 kcal/mol.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105810
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  • 5
    Electronic Resource
    Electronic Resource
    Organic field-effect bipolar transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1108-1110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic field-effect transistors (FETs) which employ two carefully selected active materials can function as n channel, p channel, or both n- and p-channel devices. It is shown that under an appropriate set of bias conditions the channel current in FETs with α-hexathienylene (α-6T) and C60 active layers consist of electron and hole components that are injected from the source and drain contacts into the C60 and α-6T layers, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115728
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  • 6
    Electronic Resource
    Electronic Resource
    Deposition and characterization of fullerene films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2109-2111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal sublimation of pure C60 and C70 has been used for depositing well-characterized fullerene films on a variety of substrates. Film purity is determined by infrared absorption spectra and the extent of crystallinity of the face-centered cubic structure by x rays. Thickness-dependent optical and electrical measurements reveal uniform films over the thickness range 200–1000 A(ring). We obtain optical absorption coefficients having values between those of Si and Ge and a relative permittivity having a value close to that of amorphous SiO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106095
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