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  • 1
    Electronic Resource
    Electronic Resource
    Morphology of dynamic electron transfer characteristic of chemical reaction dynamics (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 6334-6343 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The morphology of the dynamic electron transfer characteristic of chemical reaction dynamics has been studied by introducing the new criterion of an isomorphism of the manifold of electron orbitals at the different points of the reaction coordinate. This criterion is a natural development of the famous Amos–Hall corresponding orbital. Natural orbitals are obtained from the dynamic Fock equation, then it is possible to describe the electronic process of a chemical reaction by the way that the occupation number of an electron orbital changes within the electron orbital manifold which is constructed to have isomorphic equivalency along the reaction coordinate. The electronic process accompanying the chemical reaction CH3+HF → CH4+F has been studied as a demonstration of the present theory. The electron orbital which is transformed by the new criterion is strongly localized, though the transformation operator itself does not contain any explicit localization terms, such as self-energy integrals. The transition of the occupation number inherent to the spatially clamped orbital is clearly demonstrated, and gives a new interpretation of the electronic process of the reaction mechanism. This has also been analyzed in the light of the dynamic electron transfer and dynamic spin transfer characteristic of a chemical reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449860
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  • 2
    Electronic Resource
    Electronic Resource
    Compositional study of ultrathin rapidly reoxidized nitrided oxides (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 629-635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin nitrided oxides (7.7 nm) were reoxidized for the first time by lamp-heated rapid thermal annealing in O2 at 900–1150 °C for 15–600 s. Compositions and residual hydrogen contents in various reoxidized nitrided oxides were studied by Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS), respectively. AES analyses show that as reoxidation proceeds, the nitrogen concentration peak near the outer surface decreases rapidly, while that near the Si-SiO2 interface [N]int decreases very slowly. It is newly found that the nitrogen-rich layer near the Si-SiO2 interface moves further into the substrate as reoxidation proceeds, following a movement similar to that of the Si-SiO2 interface. As the starting nitrogen content is lowered or the reoxidation temperature is raised, the distance of the peak movement ΔdAES and the reduction of [N]int are larger. The ΔdAES is found in quantitatively good agreement with the increase of film thickness evaluated by capacitance-voltage measurements. The movements are due to the diffusion-limited interfacial oxidation. In contrast to reoxidation, annealing in N2 of nitrided oxides scarcely reduces the [N]int and does not increase ΔdAES. SIMS analyses show that as reoxidation proceeds, hydrogen concentration [H] in the film decreases monotonically. As the starting nitrogen content is lowered or the reoxidation temperature is raised, [H] decreases more rapidly. Electron trapping was monitored by flat-band voltage shift ΔVFB under high-field stress, and ΔVFB is found to decrease with the reduction of [H] following a proportional relation regardless of the fabrication condition. [H] is also reduced by annealing in N2 and the reduction is comparable to that by reoxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343095
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  • 3
    Electronic Resource
    Electronic Resource
    Differences in quality of PF ring vacuum between positron and electron storage mode : International conference on synchrotron radiation instrumentation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1728-1731 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Electrons or positrons were stored in the electron storage ring of the Photon Factory (PF). The vacuum of the PF was so good that differences in the instantaneous beam lifetimes between electron and positron storage modes were very slight. Abnormal decrements of the stored beam current observed in the electron storage mode did not appear in the positron storage mode. Thus, the decay curves of the beam current in the positron storage mode were smoother than those in the electron storage mode. Though the instantaneous beam lifetime was nearly the same in storage modes, the practical beam lifetime of a positron was about 10% longer than that of an electron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140940
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  • 4
    Electronic Resource
    Electronic Resource
    Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5497-5503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement technique of the absolute concentration of hydrogen (H) atoms in methane (CH4) and/or hydrogen molecule (H2) plasmas has been established. The H-atom concentration was evaluated by vacuum ultraviolet absorption spectroscopy (VUVAS) using a high-pressure H2 microdischarge hollow cathode lamp (H2-MHCL) as the Lyman α (Lα 121.6 nm) light emission source. A measurement technique of the background absorption caused by species other than H atoms at the Lα line was developed by using the VUVAS technique with the MHCL employing nitrogen molecules (N2-MHCL). The lines around Lα used for the background absorption measurements are 2p23s 4P5/2–2p3 4S3/20 at 119.955 nm, 2p23s 4P3/2–2p3 4S3/20 at 120.022 nm, and 2p23s 4P1/2–2p3 4S3/20 at 120.071 nm of the N atom. By using the VUVAS technique with the MHCLs and subtracting the background absorption from the absorption of H atoms at Lα, we have achieved the measurement of the H-atom concentration in an inductively coupled plasma operated in CH4 and/or H2. The H-atom concentration increased from 2×1011 to 3×1012 cm−3 when increasing the CH4 flow rate ratios from 0% to 50% in the CH4–H2 mixture and was almost constant in its range between 50% and 100% at a pressure of 1.33 Pa, a radio frequency power of 200 W, and a total flow rate of 100 sccm. The behavior of the H-atom concentration was compared with that of the Balmer α emission intensity. The decay of the H-atom concentration in the H2 plasma afterglow was investigated to clarify the loss kinetics of H atoms. The dependence of the decay time constant on the pressure showed that H atoms were dominantly lost through diffusion to the wall surface. The diffusion constant of H atoms in H2 plasmas was determined to be 3.0×105 cm2 Pa s−1 at 400 K. The surface loss probability of H atoms on the stainless-steel and the hydrocarbon walls were estimated to be 0.15 and 0.07, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410327
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  • 5
    Electronic Resource
    Electronic Resource
    Behavior of hydrogen atoms in ultrahigh-frequency silane plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4727-4731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the behavior of the absolute density of hydrogen (H) atoms in ultrahigh-frequency (UHF), (500 MHz) silane (SiH4) plasma by using a vacuum ultraviolet absorption spectroscopy technique with a microdischarge hollow cathode lamp. In the UHF plasma using SiH4 highly diluted with hydrogen molecule (H2) at a pressure of 20 Pa, an UHF power of 1000 W, and a total flow rate of 200 sccm, the absolute density of H atoms slightly increased from 7.4×1011 to 7.9×1011 cm−3 with increasing the SiH4 flow rate ratios from 0% to 2.5% and then the H atom density decreased at the ratio of 5%. The decrease of the density is due to the increase of the reaction between the H atom and the SiH4 molecule. The behavior of the absolute density of H atoms was compared with that of the Balmer α(Hα) emission intensity. It was found that the behaviors of the absolute H atom density and the Hα emission intensity were quite different. Moreover, the kinetics of H atom density in SiH4 plasmas have been clarified on the basis of measured results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362414
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  • 6
    Electronic Resource
    Electronic Resource
    Dual-electrode biasing for controlling ion-to-adatom flux ratio during ion-assisted deposition of diamond (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4714-4718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-bias method using a grid mesh inserted into the front of a substrate has been employed to control the ion-to-adatom flux ratio in an inductively coupled plasma for depositing crystalline materials preferring low-energy ion bombardment. The Langmuir probe measurements revealed that the ion flux toward the substrate decreased with increasing a positive substrate bias with the grid grounded, while it increased with increasing a positive grid bias with the substrate grounded. Ion energy analyses along the diffusing plasma stream by using a probe and a mass spectrometer revealed the contribution of a high-energy tail in the ion-energy distribution into the bombarding ion flux. The ion-assisted deposition of diamond at a pressure of 10 mTorr was performed at a bombarding ion energy as low as the drifting energy (∼several eV). The results indicate the need for optimizing the ion-to-adatom flux ratio for efficient migration and clustering of precursor adatoms yielding a high nucleation density over 109 cm−2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359159
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1955-1961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin fluorinated silicon nitride (SiNx) films of 4 nm in thickness were formed on a Si substrate at 350 °C in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH3/SiF4) gases. Ultrathin fluorinated SiNx film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO2 of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (Dit=4×1011 cm−2) in the capacitance–voltage characteristics. The film structures and the surface reactions for the fluorinated SiNx film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiNx films was found to be a key factor in the formation of fluorinated SiNx films of high quality at low temperatures. Fluorinated SiNx is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1381556
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  • 8
    Electronic Resource
    Electronic Resource
    Spatial distribution of the absolute densities of CFx radicals in fluorocarbon plasmas determined from single-path infrared laser absorption and laser-induced fluorescence (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 580-586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial distribution of the absolute density of CFx (x=1–3) radicals and their translational temperatures in an electron cyclotron resonance (ECR) plasma generated from a tetrafluorocarbon (C4F8) gas were examined using infrared diode-laser absorption spectroscopy (IRLAS) without a multiple reflection cell, namely, single-path IRLAS. Furthermore, we have developed a method of measuring CF and CF2 radical densities using single-path IRLAS combined with laser-induced fluorescence (LIF) spectroscopy. This method enables us to measure the spatial distribution of absolute radical densities with high accuracy, because of the IRLAS infrared laser beam and the LIF ultraviolet laser beam having identical paths. Under all the conditions studied, a spatially hollow distribution of the CF2 radical density is formed; the CF2 radical density in the vicinity of the chamber wall is much higher than that in the plasma. However, the spatial distribution of the CF radical density differs greatly from that of the CF2 radical density. The translational temperatures of CF and CF2 radicals are evaluated to be ∼700 K. On the basis of the measured results, we clarify the mechanisms of the formation of the spatial distribution, and conclude that the hollow distribution of the CF2 radical density is not caused by radical generation from the chamber wall, rather, the dominant mechanism for the formation of this distribution is the electron-impact dissociation of C4F8 gas in the ECR region and diffusion from the upper part of the plasma chamber under the present plasma conditions where the flux of ions incident to the chamber wall is low. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337090
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  • 9
    Electronic Resource
    Electronic Resource
    Sub-5 nm gold dot formation using retarding-field single ion deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3223-3225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold dots of 2.5 nm mean diameter and 0.8 nm standard deviation have been fabricated successfully on chromium oxide (CrOx) thin films. The CrOx thin films were deposited on Si substrates by sputtering and gold dots were subsequently deposited by a retarding-field single ion deposition (RSID) technique. The formation of gold dots has been investigated systematically with landing energies from 100 to 900 eV and doses from 10 to 40 C/m2. The dot diameter and density could be controlled by varying the landing energy and dose of gold ions arriving on the surface. The formation of single electron devices, quantum dots, nanopillars, and other nanoscale device structures is proposed using the RSID technique. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122725
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic properties of Ni2In type (Co1–xMnx)65Ge35 compounds : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5238-5240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high temperature phase of (Co1–xMnx) 65Ge35 is found to be of the hexagonal Ni2In type in the range of 0≤x≤0.6. Co2Ge is Pauli paramagnetic, and ferromagnetism is induced with substitution of Mn for Co. Magnetization measurement and x-ray diffraction experiments for these compounds have been performed. The x dependences of the Curie temperature Tc and magnetization show a maximum near composition x=0.25. X-ray studies show that the lattice constants c are minimum at x=0.25. The x dependence of the relative intensities of x-ray lines suggests that the Mn and Co atoms at 2(a) sites in the compound x=0.25 align alternately in the c direction. The Co atoms at 2(d) site and the Ge atoms at 2(c) site shift along the c direction are found. The neutron diffraction experiment of x=0.25 also support such crystal structure. Maximum of Curie temperature and magnetization of compounds near x=0.25 are discussed with the ordering of Mn and Co atoms in the crystal lattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362439
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