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  • American Institute of Physics (AIP)  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1909-1911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Shubnikov–de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i=1). Very close mobilities of 5859 and 5827 cm2/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95×1012 cm−2 due to incomplete transfer of the electrons from the Si δ-doped layer to the well. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396625
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  • 2
    Electronic Resource
    Electronic Resource
    Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2548-2550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From the capacitance–voltage dependence of Pt/PbZr0.5Ti0.5O3/Pt capacitors, we mathematically separated the capacitance into two parts corresponding to two regions of the samples, the uniform electric-field region and the nonuniform region. They are correlated with the bulk ferroelectric film region and the Pt/PbZr0.5Ti0.5O3 Schottky barrier interface region, respectively. The calculations based on the in-series capacitor model show a slight decrease of dielectric permitivity for the fatigued bulk films. By assuming a much smaller dielectric permitivity of the interface region than that of bulk films, it was found that the interface capacitance decreased remarkably compared with that of the bulk ferroelectric film after fatigue. This decrease was attributed to the lowering of ferroelectricity in the interface layer, which suggests that the fatigue is mainly an interface state controlled process. The asymmetricity in the interface capacitance–voltage curve is attributed to the different defect concentration levels in the top and bottom interface regions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367301
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  • 3
    Electronic Resource
    Electronic Resource
    Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1375-1377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon–plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396818
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  • 4
    Electronic Resource
    Electronic Resource
    Subband electron properties of modulation-doped AlxGa1−xN/GaN heterostructures with different barrier thicknesses (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetotransport properties of modulation-doped Al0.22Ga0.78N/GaN heterostructures with different barrier thicknesses of 25–100 nm have been investigated in magnetic fields up to 9 T at 1.4 K. Fast Fourier transform has been applied to obtain the subband density and mobility of the two-dimensional electron gas in these heterostructures. High electron density of 1.18×1013 cm−2 and quantum mobility of ∼8200 cm2 V−1 s−1 are obtained when the barrier thickness is 75 nm, which indicates that there exists a critical barrier thickness between 50 and 100 nm in the modulation-doped Al0.22Ga0.78N/GaN heterostructures. We also find that the elastic strain relaxation of the barrier does not significantly enhance the quantum mobilities of the ground subbands, however, it has strong effect on the mobilities of the excited states. The experimental values obtained in this work are useful for the design and optimization AlxGa1−xN/GaN device. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1386620
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  • 5
    Electronic Resource
    Electronic Resource
    PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3476-3478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 (PZT/LSCO) heterostructures have been grown directly on (100)Si by chemical solution routes. Field-emission scanning electron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films grown on LSCO thin films showed no preferential orientation and excellent ferroelectricity. The remnant polarization Pr is about 22.8 μC/cm2 and the coercive field Ec is about 95 kV/cm at an applied electric field of 400 kV/cm. The ferroelectric capacitor has been fabricated and showed no polarization fatigue after 3×109 fatigue cycles. The Pt/PZT/LSCO capacitor is suitable for nonvolatile random access memory application. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419234
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  • 6
    Electronic Resource
    Electronic Resource
    Properties of highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures prepared by chemical solution routes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4172-4174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures have been grown on Si(100) using chemical solution routes. X-ray diffraction analysis shows that Ba0.9Sr0.1TiO3 thin films are high (100) orientation (α100=0.92). Atomic force microscopy investigation shows that they have large grains about 80–200 nm. A Pt/Ba0.9Sr0.1TiO3/LaNiO3 capacitor has been fabricated and showed excellent ferroelectricity, the remnant polarization and coercive field are 10.8 μC/cm2 and 96 kV/cm, respectively. The electric field dependence of capacitance measurement shows that the capacitor has large capacitance tuning ([Cmax−Cmin]/Cmax×100%) of 63%. The Ba0.9Sr0.1TiO3 thin films have high dielectric constant (cursive-epsilon) of 200 at 1 MHz. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1381416
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  • 7
    Electronic Resource
    Electronic Resource
    Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1250-1254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce the flatband magnetocapacitance measurement to study magnetotransport properties in bulk semiconductors. This method is better, in some cases, than the Hall measurement because it can avoid some problems inherent to the latter method, such as the influence of the surface conducting layer, the carrier mobility, and the sample geometry correction factor. By using this experimental method some interesting phenomena concerning magnetotransport properties in an n-type InSb sample were observed, including Shubnikov–de Haas oscillations, resonant defect states, conduction process transitions, and the metal–insulator phase transition. The experimentally determined magnetotransport properties for the InSb sample are compared with those reported in literature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363866
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical characterization of subbands in the HgCdTe surface layer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5000-5004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The subband dispersion relations have been computed as a function of the surface electron concentration in the accumulation layers of n-Hg1−xCdxTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubnikov-de Haas (SdH) oscillation measurements and quantitative mobility spectrum analysis (QMSA). The results show that the QMSA can provide accurate electric parameters for all kinds of carriers in the subband without considering the complex energy band in the semiconductors, while the SdH oscillation can only offer qualitative data because the analysis is based on parabolic energy band approximation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366369
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