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  • 1
    Electronic Resource
    Electronic Resource
    Electronic and shallow donor impurity states in GaAs-Ga1−xAlxAs quantum-well wires: Effects of dielectric mismatch (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7389-7393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of image potential due to dielectric mismatch on electronic and shallow donor impurity states in quasi-one-dimensional GaAs-Ga1−xAlxAs quantum-well wires with rectangular cross section for both finite barrier and infinitely high barrier are investigated. The results have shown that, when the image potential is included, the variations in electronic energy level and impurity binding energy are considerable, especially when the cross-section dimensions of the quantum wire become small. The results also showed that the effects of the impurity ion image potential on impurity binding energy are much larger than those of electron image potential.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356653
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Performance projections for ballistic carbon nanotube field-effect transistors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3192-3194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to ballistic MOSFETs, ballistic CNTFETs show similar I–V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in device performance. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1474604
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  • 3
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    Magnetism and magnetocrystalline anisotropy in single-layer PtSe2: Interplay between strain and vacancy (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-08
    Description: The electronic and magnetic properties of the newly synthesized single-layer (1 L) transition-metal dichalcogenide (TMD) PtSe 2 are studied by first-principles calculations. We find the strain or selenium vacancy (V Se ) alone cannot induce the magnetism. However, an interplay between strain and V Se leads to the magnetism due to the breaking of Pt-Pt metallic bonds. Different from the case of 1 L-MoS 2 with V S , the defective 1 L-PtSe 2 has the spatially extended spin density, which is responsible for the obtained long range ferromagnetic coupling. Moreover, the 1 L-PtSe 2 with V Se undergoes a spin reorientation transition from out-of-plane to in-plane magnetization, accompanying a maximum magnetocrystalline anisotropy energy of ∼9–10.6 meV/V Se . These results indicate the strain not only can effectively tune the magnetism but also can manipulate the magnetization direction of 1 L-TMDs.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
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    Dual-frequency glow discharges in atmospheric helium (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-10-23
    Description: In this paper, the dual-frequency (DF) glow discharges in atmospheric helium were experimented by electrical and optical measurements in terms of current voltage characteristics and optical emission intensity. It is shown that the waveforms of applied voltages or discharge currents are the results of low frequency (LF) waveforms added to high frequency (HF) waveforms. The HF mainly influences discharge currents, and the LF mainly influences applied voltages. The gas temperatures of DF discharges are mainly affected by HF power rather than LF power.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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