ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (5)
Collection
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    Ferromagnetic metal/semiconductor hybrid structures for magnetoelectronics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5369-5371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the following new ferromagnetic metal/semiconductor heterostructure material systems: (1) Fe/InAs(100)-4×2, (2) Fe/InAs(graded)/GaAs(100), and (3) Fe/InAs/AlSb/GaSb/AlSb/InAs/GaAs resonant tunneling diodes. Single crystal Fe films have been stabilized in these structures using molecular beam epitaxy growth, as evidenced by low energy electron diffraction. The magnetic and electrical properties have been studied using in situ (and focused) magneto-optical Kerr effect, alternating gradient field magnetometry, and current–voltage measurements. The results show that Fe/InAs based heterostructures are very promising systems for use in future magnetoelectronic devices as they have well defined magnetic properties as well as favorable electrical properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369980
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures (invited) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6740-6744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two major problems in spin electronics remain to be solved: room temperature spin injection at a source and spin detection at a drain electrode. The lateral size of magnetic contacts and the presence of a potential barrier at the interface are believed to have a key influence on the efficiency of both of these processes. We therefore aimed to clarify these issues by studying spin-polarized transport across epitaxially grown single crystal Fe (001)/GaAs nanoclusters and at the Schottky barrier formed at Ni80Fe20/GaAs interfaces. We observed a negative contribution to the magnetoresistance of an ultrathin (2.5 ML) discontinuous epitaxial Fe film as occurs in tunnel magnetoresistance. This result suggests that spin transport via GaAs is possible on the nanoscale. In the continuous NiFe/GaAs structures, circularly polarized light was used to create a population of spin-polarized electrons in the GaAs substrate and spin-polarized electron transport across the interface at room temperature was detected as an electrical response associated with the field-dependent photocurrent. Surprisingly, highly efficient spin transmission is observed at room temperature, indicating that there is no significant loss of spin polarization for electrons crossing the interface. This result unambiguously demonstrates that spin detection is possible at room temperature in a continuous ferromagnet/semiconductor contact in the presence of the Schottky barrier. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361045
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Giant enhancement of orbital moments and perpendicular anisotropy in epitaxial Fe/GaAs(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7156-7158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin and orbital magnetic moments and the perpendicular magnetic anisotropy of 8 and 33 monolayer epitaxial bcc Fe films grown on GaAs(100)-4×6 have been measured using x-ray magnetic circular dichronism and polar magneto-optical Kerr effect. Both the films have approximately the same spin moments of about 2.0μB close to that of the bulk value. The ultrathin film shows a giant orbital moment enhancement of about 300% with respect to the bulk value and a perpendicular interface anisotropy field HsFe–GaAs of the order of −5×104 Oe. This may be partially due to an increased degree of localization of electronic states at the Fe/GaAs interface associated with the atomic scale interface structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359473
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Spin-dependent electron transport at the ferromagnet/semiconductor interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5804-5806 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A search for spin-dependent electron transport at the ferromagnet/semiconductor interface has been made by measuring the bias dependence of a photon excited current through the interface. A circularly polarized laser beam was used to excite electrons with a spin polarization perpendicular to the film plane. In samples of the form 3 nm Au/5 nm Ni80Fe20/GaAs (110), a significant transport current was detected with a magnitude dependent on the relative orientation of the spin polarization and the magnetization vector. At perpendicular saturation, the bias dependence of the photocurrent is observed to change in the range 0.7–0.8 eV when the helicity is reversed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369925
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Spin-dependent electron transport in NiFe/GaAs Schottky barrier structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4670-4672 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoexcitation at the Schottky barrier formed between 5 nm thick Ni80Fe20 films and both n+- and p−-type GaAs(100) substrates with doping density in the range 1023≤n(p)≤1025 m−3 was investigated using circularly polarized laser light. A helicity-dependent photocurrent dependent upon the magnetization configuration of the film and the Schottky barrier height was detected. The results provide evidence of spin-dependent electron transport through the NiFe/GaAs interface and show that the Schottky barrier height controls the spin-dependent current passing from the semiconductor to the ferromagnet. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373125
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...