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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1379-1381 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical study of the magnetic sub-bands, electron wave functions, and intraband transition strengths of GaAs–(Ga,Al)As quasiperiodic Fibonacci superlattices under in-plane magnetic fields is presented. Calculations were carried out in the effective-mass approximation and a parabolic model for the conduction band was used. Results were obtained for two magnetic fields related by integer powers of the golden mean τ=(1+(square root of)5)/2 with corresponding magnetic levels, electron wave functions, and transition strengths displaying a practically self-similar structure as appropriate for a GaAs–(Ga,Al)As Fibonacci superlattice. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1946-1947 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaAs films are grown by the close space vapor transport technique, using atomic hydrogen as the initial reactant. Measurements of concentration and mobility of majority carriers reveal that the grown films are n type, with donor concentrations ND≈1017 cm−3, and mobilities at 300 K of μn≈3600 cm2 V−1 s−1. The growth and etching rates versus inverse temperature plots show an Arrhenius dependence with an activation energy of 36 kcal mol−1 in both cases.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4045-4049 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thorough detailed study of donor and acceptor properties in doped GaAs–(Ga,Al)As semiconductor superlattices is performed within the fractional-dimensional approach, in which the real anisotropic "impurity+semiconductor superlattice" system is modeled through an effective isotropic environment with a fractional dimension. In this scheme, the fractional-dimensional parameter is chosen via an analytical procedure and involves no ansatz, and no fittings either with experiment or with previous variational calculations. The present fractional-dimensional calculated results for the donor and acceptor energies in GaAs–(Ga,Al)As semiconductor superlattices are found in quite good agreement with previous variational calculations and available experimental measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Publication Date: 2016-10-25
    Description: In order to compare magnetic and non-magnetic pinning, we have nanostructured two superconducting films with the regular arrays of pinning centers: Cu (non-magnetic) dots in one case and Py (magnetic) dots in the other. For low applied magnetic fields, when all the vortices are pinned in the artificial inclusions, the magnetic dots prove to be better pinning centers, as has been generally accepted. Unexpectedly, when the magnetic field is increased and interstitial vortices appear, the results are very different: we show how the stray field generated by the magnetic dots can produce an effective reduction of the penetration length. This results in strong consequences in the transport properties, which, depending on the dot separation, can lead to an enhancement or worsening of the transport characteristics. Therefore, the election of the magnetic or non-magnetic character of the pinning sites for an effective reduction of dissipation will depend on the range of the applied magnetic field.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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