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  • American Institute of Physics (AIP)  (14)
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  • 1
    Electronic Resource
    Electronic Resource
    Measurement of the zero-bias electron transmittance as a function of energy for half- and quarter-electron-wavelength semiconductor quantum-interference filters (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ballistic electron emission spectroscopy has been used to measure the electron transmittance function of both half- and quarter-electron-wavelength (using optics terminology) quantum-interference filters under zero applied voltage bias. At the design energy, these devices exhibit constructive and destructive interference, respectively. Second-derivative spectra from current versus voltage measurements clearly show both tunneling and above-barrier quasibound energy states. The spectra accurately reproduce the transmittance functions of the designed structures, attaining nearly the temperature-limited resolution at 77 K and 300 K. The presence of the above-barrier resonances has been confirmed conclusively by measurements on these complementary half- and quarter-wavelength device structures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120741
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  • 2
    Electronic Resource
    Electronic Resource
    Electron wave-packet response of above-all-band-edges semiconductor quantum resonant structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5415-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-dependent behavior of above-all-band-edges resonant propagating structures is presented. The results obtained are compared to those for the extensively studied double-barrier resonant tunneling structure for reference. It was found that for structures with the same resonant energies and resonance widths, the time-dependent characteristics are very similar. The structures were compared using two analytic approaches. The first is based on linear systems theory and the second on a finite-differences approach. It was found that for both structures, the quasibound state builds up at a rate determined by the parameters of the incident packet and decays with a time constant which corresponds to the lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355697
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  • 3
    Electronic Resource
    Electronic Resource
    Theory and design of semiconductor electron-wave interference filter/emitters (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 6158-6167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A voltage-biased semiconductor superlattice structure is designed to operate simultaneously as a continuously voltage-tunable, electron interference filter and as an electron emitter. Using the analogies between electromagnetic waves and electron de Broglie waves, a systematic procedure for designing the quantum wells and barriers comprising the electron-wave filter/emitter superlattice is developed. A generalized procedure for analyzing the electron-current transmittance and reflectance spectral responses of these superlattice structures is then presented. A practical, continuously tunable filter/emitter consisting of multiple layers of Ga1−xAlxAs (compositional superlattice) is designed to emit nearly monoenergetic 0.20-eV electrons by appropriate selection of the layer compositions and thicknesses. The constraints required to have thicknesses that are integer multiples of the monolayer thickness and to avoid phonon scattering of electrons into the L band are included. The filter/emitter is shown to have a wide tunable energy range. A sensitivity analysis of the device characteristics in the presence of fabrication errors reveals a very stable device response. Such quantum electron-wave devices could serve as continuously tunable hot-electron emitters in ballistic transistors and in future guided electron-wave integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343599
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  • 4
    Electronic Resource
    Electronic Resource
    Semiconductor electron-wave slab waveguides (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1483-1485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A one-dimensional semiconductor quantum well can act as a waveguide for ballistic electrons owing to the quantum mechanical wave behavior of these electrons. The allowed modes in an asymmetric quantum well slab waveguide are quantified. Electron waveguiding can occur for energies above one or both of the potential barriers. Due to dispersion, each electron waveguide mode has an upper-energy cutoff as well as a lower-energy cutoff. An example waveguide consisting of Ga0.85Al0.15As (substrate), GaAs (film), and Ga0.70Al0.30As (cover) is treated. This structure is a single-mode electron waveguide for [100] GaAs thicknesses of from 6 through 31 monolayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344404
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  • 5
    Electronic Resource
    Electronic Resource
    Semiconductor quantum wells as electron wave slab waveguides (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1842-1848 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum well in a semiconductor can act as a slab waveguide for electron waves in a manner analogous to the way a layered dielectric can act as a slab waveguide for electromagnetic waves (e.g., as commonly employed in integrated optics). In this work, the case of a general electron asymmetric slab waveguide (a quantum well comprised of three materials each with a different potential energy and a different effective mass) is analyzed and the conditions for electron waveguiding are quantified. Electron waveguide modes exist for electron energies in the well and for electron energies above one or both of the potential energy barriers. Furthermore, due to dispersion, each electron waveguide mode has an upper-energy cutoff as well as a lower-energy cutoff. This is in contrast to electromagnetic guided modes which typically have only lower-energy (low-frequency) cutoffs. At the upper-energy cutoff the electron wave is refracted into the substrate and/or cover. An example quantum well waveguide consisting of Ga0.80 Al0.20 As (substrate), GaAs (film), Ga0.55 Al0.45 As (cover) is analyzed. This structure is a single-mode electron waveguide for GaAs thicknesses of from 5 (1.413 nm) to 26 monolayers (7.349 nm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344357
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  • 6
    Electronic Resource
    Electronic Resource
    Semiconductor superlattice interference filter design (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2535-2540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantitative analogies that have been previously established [J. Appl. Phys. 65, 814 (1989)] between electron wave propagation in semiconductors and optical wave propagation in dielectrics may be used to translate thin-film optical device designs into semiconductor superlattice device designs. The procedure for this direct mapping is also described in the above reference. The resulting designs, however, have compositions that are not constrained to be within a usable compositional range and they have layer thicknesses that are not constrained to be integer multiples of a monolayer thickness. In the present work, a systematic design procedure is presented that includes these required practical constraints. This procedure is then applied to the design of Ga1−xAlxAs superlattice narrow interference filters. For pass kinetic energies in the range of 0.14–0.20 eV, compositions (values of x) and numbers of monolayer thicknesses needed to produce quarter-wavelength layers are calculated. The detailed design of an example narrow bandpass (15.4 meV) filter with a pass electron energy of 0.20 eV is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342775
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  • 7
    Electronic Resource
    Electronic Resource
    Minicomputer interface for magneto-optic spatial light modulator (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1843-1851 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Digital optical data storage and processing are rapidly increasing in technological importance. The magneto-optic spatial light modulator (MOSLM) is a relatively low-cost, small pixel optical parallel input device that is capable of binary amplitude or binary phase modulation of each pixel. Thus, it is well matched to digital optical coherent storage and processing technology. However, potential problems associated with its use include: lack of a design for a general minicomputer interface, lack of interactive data-page file generation software, lack of ability to switch single pixels in some cases, lack of remote-from-computer operation capability, spurious pixel switching, and catastrophic failure due to thermal effects. The hardware and software components of a versatile minicomputer interface that has been successful in overcoming all of these problems are described. This interface allows easy data entry of entire data pages or single pixels and minimizes cross talk and noise developed over long cable lengths. In tests, the designed interface has produced highly stable operating characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139530
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature scanning tunneling microscope for ballistic electron emission microscopy and spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 91-96 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Design details and initial results are presented for a low-temperature scanning tunneling microscope specifically intended for measurements of ballistic-carrier transmittance through heterostructures. The basic design is of the Besocke type, modified for ballistic electron emission microscopy and spectroscopy (BEEM). This instrument is the first to acquire BEEM spectra below 77 K. Salient features are (1) operation in a liquid-helium storage Dewar to below 6 K, (2) a lateral positioning range of 5 mm at low temperature, and (3) lateral drift rate less than 0.2 nm/h at the lowest temperatures. For BEEM spectroscopy, the microscope's high positional stability allows extended signal-averaging at a single location on the sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146206
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  • 9
    Electronic Resource
    Electronic Resource
    Erratum: "Electron wave optics in semiconductors'' [J. Appl. Phys. 65, 814 (1989)] (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4461-4461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343438
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  • 10
    Electronic Resource
    Electronic Resource
    Electron-wave quarter-wavelength quantum well impedance transformers between differing energy-gap semiconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2623-2630 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impedance transformers for ballistic (collisionless) electron waves traveling between dissimilar energy-gap semiconductors are designed as a series of quarter (electron) wavelength layers in the form of a compositional superlattice. The quantitative analogies that have been previously established [J. Appl. Phys. 65, 814 (1989)] between electron-wave propagation in semiconductors and electromagnetic-wave propagation in dielectrics are used. For the design energy, the electron wave would be totally transmitted and the structure is analogous to an antireflection coating in electromagnetic optics. Practical constraints on the impedance transformer layers are (1) their compositions must be within the usable compositional range and (2) their thicknesses must be integer multiples of a monolayer thickness. These constraints are included in the design process. Procedures for designing narrow-band, maximally flat (Butterworth), and equal-ripple (Chebyshev) impedance transformers of arbitrary spectral bandwidth are presented. Example practical single-layer and three-layer transformers for connecting GaAs and Ga0.8Al0.2As are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345469
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