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  • American Institute of Physics (AIP)  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2483-2485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the direct response of a superconducting Nb hot-electron bolometer mixer centered at 2.5 THz that incorporates an Au/SiO2/Al microstrip transmission line. The direct response is studied using a Fourier transform spectrometer. We find a peak response at a frequency of 2.1 THz, which is 20% lower than predicted based on a model that neglects the inductance effect in the microbridge. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409273
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  • 2
    Electronic Resource
    Electronic Resource
    Low-noise 1 THz superconductor–insulator–superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 436-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-noise heterodyne mixing at 1 THz is demonstrated in a quasioptical mixer incorporating Nb superconductor–insulator–superconductor tunnel junctions and a NbTiN/SiO2/Al tuning circuit. Receiver noise temperatures as low as 250 K at 850 GHz, 315 K at 980 GHz, and 405 K at 1015 GHz are measured—a factor of 2 improvement in sensitivity versus state-of-the-art 1 THz receivers, which incorporate normal metal tuning circuits. An analysis of the receiver sensitivity at 980 GHz demonstrates that NbTiN is low loss up to ∼1 THz. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384005
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  • 3
    Electronic Resource
    Electronic Resource
    Quantized conductance and electron focusing spectra of GaAs/AlGaAs point contacts fabricated by optical lithography (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2529-2531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Split gate quantum point contacts on a two-dimensional electron gas (2DEG) of GaAs/AlGaAs heterostructures are fabricated using conventional optical lithography. The typical opening of the split gates ranges from 0.25 to 0.5 μm. Applying negative voltages to the gate introduces horn-shaped constrictions. In a double point contact device, the point contact conductances are measured as a function of gate voltage, and transverse electron focusing is studied using one point contact to inject electrons ballistically into the 2DEG and the other to collect the electrons. Clear quantized conductance steps in units of 2e2/h are found at temperatures between 0.1 and 2 K. Also, electron focusing spectra are obtained for various point contact widths and some features are characterized by the geometry of the split gate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111563
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  • 4
    Electronic Resource
    Electronic Resource
    Low temperature current transport of Sn-GaAs contacts (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 334-336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measure low temperature current transport properties of superconducting Sn contacts to p+-GaAs. For contacts alloyed at 450 °C, the current-voltage characteristics show a strong dependence on alloying time. The critical temperature of Sn near the superconductor-semiconductor interface decreases from 3.8 to 1.8 K as the alloying time increases from 0 to 120 s. On the other hand, a long-time alloying increases the transparency of the interface. Using the Blonder, Tinkham, and Klapwijk model [Phys. Rev. B 25, 4515 (1982)], we find that the transmission coefficient of the interface increases from 0.2 to 0.7 by alloying. However, the normal state resistance calculated using the model is much smaller than the experimental value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110034
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