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  • 1
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    Short range ferromagnetic, magneto-electric, and magneto-dielectric effect in ceramic Co3TeO6 (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-01-29
    Description: We report observation of magneto-electric and magneto-dielectric couplings along with short range ferromagnetic order in ceramic Cobalt Tellurate (Co 3 TeO 6 , CTO) using magnetic, structural, dielectric, pyroelectric, and polarization studies. DC magnetization along with dielectric constant measurements indicate a coupling between magnetic order and electrical polarization. A strong anomaly in the dielectric constant at ∼17.4 K in zero magnetic field indicates spontaneous electric polarization, consistent with a recent neutron diffraction study. Observation of weak short range ferromagnetic order at lower temperatures is attributed to the Griffiths-like ferromagnetism. Furthermore, magnetic field dependence of the ferroelectric transition follows earlier theoretical predictions, applicable to single crystal CTO. Finally, combined dielectric, pyroelectric, and polarization measurements suggest that the ground state of CTO may possess spontaneous symmetry breaking in the absence of magnetic field.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
    Electronic Resource
    Electronic Resource
    Deep intrinsic and photostructural defect levels in amorphous selenium films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5122-5124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermally stimulated discharge current (TSD) behavior of native (dark rested) and irradiated amorphous selenium films (∼100 μm) has been studied in the temperature range 295–385 K. The TSD spectra of these films shows, in addition to the already reported relaxation at 310 K, a new relaxation peak in the temperature range 370–380 K. The origin of this relaxation is attributed to the trapping of charge carriers i.e., electron and holes at deep intrinsic and irradiation induced photostructural defect levels lying at ∼1.6 and 1.7 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348997
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of doping on sensitivity and response time of TiO2 oxygen gas sensor (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1500-1504 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The recent trend in gas sensor research is to achieve higher gas sensitivity and shorter response time at low operating temperatures. In the present study, titanium dioxide was studied as an oxygen gas sensor at different chromium (Cr) dopant concentrations. The sensitivity and response time measurements were carried out as a function of operating temperature and oxygen partial pressure. A higher sensitivity and shorter response time was observed at 700 °C in 0.40 wt % Cr doped sensor as compared to an undoped sensor, which showed higher sensitivity at 800 °C. The 0.40 wt % Cr doped sensor shows 13 times higher sensitivity as compared to undoped sensor. The porosity of the material decreases as Cr concentration increases. A large number of operation cycles were performed on the sensor, which shows the stability of the device over long period. The sensitivity and response time of the sensor were also correlated with electronic structure results obtained from x-ray photoelectron spectroscopy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150487
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  • 4
    Electronic Resource
    Electronic Resource
    Silicide mediated low temperature crystallization of hydrogenated amorphous silicon in contact with aluminum (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 913-918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction between hydrogenated amorphous silicon (a-Si:H) film and aluminum has been investigated by Transmission Electron Microscopy and Scanning Electron Microscopy (SEM). The formation of aluminum silicide was observed even at room temperature. Subsequent annealing of the sample showed [111], [110] and [311] orientations of aluminum silicide coexisting as revealed by the electron diffraction patterns. This silicide has a bcc structure with lattice parameter of 6.36 A(ring). The precipitation of Si at the interface was observed in SEM after selective etching of Al from the top surface of the sample. The silicide disappears completely at 300 °C with the formation of polycrystalline and porous silicon. The effect of temperature related structural changes on the electrical properties of Al/a-Si:H Schottky diode has also been studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360722
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  • 5
    Electronic Resource
    Electronic Resource
    Electric circuit model for MgO-doped ZrO2–TiO2 ceramic humidity sensor (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3854-3856 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The MgO-doped ZrO2–TiO2 ceramic pellets were studied for its humidity-sensitive electrical conduction. An equivalent circuit model has been proposed to define the humidity-sensitive electrical properties. This model is in agreement with the experimental findings. The electrical conduction is largely controlled by the intergranular impedance except at very high humidities. The impedance of the pellets showed inductive behavior in high-humidity region. This behavior can be attributed to the spherical paths adopted by charge carrier because conduction is mainly through the spherical grain surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122915
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  • 6
    Electronic Resource
    Electronic Resource
    Simple noncontact temperature sensor for diagnostic use in electron beam evaporators (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2371-2372 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple experimental setup for noncontact temperature monitoring of the vapor emitting surface in an electron beam evaporator is described. The setup consists of optics that focuses optical radiation emanating from the heated surface onto a sensor (photodiode). The photodiode transduces the optical input to a proportionate electrical signal that is indicative of the temperature. Suitability of this method at providing space and time resolved temperature distribution on the heated surface is discussed. Besides diagnostic work, the setup is used to determine transient thermal response of the heated surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143937
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  • 7
    Electronic Resource
    Electronic Resource
    Pulsed laser photoionization technique for recording atomic flux variations during deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2003-2007 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Depositions at rates higher than 1 nm/s show differences in properties when one deposits with a vapor stream that is modulated against those that are deposited with a steady vapor stream. For carrying out investigations along these lines, it was necessary to develop a real-time, noninvasive, and sensitive technique for determining the nature and extent of flux variations in atomic streams close to the deposition plate. A pulsed laser based resonant photoionization technique is proposed for meeting these requirements. The paper describes the method and its application to a case where modulation is caused by residual ripple in high voltage accelerating supply used in the electron gun of the evaporator. The proposed technique overcomes the limitation on sensitivity due to background pressure experienced in the nonresonant approach. Other attractive features are the use of much lower laser intensities for a given sensitivity and the employment of a simpler ion detection system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143990
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  • 8
    Electronic Resource
    Electronic Resource
    Photostructural defect states and residual potential in chlorine and arsenic doped amorphous selenium films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1915-1917 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of photostructural defect states and buildup of residual potential in pure, chlorine doped, and combinationally doped, i.e., chlorine and arsenic doped amorphous selenium films (∼100 μm) has been studied using the thermally stimulated discharge current technique. Combinationally doped films show minimum buildup of residual potential even though the photostructural defect states in them lie between the pure and the chlorine doped amorphous selenium films. These results have been explained in terms of the conductivity enhancement role of chlorine and the complimentary role of arsenic in sustaining the acceptance potential in the doped films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108362
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  • 9
    Electronic Resource
    Electronic Resource
    Charge trapping levels in vacuum evaporated polyvinylidene fluoride films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2507-2508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stimulated discharge current (TSD) behavior of vacuum evaporated polyvinylidene fluoride films (∼5000 A(ring)) has been studied at different polarization fields (2.0×103–1.8×104 V cm−1) and temperatures (333–393 K). The TSD spectra of these films show a single relaxation peak the position and activation energy of which depends on the polarization parameters. The origin of the peak has been attributed to the migration of the charge carriers, injected from the electrodes, at the macroscopic distances and their subsequent trapping; the trapping levels being distributed in their energies and lie between 0.46 and 0.72 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111581
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of chlorine doping on photostructural defect states in amorphous selenium films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3514-3515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of chlorine doping on photostructural defect states in amorphous selenium films (∼100 μm) has been studied using the thermally stimulated discharge current technique. Chlorine doping in amorphous selenium results in the shift of deep photostructural defect states C+3 and C−1 to relatively shallower levels, i.e., from 1.6 and 1.7 eV in pure films to 1.4 and 1.5 eV in chlorine-doped films for electrons and holes, respectively. These effects have been explained in terms of the enhancement in the conductivity of amorphous selenium and increase in the mobility of electrons and holes on chlorine doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105666
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