Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 3698-3699
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
To identify Ga- or Zn-related deep levels, deep level transient spectroscopy (DLTS) measurements were performed repeatedly during the elemental transmutation of 67Ga to 67Zn. The radioactive isotope 67Ga was recoil implanted into p-type 6H–SiC for radiotracer experiments. The DLTS spectra exhibit one peak of time-dependent height. It describes the increasing concentration of the daughter element Zn with the half life of the nuclear decay. Thus, one Zn-related level at 1.16 eV above the valence band edge is definitely identified. There is no deep level of Ga in the lower part of the band gap. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122867
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