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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1146-1152 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simultaneous pulsing of two, closely spaced discharge tubes inhibits the ignition of one of the discharges. Such cross-talk is prominent for discharge tubes having a floating cathode potential (i.e., with an impedance attached to the cathode), driven by short duration pulses, and having a long discharge path. The cross-talk originates from at least two mechanisms. First, a voltage jump at the cathode, induced by a capacitive coupling with another cathode, makes the anode-cathode potential smaller, and hence discharge ignition is inhibited. Second, wall charges induced by a discharge in a neighboring tube also inhibit ignition. The cross-talk can adversely affect the operation of gas discharge displays. It is demonstrated that cross-talk in the panel can be eliminated by adopting a dephasing drive technique.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 7259-7267 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Optical bistability has been observed in highly concentrated substituted fluorescein dye solution and in thin (∼1 μm) doped polymeric films. For fluorescein, at concentrations larger than 10−5 mol/l dye dimers are formed. The dimer–monomer equilibrium constant is 105 l/mol so that most of the dye species are in the dimer form. At 480 nm the dimer absorption cross section is 10−18 cm2/molecule, while that for the dye monomer molecule is 7.6×10−17 cm2/molecule. Upon laser excitation dimers dissociate to form monomers thus providing a highly nonlinear laser induced absorption. The high nonlinear absorption coefficient can be utilized for optically bistable response of the dye system. Optical bistability was observed by placing dye solutions or dye thin films inside a Fabry–Perot resonator and exciting it with 480 nm dye laser pulses of 10 ns duration. The effect is more pronounced in 10−4 mol/ l fluorescein than in 10−6 mol/l fluorescein in which dimer formation is not that efficient. In disodium fluorescein, eosin Y and erythrosin B no significant dimer formation is observed even at 10−3 mol/l dye concentration. The observed bistability both in solution and in thin films can be explained in terms of recent models for optical bistability in nonlinearly absorbing molecular system.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5739-5746 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear absorption coefficient of InAs/InxGa1−xSb superlattices is optimized with respect to layer widths, indium content, substrate type and substrate orientation, interface type, and choice of buffer layers based on a model envelope-function approach (EFA) involving the solution of a 6×6 EFA Hamiltonian (heavy, light, and conduction bands) for wave functions and subband energies. Free-standing superlattices as well as superlattices matched to a number of substrates are considered. In general, increasing the indium mole content from 0 to 0.4 doubles the magnitude of absorption. Changing the substrate orientation from [001] to [111] significantly increases absorption in all cases studied due to the increased heavy-hole mass and the larger InAs-conduction-band–InGaSb-valence-band offset in the [111] direction. The use of an In0.4Ga0.6Sb substrate leads to higher absorption because all the beneficial effects of strain are placed in the InAs layer, which is more sensitive to strain than is the InGaSb layer. The larger valence–conduction-band offset for InSb than for GaAs interfaces also leads to higher absorption. The model results agree best with available data when a 100 meV InAs-conduction-band–GaSb-valence-band offset is used. Specific superlattice parameters that optimize absorption for free-standing superlattices on GaSb at three cutoff wavelengths are proposed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6373-6378 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a highly accurate numerical computer model to solve the problem of equilibrium barrier formation in graded Hg1−xCdxTe heterojunctions including valence-band offsets. The present calculation is an extension of our previous work [J. Appl. Phys. 62, 3267 (1987)], which incorporated physical features designed to improve upon previous calculations, but employed the common anion rule. First, we analyze and compare our results to the recent work of Oda [Infrared Phys. 27, 49 (1987)] and find significant differences. Then, we make a comparison with the results of our previous work. We observe clear trends between our results with and without the valence-band offset. Unlike Oda, we do not make general predictions with regard to the conditions needed to support the formation and growth of a barrier in the conduction band, but instead find the band profiles to be a complex function of all the junction design parameters. For the present study involving narrow gap p on wide gap n heterojunctions, and the assumed: HgTe:CdTe 300-meV valence-band offset, the band profiles do not differ significantly from the profiles assuming the common anion rule.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4300-4307 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that when account is taken of the attenuation of incident radiation into the bulk of a photoconductor, as a result of the absorption, the expressions for the responsivity and detectivity are modified. An earlier derivation [Infrared Phys. 20, 385 (1980)] attributed the difference in the operation of the detectors in the transverse and longitudinal geometries to carefully defined "effective'' quantum efficiencies. Here we show that a more physically motivated view attributes the difference to the different photoconductive gains for the two geometries. It is shown that the appropriate gains for the responsivity and detectivity are not the same.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2770-2772 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intrinsic carrier concentrations in Hg1−xCdxTe are calculated with the use of the Fermi–Dirac statistics thus expanding on our previous calculation which employed the Boltzmann statistics. The use of Boltzmann statistics for Hg1−xCdxTe is limited to x≥0.20 and is not appropriate for the narrow band gap x〈0.20 compositions. Our present treatment improves on existing calculations by using composition and temperature dependent momentum matrix element squared, which is the input to the Kane's k ⋅ p theory, and by making no approximations to the band structure beyond those inherent to Kane's theory. We find that our results for x≥0.20 using both statistics are in excellent agreement. We also compare our results with those of Hansen and Schmit. Good agreement is found for the range of 0.15≤x≤0.40.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2533-2540 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We are presenting an analytic model for the figures of merit of a novel extrinsic infrared quantum detector—the blocked impurity band (BIB) detector. The detector consists of top and bottom contacts, a heavily doped active layer, and a nearly intrinsic layer, called the blocking layer, to stop the motion of hopping carriers in the impurity band. The responsivity, gain, excess noise factor, and detectivity of the BIB detector are calculated as functions of the device dimensions, doping concentrations, and the applied reverse bias, which controls the electric field in the depletion region, devoid of hopping carriers, of the device underneath the blocking layer. Central to our model is the inclusion of impact ionization of carriers in the calculation of the detector response and of the associated noise. For practical detector dimensions and doping concentrations, and at 2-V reverse bias, we calculate the responsivity to be on the order of 2 A/W, and detectivities, with 1012 photons/cm2 s background photon flux, on the order of 1013 cm Hz1/2/W. We provide analytic expressions for the figures of merit which should prove useful to other researchers in the field who want to optimize the detector design.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5583-5588 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a recent paper [F. Szmulowicz and F. L. Madarasz, J. Appl. Phys. 62, 2533 (1987)] we introduced details of an analytical model for a top side illuminated blocked impurity band infrared detector operating under background limited conditions (BLIP). In the present paper we extend that model to a bottom side illuminated detector operating in the presence of thermally generated carriers (non-BLIP case) as well as the optically generated background carriers. We display results of a parametric study including gain, quantum efficiency, the excess noise factor, and hence the detector figures of merit responsivity and detectivity, as functions of the detector temperature. Our study of the thermal noise includes the Poole–Frenkel effect. The results of the present calculation determine optimal operating temperatures as well as bias voltages. We show that Si:As blocked impurity band detectors, doped to 5×1017 cm−3, will be background limited below 13.5 K at low background, 1010 photons cm−2 s−1 operation, with responsivities and detectivities on the order of 5 A/W and 1014 cm Hz1/2/W, respectively.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3267-3277 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of equilibrium barrier formation in graded Hg1−xCdxTe heterojunctions is solved with the use of a highly accurate computer model. The present calculation incorporates several features designed to improve on past efforts. The Poisson equation is solved as a nonlinear integro-differential equation. Fermi–Dirac statistics are used to allow for the degeneracy associated with inversion for narrowly graded junctions and the degeneracy of the native defect donors. The band structure is obtained from the numerical solution of the secular equation. Fermi–Dirac statistics are taken to govern the degree of ionization of the acceptors and acceptorlike traps. Acceptors are treated as divalent flaws and their ionization energies as linear functions of the cadmium composition. The results are compared to the recent work of Bratt and Casselman [J. Vac. Sci. Technol. A 3, 238 (1985)], and the earlier work of Migliorato and White [Solid-State Electron. 26, 65 (1983)]. Significant differences are found. The results and differences are analyzed. Further computations are made in order to investigate the impact of elevated temperatures and the interdiffusion of doping concentrations along with compensation effects. It is shown that even a smeared p-n junction can have an advantageous effect.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 310-311 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the photoconductive gain of a longitudinal detector is given by the ratio of the average carrier lifetime to the interelectrode transit time regardless of the absorption profile of the detector. Both corpuscular and macroscopic points of view are considered.
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