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  • American Institute of Physics (AIP)  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4106-4110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of a displacement field in single crystal silicon resulting from high dose hydrogen implantation and subsequent heat treatments has been investigated by MeV 4He+ Rutherford backscattering in channeling conditions, double crystal x-ray diffraction, and transmission electron microscopy. The results obtained in samples annealed for various times in the temperature range 220–350 °C have been explained in terms of a kinetic model which assumes the formation of clusters of hydrogen molecules. The growth of the displacement field is thermally activated with an activation energy of 0.50±0.05 eV, suggesting that the limiting process could be the release of hydrogen atoms bounded to defects created by ion implantation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367165
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  • 2
    Electronic Resource
    Electronic Resource
    Stress and interface morphology contributions in the crystallization kinetics of a GexSi1−x thin layer on (100) Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3528-3533 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the solid phase epitaxial growth from amorphous phase of a strained GexSi1−x thin layer made by 74Ge+ ion implantation of (100) Si is presented. Ge peak concentration is 6.4 at. %. Principally employed techniques are time-resolved reflectivity for crystallization rate measurements and cross sectional transmission electron microscopy (TEM) for interface morphology imaging. The kinetics is heavily affected by the mismatch stress induced by the Ge; the experimental data cannot however be explained considering only the average stress along the amorphous-crystal interface and another mechanism is required. Cross sectional TEM observations of partially crystallized samples reveal the tendency of the interface to roughen with an evolution reflected in the crystallization activation energy. Such roughness is assumed to affect the kinetics by locally enhancing the interface stress. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361404
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  • 3
    Electronic Resource
    Electronic Resource
    Solid-phase epitaxial growth of Ge-Si alloys made by ion implantation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2644-2649 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-phase epitaxial growth was studied in germanium-implanted 〈100〉 silicon wafers as a function of germanium fluence, annealing temperature, and time. MeV He Rutherford backscattering in channeling conditions, cross-sectional transmission electron microscopy, double-crystal x-ray diffraction, and secondary-ion mass spectroscopy techniques were used to characterize the samples. At low fluences, up to 1×1015 cm−2 at 130 keV, the crystallization kinetics is similar to that measured on self-amorphized silicon. In the high-dose samples, prepared by multiple implants with a total dose of 3.12×1016 cm−2, the growth rate at fixed temperatures decreases. A comparison with literature data, obtained by similar experiments performed on amorphized uniform GexSi100−x films prepared by molecular-beam epitaxy or chemical-vapor deposition, reveals that the concentration gradient, unavoidable in implanted samples mainly at the end of the ion range region, is strictly connected with the observed decrease.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351035
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  • 4
    Electronic Resource
    Electronic Resource
    High-dose helium-implanted single-crystal silicon: Annealing behavior (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4802-4808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modifications induced in single-crystal silicon by implanted helium have been investigated by ion beam techniques. The damage has been detected by 2 MeV 4He+ backscattering in channeling conditions and the helium in-depth distribution by 7 and 8 MeV 15N++ elastic recoil scattering. The samples prepared by implanting 2×1016 cm−2 helium ions at 20 keV in silicon wafers held either at 77 K (LNT sample) or at 300 K (RT sample) have been heat treated for 2 h in the 100–800 °C temperature range. In the as-implanted LNT sample the damage maximum is at 130±20 nm and shifts in-depth to 180±10 nm after annealing at 200 °C, in the as-implanted RT sample, the damage maximum is already located at 180±10 nm. In the 250–500 °C temperature range, the LNT and RT samples follow the same annealing path with only slight differences in the temperature values; in both cases, the dechanneling signal increases and reaches a maximum value of nonregistered silicon atoms of 2.2–2.5×1022 at/cm3. In the same temperature range, the helium signal becomes narrower, builds up in a region centered on 220±20 nm and no appreciable loss of helium can be detected. The growth of the damage is consistent with the creation of cracks and a etherogenous distribution of bubbles filled with high pressure helium which stress the lattice; for the channeling Rutherford backscattering technique, their action is similar to silicon interstitials. At temperatures above 500 °C, helium is released from the samples; this process is associated with a decrease of the damage and the formation and increase in size of voids. At 900 °C empty voids with a diameter around 20 nm are found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368803
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  • 5
    Electronic Resource
    Electronic Resource
    Helium-implanted silicon: A study of bubble precursors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1401-1408 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of helium atoms with the radiation damage imparted to (100) silicon single crystal by He+ implantation at 5×1015 cm−2, 20 keV, and liquid–nitrogen temperature is investigated by means of various complementary techniques during and after thermal treatments. Thermal programmed desorption was used to study the dissociation kinetics of helium from the defects and to plan suitable heat treatments for the other techniques. The helium profiles were determined by 8 MeV 15N2+ elastic recoil detection, quantitative data on damage were obtained by channeling Rutherford backscattering spectrometry, double crystal x-ray diffraction, and positron annihilation spectroscopy. Isothermal treatments at 250 °C produce first helium redistribution and trapping in vacancy-like defects, rather than helium desorption from traps. The process is thermally activated with an effective activation energy, dispersed in a band from 1.1 to about 1.7 eV. For higher temperature treatments (2 h at 500 °C) the traps are almost emptied and at 700 °C all vacancy-like defects are annealed out. No bubbles or voids are observed by transmission electron microscopy, either in the as-implanted or in annealed samples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369335
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  • 6
    Electronic Resource
    Electronic Resource
    Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2831-2833 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High order Laue zone lines present in the central disk of convergent beam electron diffraction patterns have been used to determine the bulk mismatch in thinned, cross-sectioned heterostructures, where a relaxation occurs along the thinning direction. The position of these lines is sensitive to lattice parameters along different crystallographic directions, so that information on the residual strain along the growth and the thinning directions can be extracted from a single diffraction pattern. This information has been properly combined using the isotropic elasticity theory to give the bulk mismatch. The results are in good agreement with independently obtained bulk measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116339
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