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  • American Institute of Physics (AIP)  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Lateral carrier profile for mesa-structured InGaAs/GaAs lasers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6268-6271 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the influence of lateral carrier diffusion on the properties of In0.35Ga0.65As/GaAs multiple quantum well lasers by comparing theoretical and experimental results. A model including the carrier diffusion terms into the rate equations has been used to calculate the dc and small-signal lateral profiles for both unconfined and confined carriers in mesa waveguide devices. The theoretical results were compared with experimental results of the frequency dependence of the subthreshold electrical impedance and small-signal spontaneous emission, and with the measured threshold currents for lasers with different mesa widths. The comparison yielded an estimation for the nonradiative and radiative recombination coefficients, the ambipolar diffusion constant, and the external surface recombination velocity. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364414
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  • 2
    Electronic Resource
    Electronic Resource
    Photo-induced electrical defects in low-temperature photochemical vapor-deposited silicon nitride films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1617-1620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of the photochemical vapor-deposited silicon nitride/silicon interface are presented as a function of deposition temperature (70 to 200 °C). High values of interface state density Nss (about 3×1012 cm−2 eV−1), an equivalent charge at the interface Qss (about 5×1011 cm−2), and an important injection-type hysteresis of the capacitance voltage C-V curves are observed in the as-grown material. Most defects are found to be generated during the deposition process by the ultraviolet illumination used to activate the chemical reaction of the gases. Low-temperature (250 °C) and short-time (30 min) annealings eliminate part of the defects, resulting in lower values of Nss (about 1×1012 cm−2 eV−1), Qss (about 5×1010 cm−2), and reduced injection-type hysteresis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345627
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  • 3
    Electronic Resource
    Electronic Resource
    Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a simple model for the carrier capture and escape processes in quantum-well (QW) lasers, which yields an analytical expression for the ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling effect. It also shows an exponential dependence of the escape time on the effective barrier height and on the inverse of the temperature. A comparison between experimental and calculated values for InGaAs/GaAs QW lasers is presented showing a good agreement. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126077
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 776-778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, a capacitance–voltage (C–V) technique, based on a combination of measured and simulated C–V characteristics, was applied to characterize In0.35Ga0.65As/GaAs multiquantum-well laser structures at room temperature. A theoretical model, including the self-consistent solution of Poisson and Schrödinger equations, was developed to simulate the C–V characteristics and the carrier concentration profiles. Measured C–V carrier concentration profiles were used to obtain the average impurity concentration in active regions. The comparison between experimental and simulated results was used to determine the conduction band offset, yielding ΔEc/ΔEg(approximate)0.8. In the case of samples with postgrowth quantum-well intermixing, this technique was applied to extract the characteristic interdiffusion length. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306660
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier profile for In0.35Ga0.65As/GaAs multiquantum well lasers from capacitance–voltage measurements (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1138-1140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier profile for MBE grown In0.35Ga0.65As/GaAs multiquantum well laser structures with nominally undoped and beryllium-doped active regions was determined by using the capacitance–voltage (C–V) technique at room temperature. A simple theoretical model was used to extract the impurity concentration and the quantum-well carrier density from the experimental profiles. We obtained a high carrier concentration in nominally undoped devices caused by a strong growth temperature dependent Be diffusion from the p-cladding layer, and no difference between doped samples with different nominal dopant location. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115738
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  • 6
    Electronic Resource
    Electronic Resource
    Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3158-3160 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier lifetime in undoped and p-doped mesa and ridge waveguide In0.35Ga0.65As/GaAs multiple-quantum-well lasers is extracted from the frequency response of the spontaneous emission. The radiative recombination coefficient is found to be the same for mesa and ridge waveguide lasers, and is nearly independent of the doping level. For ridge waveguide lasers, a simple method is proposed to obtain the lateral broadening of the active region due to carrier diffusion. When the corrected active region width is considered, the threshold carrier densities for both undoped and p-doped lasers are independent of the lateral structure and cavity width. Further, the surface recombination velocity in mesa lasers is determined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116814
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