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  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional growth of strained Ge0.85Si0.15 on Si(111) by liquid phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2083-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxy immediate to thermodynamical equilibrium is investigated for liquid phase epitaxy of Ge0.85Si0.15 on Si(111). Below and beyond the critical thickness for strain relaxation, the GeSi layer grows in a two-dimensional mode. The critical thickness agrees well with mechanical equilibrium considerations. Strain relaxation is found to take place by the confined formation of misfit dislocations directly at the Ge0.85Si0.15/Si interface. We do not observe half-loop formation at the layer surface. The misfit dislocations (b=1/6〈112〉) form regular networks, which are buried under a structurally perfect relaxed GeSi layer virtually free of threading dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351644
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  • 2
    Electronic Resource
    Electronic Resource
    Matching pp waves to the Kerr metric (1990)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 31 (1990), S. 144-146 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Alternative pairs of impulsive pp waves (accompanied by shocks) that interact to produce a Kerr geometry are compared. In one case, discovered by Chandrasekhar and Xanthopoulos [Proc. R. Soc. London Ser. A 408, 175 (1986)], analytic extension across the horizon revealed a timelike singularity analogous to the ring singularity of the Kerr metric. In another, presented here for the first time, analytic extension across the horizon reveals instead an asymptotically flat exterior Kerr geometry. The pp wave pulse shapes that result in the formation of these two different Kerr interaction regions are displayed graphically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528874
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial Fe films on (100)GaAs substrates by ion beam sputtering (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 285-287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of single-crystal Fe films on GaAs substrates in (100) orientation by ion beam sputtering. Magnetic measurements show that the crystalline anisotropy field of these films is substantially the same as that of bulk single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98474
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4526-4530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The very small lattice mismatch between GaP and Si implies negligible coherency strains when GaP is grown epitaxially on Si. Moreover, GaP is expected to show little plasticity below ∼700 °C. It is thus unlikely that either the small coherency strains or the thermal mismatch stresses would be sufficient to generate the partial dislocations responsible for planar defects in an epitaxial film grown at temperatures below ∼700 °C. However, high-resolution electron microscopy micrographs of the early stages of epitaxial growth of GaP on Si at 500 °C show a high density of stacking faults and microtwins in the film. It is argued that in epitaxial growth processes, planar faults are not formed as a result of interfacial stresses; instead, a mechanism for the formation of stacking faults and twins is proposed which is based on errors in the stacking of close-packed planes in the early stages of nucleation and growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341280
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  • 5
    Electronic Resource
    Electronic Resource
    New continuous wave infrared Ar-Xe laser at intermediate gas pressures pumped by a transverse radio frequency discharge (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 721-722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An atomic Xe laser with a transverse rf excitation has been operated in a cw mode in the intermediate pressure regime. The laser output spectrum consisted of 5 Xe lines with wavelengths of 2.03, 2.63, 2.65, 3.37, and 3.51 μm. The unoptimized total output power of 330 mW was obtained for a gas mixture Ar:He:Xe=59:40:1 at a pressure of 85 Torr and a rf input power of 150 W and excitation frequency of 121 MHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109939
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  • 6
    Electronic Resource
    Electronic Resource
    Nanostructure and chemistry of a (100)MgO/(100)GaAs interface (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 564-566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy (TEM) shows that MgO films, grown on (001) GaAs by magnetron sputtering, are single crystal with a cube-on-cube relationship with the substrate, even though they are separated from the substrate by an amorphous interlayer. Scanning TEM–energy dispersive x-ray and scanning TEM–electron energy loss spectroscopy analysis of the interlayer shows that it consists of the native oxide of GaAs as well as nanocrystalline MgO. It is proposed that epitaxial MgO nucleated at pin holes produced by volatilization of the native oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112296
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  • 7
    Electronic Resource
    Electronic Resource
    Germanium "quantum dots" embedded in silicon: Quantitative study of self-alignment and coarsening (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 269-271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on experiments aiming to produce Ge quantum dots embedded in Si. Employing cross-sectional transmission electron microscopy, we have studied the misfit stress-induced self-alignment of islands belonging to consecutive Stranski–Krastanov layers of Ge buried in Si by molecular beam epitaxy. Quantitative evaluation of the micrographs has revealed the critical Si interlayer thickness below which the island positions in successive Ge layers begin to correlate. Moreover, we have quantitatively analyzed the influence of the Si interlayer thickness on the coarsening of the Ge islands from one buried Ge layer to the next. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123277
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