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  • American Institute of Physics (AIP)  (8)
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetism of high-Tc superconductors is still the subject of intensive investigation. Zn substitution for Cu together with removal of oxygen suppresses the superconductivity quickly. We prepared two crystals to perform a neutron scattering study of the spin fluctuations of La2−xSrxCu1−yZnyO4−δ. One is a Zn-doped and deoxygenated crystal La1.86Sr0.14Cu0.988Zn0.012O4−δ (#1) which does not show superconductivity above 1.5 K. The other is a Zn-doped crystal La1.86Sr0.14Cu0.988Zn0.012O4 (#2) which shows superconductivity below 16 K. The incommensurate spin excitations observed previously in superconducting samples1,2 containing no Zn remain in both samples. However, there is significant difference in the spectral weight χ‘(q,ω) at low temperatures between the non-superconducting and superconducting Zn-doped crystals. In crystal #1 the spectral weight at low temperatures is qualitatively similar to that of Zn-undoped non-superconducting samples.3 In crystal #2 the spectral weight at low temperatures is qualitatively similar to that of Zn-undoped superconducting samples.1,2 These results demonstrate that there is an intimate relationship between the magnetism and the superconductivity. We are in the process of further measurements.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8231-8233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistances of ZnSe epitaxial layers etched by reactive ion etching (RIE) with use of a gas mixture of ethane and hydrogen were measured. The results showed that a high resistivity region was introduced by RIE. Characterization was done by transforming the measured resistances to the electrically active thickness estimated from the resistivity of as-grown ZnSe layers. The estimated electrically active thicknesses were smaller than the thickness of ZnSe epitaxial layers remaining after RIE, for both p- and n-ZnSe. The influence of heat treatment and current injection on the high resistivity regions differed between p- and n-ZnSe.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6223-6227 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structure of stacking faults formed in pairs in a ZnSe epitaxial layer grown by gas source molecular beam epitaxy on a GaAs(001) buffer layer was determined with transmission electron microscopy. Extrinsic type stacking faults were formed on (111) and (1¯1¯1) planes with the same polarity, which was determined by convergent-beam electron diffraction. The two stacking faults meet at a point which is a few atomic layers away from the interface between ZnSe and GaAs. Partial dislocations at the edge of the stacking faults were found to be the Shockley type ones with a Burgers vector of 1/6〈211〉. Probable formation processes of the stacking faults have been discussed. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5232-5234 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization analysis of the transmitted beam was performed using a pulsed neutron source in a reentrant spin-glass (RSG) system Ni1−xMnx, for a concentration range (0.23≤x≤0.28) encompassing the critical concentration. The same samples were previously used to determine the magnetic phase diagram by magnetization measurements. The polarization P was measured as a function of temperature (15≤T≤300 K), neutron wavelength (3≤λ≤10 A(ring)) and applied field (7 Oe≤H≤125 Oe). Unlike other RSG systems, P measured in a 7 Oe field decreases at all temperatures below the Curie temperature even for the samples close to the critical concentration. The wavelength dependence of the polarization indicates the existence of magnetic domains whose size δ decreases with increasing x from a few tenths of micrometers at x=0.23 to a few thousands of angströms at x=0.25. No depolarization occurs for x〉0.25. As shown for x=0.23, the irreversibilities of the polarization, which depends on the cooling conditions, indicate that the domain arrangement freezes at low temperature. Clearly, in NiMn, the drop of the susceptibility at low temperature does not result from a decrease of the size or magnetization of the domains but from a slowing down of their mobility.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5849-5851 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetite colloidal fluid with a carrier fluid of deuterium oxide (D2O) was prepared to eliminate the incoherent scattering by hydrogen nucleons and the depolarization of cold neutrons was measured. The magnetic fluid was cooled down to 17 K in an external magnetic field of 10 kOe. The sample exhibited a finite residual magnetization Mr, which decreases with increasing temperature from 17 K. With elevating the temperature from 17 to 300 K, the depolarization was measured in three cases in which the directions of the beam, Mr, and polarization are mutually changed. The polarized neutrons transmitting through the sample were depolarized by the magnetic moments in the colloidal particles. The polarizations as a function of the product of Mr and neutron wavelength λ at different temperatures reduce to the same functional form. The model which shows that no interactions exist among the ferrous colloidal particles succeeds partly in explaining the experimental results.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3400-3402 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The paramagnetic scattering cross section of the anisotropic metallic ferromagnet MnP has been measured up to the zone boundaries along the [100] and [010] directions perpendicular to the easy magnetization axis. The spectral shape functions in both directions are well fitted to a Lorentzian form at T=TC (290.5 K), 1.03TC, and 1.20TC except those close to the zone boundaries. Near TC the linewidth along [010] follows the dynamical scaling prediction for the isotropic ferromagnet Γ(q)∝q2.5. On the contrary, a unique q dependence, Γ(q)∝q3.2, along [100] was observed. However, these q dependencies deviate at small q(q〈0.1 A−1 along [100] and q〈0.02 A−1 along [010]), suggesting the existence of a residual linewidth of Γ0∼0.02 meV at q=0.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 67-69 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A delta-function-shaped Sb doping spike in Si is prepared by deposition of Sb on Si(001) followed by low-temperature molecular beam epitaxy of Si. The depth profile of the Sb atoms is measured using high-resolution Rutherford backscattering spectroscopy, yielding a depth resolution of 0.3 nm. The observed profile shows two peaks corresponding to the δ-doped layer (of width 0.5 nm) and Sb atoms on the surface. The latter are due to surface segregation of Sb atoms during the growth of the Si cap layer. The surface segregation rate is derived from the observed results at temperatures 70–280 °C. It is larger than the value extrapolated from high-temperature ((approximately-greater-than)400 °C) data by several orders of magnitude and shows a very weak temperature dependence as compared to the high-temperature data. These features indicate a new surface segregation mechanism at low temperature. A mechanism for this anomalous segregation is discussed. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3025-3026 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers grown by gas source molecular beam epitaxy were etched by reactive ion etching (RIE) with a gas mixture of ethane and hydrogen (C2H6/H2). Smooth etching surfaces were obtained under the following RIE conditions: an ethane concentration (flow fraction) of 3%, total flow (C2H6+H2) of 55 sccm, total pressure of 15 Pa and radio frequency power density of 0.6 W/cm2. This ethane concentration is smaller than that in III–V semiconductors, 5%–7%. The etching rate of ZnSe was 21 nm/min and smaller than that of III–V semiconductors.
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