ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polycrystalline In2O3:Sn (ITO) films have been prepared by reactive radio frequency diode sputtering of an oxidic target using various oxygen/argon mixtures. They mostly contain more oxygen than the ideal crystal. When deposited at low pressure, the crystals have an expanded lattice (up to 3.5%) and, for small oxygen addition to the sputter gas, are also denser than the ideal crystal. This is explained by an incorporation of additional oxygen in the bixbyite structure, possibly into constitutional vacancies. Upon annealing, the lattice relaxes, however, the additional oxygen remains in the films. A model of oxygen segregation into grain boundaries is developed, that could also explain the grain–subgrain structure sometimes reported for ITO films. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1287603
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