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  • 1
    Publication Date: 2015-07-14
    Description: Thermoelectric materials can directly convert heat into electrical energy. The characterization of different materials is an important part in thermoelectric materials research to improve their properties. Usually, different methods and setups are combined for the temperature dependent determination of all thermoelectric key quantities — Seebeck coefficient, electrical conductivity, and thermal conductivity. Here, we present a measurement system for the simultaneous determination of all of these quantities plus the direct determination of the figure of merit by means of the Harman method z T H in a temperature range from room temperature up to 600 K. A simultaneous measurement saves time and reduces the measurement error, and the change of all material properties can be monitored even for unstable materials. Thermal conductivity measurements are inherently affected by undesired thermal losses, in particular, through radiation at higher temperatures. We show a simple experimental approach to measure radiation losses and correct for those. Comparative measurements on traditional systems show good agreement for all measured quantities.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 2
    Publication Date: 2016-02-03
    Description: Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2- μ m-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of {111} planes and an apex formed by {137} and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 3
    Publication Date: 2014-07-30
    Description: The epitaxial growth of Ge/Si 0.15 Ge 0.85 multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3  μ m thick reverse, double-step virtual substrate with a final composition of Si 0.10 Ge 0.90 has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3 × 10 7  cm −2 and an interdiffusion layer at the well/barrier interface of 2.1 nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si 0.15 Ge 0.85 MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si 0.15 Ge 0.85 QWs grown on Si(001) through a thick graded virtual substrate.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 4
    Publication Date: 2014-07-10
    Description: We have developed a sample holder design that allows for electrical conductivity measurements on a disk-shaped sample. The sample holder design is based on and compatible with popular measurement systems that are currently restricted to bar-shaped samples. The geometrical correction factors which account for the adjusted measurement configuration were calculated using finite element modeling for a broad range of sample and measurement geometries. We also show that the modeling results can be approximated by a simple analytical fit function with excellent accuracy. The proposed sample holder design is compatible with a concurrent measurement of the Seebeck coefficient. The chosen sample geometry is furthermore compatible with a thermal conductivity measurement using a laser flash apparatus. A complete thermoelectric characterization without cutting the sample is thus possible.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 897-905 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a method to predict products, transition states, and reaction paths of unimolecular chemical reactions such as dissociation or rearrangement reactions of small to medium sized molecules. The method thus provides the necessary input for established procedures to compute barrier heights and reaction rates, which conventionally have to be assumed heuristically. The method is an extension of the force field based conformational flooding procedure, but here aims at an accelerated barrier crossing of chemical reactions rather than conformational motions. Accordingly, it is now coupled to density functional molecular dynamics, such that the chemical reaction under study takes place at the picoseconds time scale set by todays computer technology. Barrier crossings are accelerated by means of an additional energy term (flooding potential) that locally destabilizes the educt conformation without affecting possible transition states or product states. The method is applied to two test systems, bicyclopropylidene and methylenecyclopropane, for which the reaction paths are predicted correctly. New details of reaction pathways are found, such as a transient concerted, but asynchronous rotation of the two methylene groups for the bicyclopropylidene→methylenespiropentane reaction. Our method can be applied to simulations in the gas phase as well as in solution and can be combined with force field simulations, e.g., in hybrid density functional/force field (QM/MM) computations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3383-3385 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the generation of pulsed optically pumped far-infrared (FIR) radiation with a repetition rate of 200 kHz. These pulses were obtained in a straightforward method by pumping a FIR resonator with a high repetition rate, rf-excited, waveguide CO2 laser. Pulses approximately 50 ns wide were generated both at 432.6 μm in HCOOH, and 117.7 μm in CH2F2. The pulse width of the FIR radiation was studied as a function of the CO2 pulse width, and the relative delay between the two was measured. Based on this data we conclude that the FIR radiation was gain switched and of a duration which was a function of either the gain bandwidth of the FIR transition, or more likely the FIR cavity parameters.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3274-3276 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present intersubband absorption measurements performed on p-type quasistrain-compensated modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrates. Several intersubband absorption peaks are observed up to room temperature. A strong confinement shift of the resonance occuring between the ground and the first excited heavy hole states has been observed, with the absorption peak shifting from λ=5.3 μm to as short as 3.8 μm. Excellent overall agreement with a 6 band k⋅p calculation is obtained, proving the accuracy of recently predicted values of band offsets. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3218-3220 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled C-induced Ge dots are islands which are not formed by the Stranski–Krastanov mode of growth. They are formed by a three-dimensional mode originating from the undulating strain fields of the C alloyed Si (100) surface. This opens additional possibilities to control the size and the shape of these dots by modifying the strain fields of the C-alloyed Si surface. Here, we show that the amount of C deposited prior to the growth of the Ge islands strongly effects the diameter and height of the dots. Increasing the C coverage to 0.3 monolayer leads to the formation of comparably compact islands. Consequently, the photoluminescence of the dots is shifted to lower energies compared to dots grown with lower C coverages. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 994-996 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of submonolayer coverages of C on Si(100) prior to Ge growth leads to the formation of Ge quantum dots below the critical thickness for Ge islanding on bare Si(100). In situ scanning tunneling microscopy reveals a high density of irregularly shaped islands for Ge coverages from 2.5 to 4 ML. Island sizes are broadly distributed between 10 and 25 nm. Keeping the C coverage constant and increasing the Ge coverage from 2.5 to 4 ML, the islands increase in height but their density remains constant (∼1011 cm−2). At a Ge coverage of 5.8 ML, formation of larger (105)-faceted islands is observed. Their density is reduced by a factor of 4 compared to smaller Ge coverages. Transmission electron microscopy shows that the nonfaceted islands are preserved after Si capping. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1742-1744 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy is used to study C and Ge diffusion in multilayers of C-induced Ge dots deposited on Si(100). The initial Ge content is fixed to 2 ML and the C precoverage varied from 0.1 to 0.3 ML. The resulting concentration of isolated substitutional C atoms depends on the C precoverage and the thermal annealing performed after growth. C atoms are mostly localized in the areas around the dots, due to the repulsive Ge–C interaction. When C is added, the interface around the burried dots becomes sharper, and less Ge alloying occurs. C mainly increases the strain contrast around the dots and induces a strain-enhanced Ge interdiffusion, even at 650 °C. At 800 °C, Ge and C interdiffuse simultaneously. © 2001 American Institute of Physics.
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