ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (4)
Collection
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    Reaction of iron and silicon during ion implantation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4848-4851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using energy-loss spectroscopy, energy dispersive x-ray analysis, electron diffraction, and He+-ion channeling the reaction of Fe during implantation into Si(111) has been investigated at various target temperatures and implantation doses. In samples implanted at 275 °C with 2.8×1017 Fe+ cm−2 a continuous α-FeSi2 layer accompanied by α-phase precipitates is formed. At 450 °C Fe agglomerates mostly in α-phase precipitates with only a few being β-FeSi2. At 350 °C 1×1017 Fe+ cm−2 produce precipitates electronically close to FeSi2 but crystallographically poorly defined. At 4×1017 Fe+ cm−2 a β-FeSi2 layer is formed at the surface and a 20-nm-thick α-FeSi2 one followed by α-FeSi2 precipitates deeper in the volume. Channeling reveals a minimum yield decreasing with dose indicating improved α-phase crystal quality. A sharp increase at 3.3×1017 cm−2 indicates an α–β phase transition. FeSi has not been detected. Precipitates of well defined silicide phases are formed already during implantation. Dose and temperature have a profound influence on the phase formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353800
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Structural properties of ion-beam-synthesized β-FeSi2 in Si(111) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3788-3794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A continuous buried β-FeSi2 layer was obtained by implantation of 200 keV Fe+ ions into Si(111) wafers at elevated temperature. During the subsequent rapid thermal annealing at 1150 °C for 10-s, a continuous buried layer of the metallic α-FeSi2 phase is formed. During the second annealing step at 800 °C, the α phase is completely transformed into the semiconducting β phase. The epitaxial relationship between the β-FeSi2 and the silicon substrate was investigated by transmission electron microscopy. It was found that the β-FeSi2(010) plane grows parallel to the Si(111) substrate. Two different azimuthal orientations were observed. For the first azimuthal orientation, the β-FeSi2[001] direction is oriented almost parallel to one of the three Si〈110〉 directions lying in the interface. In the second azimuthal orientation, the β-FeSi2[100] direction lies parallel to one of the Si〈110〉 directions in the interface. The lattice parameter mismatch and the growth mechanism must be considered to be the main reasons for the epitaxial relationship of the Si(111)/β-FeSi2/Si(111) heterostructures studied in this investigation. The orientation of the β-phase is likely to be predetermined by the orientation of the α-phase which is formed during the first annealing step. Different orientation relationships were observed for β-FeSi2 prepared by solid phase epitaxy and ion beam synthesis without high-temperature annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350891
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Optical and structural investigation of SiGe/Si quantum wells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2183-2185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report photoluminescence and structural results obtained on asymmetrically strained Si0.7Ge0.3/Si single and multiple quantum wells epitaxially grown by low pressure chemical vapor deposition. Well-resolved peaks were obtained which can be attributed to quantum well excitons and their transversal optical phonon replica. A good correlation between peak properties and structure results was found. From the photoluminescence peak energies a valence band offset of 0.27 eV and an effective hole mass of 0.25 were estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107073
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Ion beam synthesis of buried α-FeSi2 and β-FeSi2 layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2145-2147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high dose implantation of Fe+ into (111)Si, followed by rapid thermal annealing (RTA) at 1150 °C for 10 s, we fabricated continuous buried layers of the metallic α-FeSi2 phase. Rutherford backscattering experiments indicate that these layers contain a large number of Fe vacancies, up to 18%. By implanting through a SiO2 mask, we produced Schottky diodes with idealty factors of 1.4±0.1 and a Schottky barrier height of ΦB=0.84±0.03 eV on (111) n-Si. In this letter we report for the first time the formation of the semiconducting stoichiometric FeSi2 (β-FeSi2) phase by annealing the buried α-FeSi2 layers below the phase transition temperature of 937 °C; specifically at 750 °C for 20 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106107
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...