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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 805-811 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a comparative study on the ultrafast nonlinear optical response of a novel conjugated zinc porphyrin system. The linear optical absorption spectra of these molecules all show the Q-band and B-band transitions of the basic porphyrin unit. We have taken spectrally resolved ultrafast pump–probe measurements on monomer, dimer, and polymer solutions, which allows us to compare their excited state dynamics and relate these to their linear optical absorption. The spectra show several common features, but these features have markedly different decay dynamics. The bleaching is preferential in the Q band for the polymer and the B band for the monomer. The polymer Q-band bleaching shows a two-component decay, of approximately 700 fs and 170±50 ps time constants in a biexponential fit, which we attribute to both exciton–exciton annihilation and exciton diffusion to recombination centers on the polymer chain. The Q band of the dimer also has a two-component decay with 13±5 and 1250±70 ps time constants which we attribute to rotational diffusion of the excited molecule in solution, and decay to the ground state, respectively. The B-band bleaching in the monomer is long lived and has a decay constant of approximately 3.5±0.5 ns; from the absorption recovery of the B band we estimate a triplet yield of 0.8. All molecules exhibit broad π*−π* absorptions in the visible spectral region (between the Q band and the B band). In particular, we show that the monomer has potential as a broadband optical limiter in the visible region from 455 (2.72 eV) to 620 nm (2.00 eV); we estimate that its excited state absorption cross section is 8.5 times that of its ground state cross section at 532 nm (2.33 eV). There is also clear evidence of triplet transitions in the dimer and monomer; the triplet absorption feature ranging from 940 (1.32 eV) to 1000 nm (1.24 eV) rises 10 ps after excitation in the dimer which suggests a short intersystem-crossing time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 560-562 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology of plasma polymerized methyl methacrylate films was investigated using atomic force microscopy. It was found that the plasma polymer surfaces consist of nanometer scale growth columns. The average grain size of the growth columns increases with deposition time. For the same deposition time, the average grain size is proportional to pressure and deposition power. It was deduced that microscopic properties of plasma polymers are not uniform through the bulk of the plasma polymer films even though the external deposition parameters are held constant.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2313-2321 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature measurements of linear and nonlinear photoconductivity in CaF2 containing trace amounts of yttrium, lanthanum, and several rare earths are reported and discussed. Linear spectral photoconductivity scans taken over the 1.55- to 6.20-eV range of photon energies produced significant photocurrents above 3 eV. The results are explained in terms of a combination of 4f-5d absorption in Ce+3 and Pr+3 and photoionization of interstitial F− in both nearest-neighbor charge-compensating defects and anion-Frenkel defects. Peak photocurrents induced by focused 950-ns-wide pulses from a 496.5-nm wavelength dye laser increased nonlinearly with increasing laser pulse energy. These results are interpreted as a transition from two-photon conductivity to electron avalanche and the asymptotic approach to the material's laser damage threshold at approximately 27 GW/cm2.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 3861-3863 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency magnetohydrodynamic equations including the effects of finite ion Larmor radius are derived. These equations contain all the physical terms necessary to describe kinetic Alfvén waves. Among other applications, these waves are used to interpret ultra-low-frequency wave phenomena in the Earth's magnetosphere. The finite ion Larmor radius effects are usually disregarded; however, under magnetospheric conditions, the ion temperature cannot be considered negligible since Ti≥Te. The finite ion gyroradius is accounted for by the ion stress tensor calculated in this Brief Communication. The nonlinear one-fluid system of equations is shown to adequately describe linear kinetic Alfvén waves in a low-β(β(very-much-less-than)1) homogeneous plasma. It is demonstrated that energy of the plasma system is conserved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 1676-1683 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ions of the terrestrial magnetosheath are typically observed to have bi-Maxwellian velocity distributions with T⊥(approximately-greater-than)T(parallel), where ⊥ and (parallel) denote directions perpendicular and parallel to the background magnetic field. Observations of the highly compressed magnetosheath have demonstrated an inverse correlation between the proton temperature anisotropy and the proton parallel β. Hybrid computer simulations have shown that wave–particle scattering by the proton cyclotron anisotropy instability can yield similar correlations between these two parameters. Although these correlations are due to nonlinear plasma processes, they correspond to a threshold of this instability that can be determined from linear Vlasov theory. This proton anisotropy/β correlation represents a limited closure relation for anisotropic magnetohydrodynamic plasma models.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 1448-1451 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistive magnetohydrodynamic (MHD) simulations of sawtooth activity in tokamaks are presented. An m=1 convection cell driven by the resistivity gradient forms in the center of the column and causes the sawteeth to die away. The nonlinear properties of this convection cell are calculated analytically. Periodic sawteeth are obtained when the parallel thermal conduction is sufficiently large.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 2119-2128 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple model of the crash phase of sawteeth in tokamaks is presented, which explains many of the significant experimental observations: small oscillations in the electron temperature prior to the crash (precursor), a short crash time, and large long-lived oscillations in the electron temperature following the crash (successor). In tokamak discharges with good central confinement the temperature profile across the center of the discharge remains rather flat. In such profiles skin currents form that cause the safety factor q to fall below one at a finite radius rs while q(r=0)(approximately-equal-to)1. The sawtooth crash is caused by the m=n=1 tearing mode growing on such a profile. For a profile in which q falls below one by an amount Δq, the crash time is given by the helical Alfvén time τA/Δq, independent of the resisitivity. The size of the magnetic island of the precursor can be a small fraction of rs. In contrast, a remnant magnetic island of the order of rs survives the crash and causes the successor oscillation. Estimates of the decay time of the successor are given.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1969-1970 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Simple techniques are described for construction of a discharge channel, and spark gap trigger electrode for a traveling-wave excited molecular hydrogen laser.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 420-426 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) were characterized. A simple method was demonstrated for the fabrication of fully depleted thin-film SOI MOSFETs with a single stacking fault in their channel region. SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. The influence of a single stacking fault on device I–V characteristics was determined and compared to that of nearby identical devices without stacking faults. Off-state leakage currents, a threshold voltage shift, and drive current lowering were observed for devices with a single stacking fault in their channel region. Based on the location of the single stacking fault relative to the device channel region, various physical models were proposed to explain the phenomena observed. © 2002 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4034-4036 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unique and simple method is demonstrated for characterizing the electrical behavior of a single stacking fault in thin-film fully depleted silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs). SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. P-channel MOSFETs, with the presence of a single stacking fault entirely in the channel region, were measured. The influence of a single stacking fault on device current–voltage characteristics was determined and compared to that of nearby identical devices without stacking faults. It was found that the threshold voltage increased and saturation current decreased, but had low subthreshold leakages. P-channel MOSFETs, with a single stacking fault crossing the gate and penetrating into the source and drain, had high subthreshold leakage currents. © 2000 American Institute of Physics.
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