ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 °C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99362
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