Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 148-150
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated exciton localization in Zn1−xCdxSe/ZnSe quantum wells by microprobe, spatially resolved luminescence. We found that compositional fluctuations in Cd-rich (x=0.23) quantum wells induce the formation of a tail of states in the gap, where a continuum of localized exciton states forms. On the other hand, shallow quantum wells (x=0.11) exhibit sharp lines due to excitons localized at monolayer well-width fluctuations extending over a few hundred nanometers. The observed results are consistent with the occurrence of localized exciton lasing in deep ZnCdSe quantum wells. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121738
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