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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 1142-1152 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper uses the theory of atoms in molecules to investigate the origin of molecular dipole moments. The dipole moment is given by a sum over the net charge and first moment of every atom in a molecule. The first term leads to a charge transfer contribution μc, the second to an atomic polarization contribution μa. It is shown that both terms are, in general, of equal importance in determining both the static molecular dipole moment and the moment induced by a nuclear displacement. Models which imploy only point charges and corresponding bond moments which follow rigidly the nuclear framework, i.e., models which approximate μc and ignore μa, are shown to lead to results that are incompatible with the changes that are found to occur in a molecular charge distribution during a nuclear vibration. The dipole moment is shown to be another group property that is transferable between molecules in the normal hydrocarbons, This property, along with the net charge, the energy, the correlation energy (expressed as a functional of the charge density), and the atomic volumes are transferable for methyl and methylene groups because of a corresponding transferability of the distribution of charge over the basins of the atoms in these groups up to their surfaces of zero flux in the gradient vector of the charge density. Transferability of group properties is not a result of the transferability of individual orbitals or geminals, which necessarily have tails lying outside of the group in question. Atoms have no tails and their energy, as is known from experiment, can in certain instances be transferred between systems with changes of less than 1 kcal/mol. The properties of atoms in molecules can be determined experimentally and quantum mechanics predicts these properties, just as it predicts the properties of a total system.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6616-6625 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an integrated device fabrication sequence for GaAs/AlGaAs resonant tunneling diodes and the results of dc and microwave characterization of the integrated devices. The development of an integrated structure represents a first step toward monolithic or hybrid integration for applications such as oscillators in the 100 GHz–1 THz range. The use of a proton implant in addition to a mesa etch for device isolation allows low parasitic capacitance connections to bond pads, interconnects, or radiating elements. The dc and microwave measurement procedures and an equivalent circuit topology for the integrated device are described. Several features associated with the integrated geometry, including a decrease in peak current density with increasing device diameter, are observed in a study of the current-voltage characteristics of devices with various diameters. Contact resistances are determined from a physically based model and compared with experimental results. Microwave characterization techniques are used to obtain microwave equivalent circuit parameters for the integrated diodes. Device capacitance and conductance are presented as functions of device dimension and bias voltage. Parasitic circuit elements, including series resistance and a capacitance and resistance associated with the proton bombardment used to define the mesa, are also determined from the microwave analysis. The results obtained from microwave impedance measurements are compared with parameters obtained from dc characterization and numerical simulations of comparable device structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1962-1967 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hollow-sphere model, with temperature-dependent viscoplastic material response, is used to investigate thermal effects in shock compaction of metal powders. Model calculations show very good agreement with experimental shock rise times only if the temperature dependence is considered. The results also suggest that the dynamic compaction may be qualitatively different depending on whether viscoplastic or inertial effects dominate the pore collapse process.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3695-3697 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we show the ability, through introduction of a thin Si1−x−yGexCy layer, to eliminate the enhancement of enhanced boron diffusion in silicon due to an oxidizing surface or ion implant damage. This reduction of diffusion is accomplished through a low-temperature-grown thin epitaxial Si1−x−yGexCy layer which completely filters out excess interstitials introduced by oxidation or ion implant damage. We also quantify the oxidation-enhanced diffusion (OED) and transient-enhanced diffusion (TED) dependence on substitutional carbon level, and further report both the observation of carbon TED and OED, and its dependence on carbon levels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1225-1227 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The empirical reaction of substitutional carbon with silicon self-interstitials in Si0.998C0.002 layers pseudomorphically grown on Si (100) substrates has been quantified at 850 °C. During annealing of a sample with a thin Si0.998C0.002 layer capped with a thin crystalline silicon layer, in either oxygen or nitrogen ambient, carbon diffuses from the surface edge of the Si0.998C0.002 layer towards and out of the silicon surface. The extra number of carbon atoms lost during oxidation is found equal to the number of silicon interstitials injected by the oxidation process, strongly suggesting that each substitutional carbon reacts with a single self-interstitial to form a mobile interstitial carbon, whereby it diffuses to the surface. The mechanism appears the same in Si1−x−yGexCy and Si1−xCx films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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