ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 6585-6593 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new method which should have relatively general applicability for the identification and quantitative analysis of reactive adsorbed molecular intermediates in surface reactions will be described, and the first examples of its application will be presented. When a reactive intermediate is generated on a surface, it often has a tendency to dissociate before desorbing. Since dissociation generally requires additional free sites on the surface, dissociation can be suppressed and desorption correspondingly enhanced if the free sites on the surface can be properly poisoned. We have found that bismuth adatoms are very good inert site blockers, which can be postdosed to the surface of a transition metal containing a reactive adsorbed hydrocarbon without destroying the hydrocarbon. Whereas in the absence of bismuth, the hydrocarbon would completely dehydrogenate during thermal desorption spectroscopy (TDS) and liberate only H2 into the gas phase, after bismuth postdosing the reactive hydrocarbon desorbs intact for mass spectral identification and quantitative analysis. This method has been used to prove that adsorbed benzene is the initial product of the dehydrogenation of cyclohexane on Pt(111) at ∼235 K. In the absence of bismuth, this benzene all dissociates during TDS to liberate only H2, leaving graphitic carbon residue on the surface. When one-third monolayer of Bi is postdosed at 110 K, the dehydrogenation pathway is sterically poisoned and the adsorbed benzene quantitatively desorbs during TDS, where it is unambiguously identified by mass spectroscopy. By briefly heating the reactive adsorbed intermediate to increasing temperatures prior to Bi deposition, the thermal stability limits of the intermediate and the kinetic parameters for its dissociation can be established. This is demonstrated for the dehydrogenation reaction of adsorbed cyclopentene on Pt(111). Bismuth postdosing in thermal desorption mass spectroscopy (BPTDS) should be a very useful but inexpensive addition to surface analytical capabilities.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2031-2035 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have investigated the use of frequency variation in ac calorimetry in the measurement of thermal quantities within controllable distances of the sample heater and thermometer. This technique, useful in studies of heterogeneous samples where only a small part of the sample is of interest, e.g., surfaces, thin films, and interfaces, is applied to study the thermal properties of a test sample made from indium (In) sandwiched between layers of bulk gallium arsenide. We measure and analyze the frequency dependence of the thermal response of the sample, as well as the variation with frequency of the relative size of the anomaly observed at the In superconducting transition. The data are consistent with a model assuming a thermal diffusion-limited sampling volume.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 783-784 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low excess noise in avalanche photodetectors (APDs) is desired for improved sensitivity and high-frequency performance. Gain and noise characteristics are measured for InAlAs p-i-n homojunction APDs that were grown with varying i-region widths on InP by molecular beam epitaxy. The effective ionization ratio k (β/α) determined by noise measurements shows a dependence on multiplication region width, reducing from 0.31 to 0.18 for multiplication region thicknesses of 1600–200 nm. This trend follows previously shown results in AlGaAs-based APDs, which exhibit reduced excess noise due to nonlocal multiplication effects. These results show that this effect is a characteristic of thin avalanche regions and is not a material-specific phenomenon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3816-3817 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) of porous Si that has been hydrogenated in boiling water has been investigated. The PL intensity is observed to increase with a concurrent shift of the spectral peak to shorter wavelengths. These effects can be explained in terms of size effects in the microstructures of porous Si. The spectral changes after annealing and after rehydrogenation are similar to the behavior of a-Si:H. We conclude that hydrogen plays an important role in the luminescence of porous Si.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 542-544 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the current transport mechanisms dominant at the Schottky interface of metal–semiconductor–metal photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness. We have modeled transport in the 1.5 μm devices using thermionic emission theory, and in the 4.0 μm devices using thermionic field emission theory. We have obtained a good fit to the experimental data. We hypothesize that traps in the GaN are related to a combination of surface defects (possibly threading dislocations), and deep-level bulk states that are within a tunneling distance of the interface. A simple qualitative model is presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8204-8205 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new electrically tunable photodetector is described. Wavelength tunability has been achieved by utilizing the quantum confined Stark effect in a low-Q vertical cavity to shape the exciton absorption characteristic. The absorption peak has been tuned approximately 17 nm with a bias of 8 V. Results are compared with theoretical calculations. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6148-6160 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the material, electrical, and optical properties of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness. We have modeled current transport in the 1.5 μm devices using thermionic field emission theory, and in the 4.0 μm devices using thermionic emission theory. We have obtained a good fit to the experimental data. Upon repeated field stressing of the 1.5 μm devices, there is a degradation in the current–voltage (I–V) characteristics that is trap related. We hypothesize that traps in the GaN are related to a combination of surface defects (possibly threading dislocations), and deep-level bulk states that are within a tunneling distance of the interface. A simple qualitative model is presented based on experimental results. For devices fabricated on wafers with very low background free electron concentrations, there is a characteristic "punch-through" voltage, which we attribute to the interaction of the depletion region with the underlying low-temperature buffer layer. We also report GaN metal–semiconductor–metal photodetectors with high quantum efficiencies (∼50%) in the absence of internal gain. These photodetectors have a flat responsivity above the band gap (measured at ∼0.15 A/W) with a sharp, visible-blind cutoff at the band edge. There is no discernible responsivity for photons below the band-gap energy. We also obtained record low dark current of ∼800 fA at −10 V reverse bias. The dark current and ultraviolet photoresponse I–V curves are very flat out to VR〉−25 V, and do not show evidence of trap-related degradation, or punch-through effects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3641-3644 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results from an investigation of the effects of variations in layer thicknesses during the growth of semiconductor Bragg mirrors on their reflectivity spectra. Different types of variations are investigated and an effort is made to point out the sources of such errors in a typical growth process. It is expected that this study will shed light on the critical control parameters for very highly reflecting mirrors and help the interpretation of the measured spectra from a finished growth run and the identification of the possible sources of deviations from the ideal structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5343-5347 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photodiodes with thin (∼0.2 μm) InGaAs light absorbing layers placed inside much wider (∼2 μm)InP depletion regions were studied to understand the interaction of hole trapping at the InGaAs/InP heterojunction interface and carrier transit effects. In the three devices studied, the absorbing region was located (i) near the n+ side, (ii) in the center, and (iii) near the p+ side of the depletion region. The optical impulse response of these devices consists of a short pulse and a long exponential tail with a bias-dependent time constant. The relative charge in the fast and slow components could be measured and it was shown that the charge ratios correspond to the fraction of the depletion region transited before and after trapping. These studies show that electron trapping times are much shorter than hole trapping times, and that fast photodetection can occur even in the presence of a severe hole trapping problem if the distance between the trap and the p+ side of the depletion region is much smaller than the total depletion width.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 8379-8384 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The high resolution infrared emission spectra of gallium hydride and gallium deuteride have been recorded with a Fourier transform spectrometer. There were 1045 lines observed including those from the v=1→0 to v=7→6 bands for the 69GaD and 71GaD species and v=1→0 to v=4→3 bands for the 69GaH and 71GaH species. Dunham Yij's for each isotopomer were obtained by fitting the data set of each isotopomer separately to the Dunham energy levels of the X 1Σ+ electronic ground state. The mass-reduced Dunham Uij's were determined using two independent methods. In the first fit the Uij's constants were determined by the traditional method where all the constants were treated as adjustable parameters and determined statistically. In the second fit the Uij's which satisfied the condition j〈2 were treated as adjustable parameters and the remaining constants were fixed by constraints imposed by the Dunham model. In order to predict the positions of transitions with v's and J's much higher than those observed the entire data set was fit directly to the eigenvalues of the Schrödinger equation containing a parameterized internuclear potential energy function.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...