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  • 1
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    Antiferromagnetic ordering in spin-chain multiferroic Gd2BaNiO5 studied by electronic spin resonance (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-06-10
    Description: High-field electron spin resonance (ESR) has been employed to study the antiferromagnetic (AFM) ordering state ( T  
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Bi2Sr2CaCu2O8 intrinsic Josephson junction stacks with improved cooling: Coherent emission above 1 THz (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-26
    Description: We report on Bi 2 Sr 2 CaCu 2 O 8 (BSCCO) intrinsic Josephson junction stacks with improved cooling, allowing for a remarkable increase in emission frequency compared to the previous designs. We started with a BSCCO stack embedded between two gold layers. When mounted in the standard way to a single substrate, the stack emits in the range of 0.43–0.82 THz. We then glued a second, thermally anchored substrate onto the sample surface. The maximum voltage of this better cooled and dimension-unchanged sample was increased and, accordingly, both the emission frequencies and the tunable frequency range were significantly increased up to 1.05 THz and to 0.71 THz, respectively. This double sided cooling may also be useful for other “hot” devices, e.g., quantum cascade lasers.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    A power-adjustable superconducting terahertz source utilizing electrical triggering phase transitions in vanadium dioxide (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-12-06
    Description: We report a practical superconducting terahertz (THz) source, comprising a stack of Bi 2 Sr 2 CaCu 2 O 8 intrinsic Josephson junctions (IJJs) and a vanadium dioxide (VO 2 ) tunable attenuator with coplanar interdigital contacts. The electrical triggering phase transitions are observed not only at room temperature, but also at low temperatures, which provides a proof of the electrical triggering. Applying this, the VO 2 attenuator is implemented for the independent regulations on the emission powers from the IJJ THz emitter, remaining frequencies and temperatures unchanged. The attenuation can be tuned smoothly and continuously within a couple of volts among which the maximum is, respectively, −5.6 dB at 20 K or −4.3 dB at 25 K. Such a power-adjustable radiation source, including the VO 2 attenuator, can further expand its practicability in cryogenic THz systems, like superconducting THz spectrometers.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
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    Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-11-19
    Description: It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
    Electronic Resource
    Electronic Resource
    Hard sphere treatment of binary diffusion in liquid at high dilution up to the critical temperature (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 2052-2055 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Binary diffusion coefficients at high dilution are measured for ethane and ethylene dissolved in cyclohexane at temperatures from 280.5 to 363.2 K and for benzene in cyclohexane and n-hexane up to their critical temperatures. With the effective hard-sphere diameters backed out from self-diffusion data from both solute and solvent molecules and fitted to Protopapas, Anderson, and Parlee's formula, the prediction with the Sung–Stell theory is found to agree to within ±7% of experimental data for wide ranges of solute-to-solvent mass and size ratios at temperatures up to the critical point.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448390
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  • 6
    Electronic Resource
    Electronic Resource
    Bond contraction and lone pair interaction at nitride surfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2615-2617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that bond contraction and nonbonding lone-pair interaction dominate at nitride surfaces. The maximum elastic recovery of a nitride surface was found to be 100% under a relatively lower nanoindentation load (〈1.0 mN) and the hardness of the surface was found to be 100% higher than the bulk value. It is interpreted that the spontaneous bond contraction, estimated at 12%–14%, strengthens the binding energy and hence the hardness and Young's modulus at the surface. The lone-pair weak interaction claims the responsibility for (i) the high elastic recovery, (ii) the lower Raman frequencies of vibration, and (iii) the existence of critical loads for slide friction or lone-pair broken. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390305
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of capacitive modulation of bipolar current in crystalline silicon gated p-i-n structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1875-1877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report, for the first time, the experimental observation of capacitive modulation of bipolar current in crystalline silicon devices consisting of a lateral p-i-n channel and an insulated polycrystalline silicon gate. Modulation characteristics of devices with different channel lengths are compared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101265
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  • 8
    Electronic Resource
    Electronic Resource
    Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362448
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  • 9
    Electronic Resource
    Electronic Resource
    A new nucleation method by electron cyclotron resonance enhanced microwave plasma chemical vapor deposition for deposition of (001)-oriented diamond films (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 4616-4618 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new nucleation method, which is different from bias-enhanced nucleation, was employed for the preparation of (001)-oriented diamond films on untreated, mirror-polished silicon substrates. The nucleation was realized in an electron cyclotron resonance enhanced microwave plasma at a pressure of about 10−3 Torr which was 4 orders of magnitude lower than that normally used for bias-enhanced nucleation (∼tens Torr). Scanning electron microscopy and Raman spectroscopy were used to investigate the surface morphology and phase purity of the deposited diamond films. The new findings may provide us a route to further understand the nucleation mechanism of diamond films by chemical vapor deposition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478343
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  • 10
    Electronic Resource
    Electronic Resource
    Theoretical study on potential-energy surface of C2N2 (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 2024-2027 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: B3LYP and CCSD(T) (single-point) calculations are performed on structures and interconversion transition states for five C2N2 isomers, i.e., the linear structures NCCN 1, CNCN 2, CNNC 3, and CCNN 4, and the NNC three-membered ring structure with exocyclic C–C bonding 5. A schematic potential-energy surface of the five C2N2 isomers is established. It is shown that the elusive and long searched for isomer 3 lies in a deep potential well against isomerization to the well-studied isomers 1 and 2, while the two transition states, which have been predicted to connect the isomers 1 and 3, are actually associated with the interexchange of the two cyano groups in isomer 2. It is also shown that the experimentally unknown but expectedly important isomer 4 may take an isomerization pathway to the isomer 1 via the intermediate 5, and the isomer 4 also lies in a deep potential well. Both the isomers 3 and 4 may be thermally as stable as the isomer 2. The results presented in this paper may provide useful information for the identification of the two isomers 3 and 4. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475581
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