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  • 1
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    A new method to induce molecular low bias negative differential resistance with multi-peaks (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-02-10
    Description: According to a first-principles study of the transport properties of two thiolated anthracene-9,10-diono molecules sandwiching ethyl, a new method to induce molecular low bias negative differential resistance with multi-peaks for strong n - or p -type molecules is proposed. The anthracene-9,10-diono molecule shows strong n -type characteristics when in contact with Au and Ag electrodes via a thiolate. The multiple negative differential resistance effect originated from the molecule–electrode couple is different between Ag and Au electrodes. Our investigations may promise potential for applications in molecular devices with low power dissipation and multifunction in the future.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
    Published by American Institute of Physics (AIP)
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray reflectivity studies of the effect of surfactant on the growth of GeSi superlattices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1681-1684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reflectivity is applied to investigate the effect of a surfactant on the growth of Ge1−xSix/Si superlattices. It is demonstrated that the antimony layer deposited on the surface can effectively prevent the intermixing of silicon and germanium. The specular reflectivity curves show that the width of the interface is sufficiently reduced by the surfactant. The transverse scans show that the interface roughening exponent h for the sample with surfactant is larger than for the sample without surfactant, and the in-plane correlation length for the former is much larger than for the latter. This indicates that the surfactant makes less jagged and smoother interfaces and induces a different surface growth mode. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360264
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  • 3
    Electronic Resource
    Electronic Resource
    Platinum-induced morphology and reactivity changes on W(111) (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 9172-9181 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The structure and CO chemisorption properties of a model bimetallic system Pt on W(111) have been studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED), scanning tunneling microscopy (STM), and thermal desorption spectroscopy (TDS). The results reveal that upon annealing, the Pt/W(111) system undergoes a variety of structural transformations, with the most striking being the reconstruction of the W(111) substrate to form pyramidal facets with {211} orientations. The presence or absence of facets, and size distribution of the facets, are sensitive functions of Pt coverage and annealing temperature. LEED results for faceted surfaces annealed to different temperatures correlate well with the STM data. CO has been used as a probe molecule to examine the chemisorption properties of the different structural phases. Increasing Pt coverage causes site blocking that results in reduced dissociative adsorption of CO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465532
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  • 4
    Electronic Resource
    Electronic Resource
    Valence state of CeAl2 nanoparticles studied by Ce L3-edge x-ray absorption spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3349-3350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the Ce L3-edge x-ray absorption near-edge structure on CeAl2 nanoparticles with average diameters of 80 Å. The Ce exhibits a mixed valence with a small amount of tetravalent Ce, which is in contrast to the purely trivalent Ce observed in bulk CeAl2. A shift in the absorption edge to higher energy and a narrower linewidth are also observed in the nanoparticle samples. These spectral differences are attributed to surface effects caused by the small particle size, including a lower coordination number and higher surface pressure. The observation of nonmagnetic tetravalent Ce with the 4f0 configuration is in good agreement with the small values of magnetic entropy seen in low temperature specific heat measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372347
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  • 5
    Electronic Resource
    Electronic Resource
    Tl-Ba-Ca-Cu-O superconducting thin films with postdeposition processing using Tl-containing thin films as Tl source : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6495-6497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new method of processing Tl-Ba-Ca-Cu-O (TBCCO) superconducting thin films. In this method, two identical elemental multilayer films containing Tl layers were prepared using an electron-beam deposition technique. The thin-film samples were then placed in face-to-face contact in a quartz crucible and heat treated at 740 °C for 10 min in flowing air. The x-ray microanalysis of the bottom sample indicates promising results for obtaining the desired chemical composition. Random characterization from different sections of the sample showed that the microanalysis values had less scatter than those for samples prepared using the usual bulk postdeposition method. The average chemical composition of the 13 points obtained from the random section is Tl1.8Ba1.8Ca1.9Cu2.0Ox. However, oxygen analysis showed that the concentration of oxygen is low and poorly distributed, presumeably attributable to the low oxygen flow. This method has several advantages over the conventional Tl-O vapor processing using pure metallic thallium, thallium oxide or bulk TBCCO. These advantages include: (a) increase in uniformity of thallium deposition, (b) safer processing as a result of a smaller release of thallium, and (c) reduction of processing cost.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349886
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  • 6
    Electronic Resource
    Electronic Resource
    Ion beam syntheses and microstructure studies of a new FeSi2 phase (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3306-3309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron-silicide has been formed by ion implantation of iron into silicon (111). In the as-implanted sample, a new type of orthorhombic FeSi2 phase was found. Although the lattice parameters of the new phase are the same as those of the known semiconductor β-FeSi2, its point group and space group were different and determined to be mmm and Pbca, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363240
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  • 7
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    Spiral growth of few-layer MoS2 by chemical vapor deposition (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-08-06
    Description: Growth spirals exhibit appealing properties due to a preferred layer stacking and lack of inversion symmetry. Here, we report spiral growth of MoS 2 during chemical vapor deposition on SiO 2 /Si and epitaxial graphene/SiC substrates, and their physical and electronic properties. We determine the layer-dependence of the MoS 2 bandgap, ranging from 2.4 eV for the monolayer to a constant of 1.3 eV beyond the fifth layer. We further observe that spirals predominantly initiate at the step edges of the SiC substrate, based on which we propose a growth mechanism driven by screw dislocation created by the coalescence of two growth fronts at steps.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Structural and relaxor-like dielectric properties of unfilled tungsten bronzes Ba5−5xSm5xTi5xNb10−5xO30 (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-03-29
    Description: New unfilled tetragonal tungsten bronze (TTB) oxides, Ba 5−5x Sm 5x Ti 5x Nb 10−5x O 30 (BSTN-x), where 0.10 ≤ x ≤ 0.35, have been synthesized in this work. Their crystal structure was determined and analyzed based on Rietveld structural refinement. It is found that single TTB phase can be formed in a particular x range (i.e., 0.15 ≤ x ≤ 0.3) due to the competition interaction between tolerance factor and electronegativity difference. Furthermore, dielectric and ferroelectric results indicate that phase transitions and ferroelectric states are sensitive to x. Referring to the local chemistry, we suggest that the raise of vacancies at the A 2 -site compared with that of A 1 -site will intensely depress the normal ferroelectric phase and is in favor of relaxor ferroelectric state. Macroscopically, previous A-site size difference standpoint on fill TTB compounds cannot give a reasonable explanation about the variation of dielectric maximum temperature (T m ) for present BSTN-x compounds. Alternatively, tetragonality (c/a) is adopted which can well describe the variation of T m in whole x range. In addition, one by one correspondence between tetragonality and electrical features can be found, and the compositions involving high c/a are usually stabilized in normal ferroelectric phase. It is believed that c/a is a more appropriate parameter to illustrate the variation of ferroelectric properties for unfilled TTB system.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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