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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1734-1736 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultrafast relaxation dynamics of split-off holes in GaAs are studied using a time-resolved two-wavelength excitation luminescence technique. Following valence-to-conduction-band transitions that are excited by near-infrared femtosecond pulses, delayed midinfrared femtosecond pulses are used to promote holes from the heavy-hole band to the split-off-hole band. The subsequent conduction-to-split-off-hole luminescence indicates that the room-temperature lifetime of split-off holes in GaAs is approximately 50 fs. The accompanying changes in conduction-to-heavy-hole-and-light-hole luminescence when holes are transferred to the split-off band are also observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3341-3343 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-repetition-rate, femtosecond optical parametric oscillator based on bulk periodically poled lithium niobate is described. This optical parametric oscillator is continuously tunable from 1.12 to 1.50 μm in the signal branch, and signal pulses as short as 60 fs have been observed. The corresponding turning range for the idler branch is from 1.68 to 2.72 μm. Modifications which should result in a femtosecond optical parametric oscillator with a pumping threshold of less than 50 mW are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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