ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (10)
  • 1
    Electronic Resource
    Electronic Resource
    Apparatus for thin-film stress measurement with integrated four-point bending equipment: Performance and results on Cu films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4479-4482 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: New insight into the mechanical behavior of thin metallic films on substrates can be obtained by a novel experimental technique. It comprises stress measurements by the wafer curvature technique in combination with a four-point bending of beam-shaped samples. A dedicated apparatus was constructed which allows such experiments in high vacuum between room temperature and 500 °C to be carried out. It has a stress measurement sensitivity better than 0.1 MPa and a long-term stability better than ±0.2 MPa over 24 h in the case of a 1 μm thick film. Strains up to 0.8% could be imposed by a four-point bending on films grown on 380 μm thick Si substrates before cracking of the substrates. Both the thermal cycling and the four-point bending technique were used to investigate the plastic behavior of 1 μm thick Cu films on oxidized Si substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326925
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Adjustment of temperature coefficient of resistance in NiCr/CuNi(Mn)/NiCr films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8516-8520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin-film system Ni0.37Cr0.63/Cu0.57Ni0.42Mn0.01/Ni0.37Cr0. 63 with a typical thickness of 1 μm is used for low-ohmic precision resistors. The necessary adjustment of the temperature coefficient of resistance (TCR) by annealing has been studied by investigating the irreversible changes of the resistance during various annealing steps of NiCr/CuNi(Mn)/NiCr multilayers in comparison with single layers of CuNi(Mn) and NiCr. Auger depth profiles showed that the interdiffusion of CuNi(Mn) and NiCr results in an impoverishment of Ni in CuNi(Mn), explaining the TCR shift by comparison with data of Cu1−xNix bulk material. The decrease of the resistivity and the reduction of the width of the copper-nickel conductive layer by formation of a Ni0.6Cr0.2Cu0.2 interdiffusion zone phase (in accordance with the Cu-Ni-Cr phase diagram) cause a significant curvature of the resistance-temperature curve. As main result, it is shown that the NiCr base and cover layers and their interdiffusion with CuNi(Mn) play the decisive role in adjusting the TCR. It was checked that oxidation and topography effects have no remarkable influences. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362531
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Apparatus for the laser-optical measurement of stress in thin films: Results on CuNi (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3662-3665 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Dedicated to the investigation of the temperature dependence of mechanical stress in thin films (up to 700 °C in vacuum), a sensitive apparatus has been built up to measure the substrate curvature of a beam-shaped sample by deflection of a splitted laser beam from both ends. The measuring sensivity is about 0.1 MPa for a typical film thickness of 1000 nm. The long-term value over 24 h is about ±0.5 MPa due to ambient-temperature drifts. The determination of absolute stress magnitudes is possible by comparative measurements between the measuring bending beam and a reference one before and after film deposition or film removal. Investigations on sputtered Cu0.57Ni0.42Mn0.01 films have shown that (1) the stress relaxes above 300 °C and remains nearly constant between 430 and 550 °C during the first heating, (2) a hysteresis behavior occurs during the repeated cycles, and (3) the stress at room temperature increases a little with the cycle number. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149155
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Stress, resistance, and phase transitions in NiCr(60 wt %) thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2219-2226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution in both stress and resistance has been investigated on sputtered NiCr(60 wt %) resistive films during annealing (temperature cycles to maximum 700 °C). Aiming at the correlation of stress, resistance, and microstructure, samples from measurements to various maximum temperatures were analyzed by x-ray diffraction and transmission electron microscopy including microanalysis. A series of metastable phases was found with increasing temperature: the as-deposited amorphous phase a, the supersaturated body-centered-cubic (bcc) solid solution αss(Cr) (400 °C), and the tetragonal σ phase (500 °C). This was followed by the equilibrium two-phase alloy bcc α(Cr) plus face-centered-cubic γ(Ni) (600 °C). The phase transitions, characterized by differential scanning calorimetry, were found to be exothermic. The transition a→αss(Cr) results in a distinct tensile-stress component due to material densification. The resistivity is sharply decreasing and the temperature coefficient of resistance is changing from negative to positive values during the a→αss(Cr) transition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372164
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Sensitive measurement of magnetostriction effects in thin films by means of a two-beam free-sample deflection method (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2496-2497 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a setup for the measurement of thin-film magnetostriction λ which utilizes a sensitive laser-optical measurement of the substrate bending in magnetic fields up to 530 kA/m. The sensitivity reaches, e.g., for a 10 nm thick film on a 100 μm thick Si substrate, λ=5×10−8, which corresponds to a total substrate deflection on the order of 0.1 nm. The performance is tested with Co thin films of different thicknesses and annealing states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362436
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Tensile testing of AlCu thin films on polyimide foils (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4922-4929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanical properties of sputtered AlCu(0.5 wt %) thin films, 0.2–2.0 μm thick, were determined by tensile testing. For comparison, tensile tests were also performed on bulk samples of the same composition. The films were deposited on thin polyimide foils. They were characterized with respect to the surface, microstructure, residual stress, and concentration of copper and oxygen. Stress-strain curves of the films were obtained by separating the force working on the polyimide foil from that working on the metal-polyimide compound. Young's modulus of the films almost corresponded to the bulk value. Films with a thickness 〉1.5 μm broke by formation of macrocracks while thinner films showed formation of microcracks. The Hall–Petch model, additional strengthening by small grain size, and the role of grain boundary sliding for crack formation are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371461
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Stress relaxation in CuNi thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3602-3608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress relaxation in sputtered and annealed Cu0.57Ni0.42Mn0.01 thin films has been studied at various temperatures. The microstructure of the films stabilized by a thermal cycle to 550 °C showed twinned grains of the dimension of the film thickness. Below 200 °C, a small low-temperature high-stress plasticity was observed, probably due to obstacle-controlled dislocation glide. Between 300 and 550 °C distinct plasticity was detected. This can be described by two relaxation processes with exponentially decreasing stress towards a final value. The activation energies for the two processes agree (0.4 eV/atom), the deformation rates differ by a factor of 10. We suppose that (i) the slower process is flow by grain-boundary diffusion limited as a result of the attachment of the film onto the substrate and (ii) the faster process is mechanical twinning with diffusional accommodation at the grain boundaries. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369721
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electrical resistance and mechanical stress in NiCr/Cu/NiCr thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 935-940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiCr/Cu/NiCr film configurations are used for metallization of chip resistors. The influence of a heat treatment on the electrical resistance of these films has been investigated ex situ and in situ. This has been correlated with concentration depth profiles determined by Auger electron spectrometry. Up to 450 °C only weak interdiffusion has been found, so that distinct resistance changes occur only for films with small Cu-sublayer thicknesses. The distinction of NiCr/CuNi/NiCr resistor films with characteristic interdiffusion effects is explained on the basis of phase diagram. In comparison to copper films, the temperature dependence of the effective biaxial stress in the NiCr/Cu/NiCr film configuration shows a reduced stress relaxation due to the plastically undeformable NiCr films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369213
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Erratum: "Interdiffusion in NiFe/Cu/NiFe trilayers: Possible failure mechanism for magnetoelectronic devices" [Appl. Phys. Lett. 77, 358 (2000)] (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1064-1064 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290446
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Interdiffusion in NiFe/Cu/NiFe trilayers: Possible failure mechanism for magnetoelectronic devices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 358-360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of electrical resistance, stress, and microstructure during annealing has been studied on 100 nm NiFe(20 wt %)/200 nm Cu/100 nm NiFe trilayers. Irreversible resistance changes and the concentration-depth profiles show that, at and above 200 °C, diffusion of Ni into Cu as well as of Cu into NiFe occurs. The interdiffusion is held for an important failure mechanism of Cu/NiFe-based magnetoelectronic system at elevated temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126975
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...