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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 294-299 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stimulated emissions from both direct and indirect valleys are observed simultaneously in the picosecond time-resolved photoluminescence spectra of the indirect gap semiconductor AlxGa1−xAs, for samples with Al concentrations near (but slightly above) the direct-to-indirect band-gap crossover value. Indirect stimulated emission is possible in this material because the long-wave-vector scattering is enhanced by the near degeneracy of the direct and indirect conduction-band valleys and by alloy scattering. Two distinct bands are observed in the luminescence spectra. One of these we associate with the stimulated indirect recombination of electrons from states in the X valley that are below the Γ band gap and are, therefore, not resonantly coupled to states in the direct valley. The other we associate with the recombination of electrons from the central Γ valley or of electrons from the indirect X valley that are energetically resonant with states in the direct valley. The dramatically different temporal dynamics of these two stimulated processes are determined by the generation, relaxation, accumulation, and recombination of the electron-hole plasma.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3860-3866 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane transport in an InAs/GaAs semiconductor hetero-n-i-p-i has been investigated using picosecond transient grating techniques and an order-of-magnitude enhancement of the ambipolar transport relative to that measured in a similar undoped sample has been demonstrated. Both the magnitude and the density dependence of this enhanced transport are consistent with an additional driving force that is associated with an in-plane modulation of the screened n-i-p-i field. This modulation is the result of the spatial separation by perpendicular transport of electrons and holes that also have an in-plane density modulation.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1868-1873 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-well ambipolar diffusion coefficients and carrier lifetimes in ordered all-binary quantum wells, composed of (InAs)2(GaAs)5 short-period strained-layer superlattices (SPSLSs) grown on [001]-oriented GaAs substrates, are measured using picosecond optically induced transient grating and pump-probe techniques. Quantum wells containing SPSLSs may be expected to exhibit higher in-plane hole mobilities compared to InGaAs ternary alloy quantum wells because of a larger average indium content and reduced disorder scattering in the SPSLS structures. The results obtained in the SPSLSs are compared to those obtained in InGaAs alloy quantum wells of comparable well width and confinement energies. This indicates that, for a given SPSLS and its equivalent alloy, the ambipolar diffusion coefficients are comparable while the carrier lifetimes in the SPSLSs are longer. The longer carrier lifetimes in the SPSLSs suggest that these binary structures possess fewer nonradiative recombination centers than the alloys. The absence of a dramatic improvement in the transport properties, however, may indicate that imperfect interfaces in the SPSLSs may be offsetting their possible advantages, in spite of the fact that optical measurements in the SPSLSs indicate high quality and x-ray and transmission electron microscopic measurements demonstrate the binary nature of these structures.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnitudes of excitonic nonlinearities were compared at 12 K in InGaAs/GaAs multiple quantum well structures with growth directions oriented along the [100] and [111] crystal axes by measuring both the steady-state and time-resolved differential transmission spectra. As expected, the spectra for the [100] sample are indicative of excitonic bleaching at all times and for all excitation levels, and a carrier recombination time of 0.8 ns and a nonlinear cross section (change in absorption coefficient per carrier pair) of ∼8×10−14 cm2 are extracted for the [100] sample. By comparison, for low excitation levels, the spectra for the [111] sample are consistent with a blueshift of the exciton, indicating a screening of the strain-induced piezoelectric field. At higher excitation levels, the spectra are dominated by excitonic bleaching. Under identical 1 ps pulsed excitation conditions, the magnitudes of the changes in the absorption coefficient caused by screening in the [111] sample are comparable to those measured for bleaching in the [100] sample. By contrast, the steady-state changes in the absorption coefficient caused by screening in the [111] sample are an order of magnitude larger than the changes caused by bleaching in the [100] sample. It was demonstrated that the larger steady-state response for the [111] sample is caused by carrier accumulation over the longer (density-dependent) lifetime for that sample and that it is not the result of a larger nonlinear cross section. The slow, nonexponential, density-dependent recombination rates measured for the [111] sample are consistent with carrier escape and drift to screen the entire multiple quantum well structure and are not consistent with screening within the individual quantum wells.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 929-932 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear optical properties of a n-i-p-i structure containing strained superlattice quantum wells in the intrinsic regions are studied using picosecond pump and probe pulses of the same photon energy. For pump fluences as low as 1.1 μJ/cm2, a blue shift of the excitonic resonance, caused by the screening of the built-in space-charge field and the accompanying reduction in the quantum-confined Stark effect, is clearly observed. At higher fluences, the onset of bleaching of the excitonic absorption is observed. The nonlinearities associated with the quantum confined Stark effect in the hetero n-i-p-i are directly compared to those arising from excitonic bleaching in identical strained superlattice quantum wells under flatband conditions. The picosecond time resolution allows a more accurate estimation of the carrier density in the hetero n-i-p-i by ignoring the density-dependent recombination and a quantitative comparison between the strength of the nonlinearities in the two structures. Although such comparisons depend on the optical fluence and structure of the hetero n-i-p-i, we find that the magnitudes of the nonlinearities in these two specific structures are comparable on a per carrier basis, although their spectral signatures are quite distinct.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use picosecond differential spectroscopy to temporally and spectrally resolve the formation and decay of nonlinearities and space-charge fields in a hetero n-i-p-i that contains quantum wells in the intrinsic regions that are composed of all-binary InAs/GaAs short-period strained-layer superlattices. The evolution of the optical response is determined by competition between excitonic bleaching and the excitonic shift caused by screening of the built-in electric field of the n-i-p-i. The relative contributions of the two resulting optical nonlinearities are complicated functions of fluence, time, and wavelength, with the detailed dynamics determined by thermionic emission from the wells, picosecond charge transport over nanometer dimensions, screening, and recombination. At low fluences, excitonic bleaching is the source of an ultrafast nonlinear response that can be turned on and off in 〈10 ps. This initial excitonic bleaching gives way to a blue shift of the exciton as the carriers escape the wells in ∼3 ps and drift to screen the built-in field in 〈10 ps. The blue shift persists until the carriers recombine nonexponentially on microsecond time scales. At higher fluences, excitonic bleaching and the blue shift are observed simultaneously, since only a fraction of the carriers are required to screen the field and the wells remain partially occupied. On the time scale of ∼10 ns, the bleaching contribution disappears as the carriers within the wells recombine, leaving only the persistent blue shift.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7164-7168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report calculations of the linewidth enhancement factor for five midinfrared active region materials. The linewidth enhancement factors for two type-I quantum wells based on InAsSb are 2.5 and 5.4, which represent a reduction of up to a factor of 2.6 with respect to bulk InAs0.91Sb0.09. However, active region materials based on the type-II, InAs/GaInSb system have linewidth enhancement factors near 1.0, which is a factor of 2–5 reduction compared to the type-I quantum wells. The reduction of the linewidth enhancement factor is associated with both a reduction of the mismatch between the conduction and valence band densities of states and the presence of conduction band dispersion. We describe an additional optimization that is possible in the type-II materials: Carefully placed intersubband absorption features can be used to further reduce the linewidth enhancement factor. We show that linewidth enhancement values as low as 0.3 can be obtained in the type-II superlattices when fabricated into a distributed feedback structure. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 713-718 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe temporally and spectrally resolved measurements of the material differential gain, differential refractive index, and linewidth enhancement factor for a multilayer superlattice intended for use in midwave-infrared semiconductor lasers. We find good agreement between measured quantities and theoretical predictions based on a superlattice K⋅p formalism. The superlattice was designed for suppression of Auger recombination and intersubband absorption, and we find that the strategies employed in this process result in other characteristics that are desirable in a semiconductor laser gain medium. Specifically, for carrier densities and wavelengths appropriate to threshold in an optimized cavity configuration, this structure has a differential gain of approximately 1.5×10−15 cm2, a value comparable to that reported for near-infrared strained quantum wells. The peak gain and peak differential gain are nearly spectrally coincident, leading to a small value for the differential index. The large differential gain and small differential index result in a linewidth enhancement factor of less than one. This indicates that filamentation in high-power lasers based on this superlattice should be suppressed and that this structure is attractive for use in midwave-infrared lasers designed for spectrally pure operation. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4678-4682 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoreflectance is used to identify allowed and forbidden transitions in the spectra of as-grown 100 and 50 A(ring) GaAs/AlxGa1−xAs multiple quantum well samples from which no photoreflectance spectra suitable for characterization could be obtained. Features in the piezoreflectance spectra are shown to result from excitonic transition by direct comparison with the absorbance measurements made on semitransparent regions of these samples. Transition energies are extracted from the piezoreflectance spectra using a form of the Aspnes equation appropriate for the first derivative of a Lorentzian.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4187-4191 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dense electron-hole plasma is created in Al0.52Ga0.48As using picosecond excitation with high excess energy. Its properties are studied by time-resolved photoluminescence and transient transmission spectroscopy. Simultaneous emission out of the indirect X and the direct Γ band is observed. Alloy disorder strongly influences the bimolecular recombination by allowing for quasidirect transitions and stimulated emission out of the indirect X band. The electron-hole plasma, whose electrons reside mainly in the X valleys, causes strong optical nonlinearities at the direct absorption edge. A persistent absorption bleaching and large induced refractive-index changes due to band filling of the valence band and induced absorption due to band-gap renormalization are observed.
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