Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 851-853
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the observation of visible-light emission at room temperature from high fluence (0.3–3×1017 cm−2) Si+ implanted thermal SiO2 layers grown on silicon substrates. Significant blue-light emission and an intense broad luminescent band with a peak beyond 750 nm are observed after annealing at high temperature (T≥1000 °C). The red-light emission, present only in the highest fluence implant, is attributed to the luminescence emitted from silicon nanocrystals produced by silicon precipitation. The presence of silicon nanocrystals is confirmed by transmission electron microscopy. Significant blue-light emission is visible after thermal annealing in the 1×1017 cm−2 fluence implant. The peak position shifts from 490 to 540 nm by increasing the annealing cycles temperature. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113408
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