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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6570-6572 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-nitride-oxide-silicon structures with various nitride thicknesses deposited on a 50–nm silicon dioxide layer prepared by a thermochemical reaction of tetraethylorthosilicate (TEOS) have been prepared. Capacitance-voltage (C-V) measurements have been performed after applying a voltage for a fixed time to determine the amount of accumulated interface charge. Infrared measurements have been carried out to obtain qualitative information about the internal stress in the TEOS layer. The accumulated charge and internal stress in TEOS increases with increasing nitride thickness. This observation indicates a lowering of the energy gap of TEOS.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7531-7535 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal processing as a post-oxidation annealing (POA) process is of considerable influence on the quality of thin thermal oxides: The number of defect-related oxide failures is reduced, together with a slight reduction of the intrinsic oxide quality, but to a degree that is of no importance as regards reliability aspects. According to our investigations, it is important that POA is performed after poly-Si deposition and doping, whereas POA after poly-Si patterning is found to be an undesirable process. Infrared spectroscopy indicates stress relaxation caused by the POA treatment, but no change of the SiO2/Si-interface roughness could be observed by high-resolution electron microscopy. This relaxation process was accompanied by the creation of electron traps. Constant-current investigations indicated an enhanced electron trapping in the oxides after POA. This electron trapping increased with increasing POA temperature. The reduced defect-related oxide failures after POA are attributed to a retarded runaway of the injection current by negative space charges.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 4297-4299 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design, development, and performance of a low-cost deposition system for thin film multilayers are presented. The aim for the construction of the apparatus was to prepare multilayer films of variable composition with a single layer thickness ranging from a few to hundreds of angstroms. To ensure a high flexibility of the film stoichiometries up to five different elements can be deposited independently onto the substrate via electron beam sources or Knudsen cells. The design of the transfer system has been kept very simple although it has a secure load–unload system to provide reliable transport from the antechamber to the deposition chamber and vice versa. The films can be deposited simultaneously onto four substrate platelets. The deposition process is controlled by a computer and all process-parameters are monitored. The shutters of the evaporation cells are activated by a computer providing reproducible deposition processes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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