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  • 1
    Electronic Resource
    Electronic Resource
    Ion beam assisted deposition with a duoplasmatron (abstract)a) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2393-2393 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: One of the recent applications of ion sources is their use for ion beam assisted deposition of thin films and coatings. This method combines a coating technique such as evaporation or sputtering with bombardment with ions in the keV energy range. The required ions with defined energy, flux, and impact angle are delivered from an ion source. An apparatus for ion beam assisted evaporation with a duoplasmatron ion source is described. The features of the duoplasmatron with respect to application for ion beam assisted deposition such as beam shape, uniformity and intensity, ion-to-neutral ratio, and focused and defocused mode are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142938
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  • 2
    Electronic Resource
    Electronic Resource
    ALLIGATOR−An apparatus for ion beam assisted deposition with a broad-beam ion source : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2411-2413 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ion beam assisted deposition is a versatile technique for preparing thin films and coatings for various applications. Up to now a prototype setup for research purposes has been used in our laboratory. Processing of industrial standard workpieces requires a high current ion source with broad beam and high uniformity for homogeneous bombardment. In this contribution a new apparatus for large area samples will be described. It is named ALLIGATOR (German acronym of facility for ion assisted evaporation on transverse movable or rotary targets). In order to have a wide energy range available two ion sources are used. One delivers a beam energy up to 1.3 keV. The other is suitable for energies from 5 keV up to 40 keV. The "high-energy'' ion source is a multicusp multiaperture source with 180-mA total current and a beam diameter of 280 mm at the target position.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142946
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  • 3
    Electronic Resource
    Electronic Resource
    Ion beam assisted deposition with a duoplasmatrona) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3058-3062 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: One of the recent applications of ion sources is their use for ion beam assisted deposition of thin films and coatings. This method combines a coating technique such as evaporation or sputtering with bombardment with ions in the keV energy range. The required ions with defined energy, flux, and impact angle are delivered from an ion source. An apparatus for ion beam assisted evaporation with a duoplasmatron ion source is described. The features of the duoplasmatron with respect to application for ion beam assisted deposition such as beam shape, uniformity and intensity, ion-to-neutral ratio, and focused and defocused mode are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142606
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of lamellar eutectic dendrites in undercooled melts (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1643-1649 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic levitation is used to undercool bulk samples of eutectic Ni 21.4 at % Si alloys. Large undercoolings ΔT up to ΔT=220 K are achieved by containerless processing of the melts. Crystal growth velocities are measured as a function of undercooling. The growth kinetics during solidification of the eutectic alloys is controlled by atomic diffusion. A maximum in the relation of the growth velocity on undercooling is observed which is due to the progressively decreasing diffusion coefficient counteracting the enhancement of the driving force of crystallization with increasing undercooling. Microstructure analysis of as-solidified samples reveals colonies of eutectic lamellae enveloped by a nonplanar growth front of a dendritelike morphology. The experimental data are analyzed within current models of crystal growth taking into account a negative temperature gradient in front of the solidification front. While the thermal undercooling causes a dendriticlike morphology of the solidification front, constitutional and curvature undercooling control the formation of the eutectic colonies behind it. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368233
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