Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 1453-1455
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The combination of first-principles total energy calculations and a general kinetic model, which takes into account all processes of association, dissociation, and restructuring, is used to study the kinetics of thermal double donors (TDDs) in silicon over the temperature range of 300–650 °C. A strong correlation is found between the formation rate of TDDs and the loss rate of interstitial oxygen atoms. Also, a close agreement with experiments is obtained. It is found that TDDs grow via consecutive reactions where fast diffusing oxygen dimers and all TDDs capture interstitial oxygen atoms. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1389505
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