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  • American Institute of Physics (AIP)  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Linearity and hysteresis in the magnetoresistive response of (NiFe,NiFeCo)/Cu and Co/Cu/NiFe multilayers in patterned stripes : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6379-6381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linearity and hysteresis in the magnetoresistive (MR) response of NiFe/Cu and NiFeCo/Cu multilayers prepared by ion beam sputtering, and Cu/Co/Cu/NiFe multilayers prepared by MBE are investigated. These characteristics in the linear regions for the second peak of antiferromagnetically coupled NiFe/Cu multilayers are almost the same as those of NiFeCo/Cu ones at 50-Hz ac applied fields. The MR amplitude at the first peak is inferior to that at the second one, whereas, the linearity and hysteresis are superior. In weakly coupled Cu/Co/Cu/NiFe multilayers, a nonhysteretic MR response is obtained at a NiFe layer thickness of 10 A(ring). The linearity and symmetry around the zero magnetic field of the MR curve depend on the Cu layer thickness. When the thicknesses of the NiFe and Cu layers are 10 and 45 A(ring), respectively, good linearity and no hysteresis are observed without biasing techniques. The output levels in the linear regions of three different multilayers are 1.5–2.5 times as large as that of the conventional Permalloy film. These multilayers are promising materials for the fabrication of MR head for ultrahigh density recording.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355356
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  • 2
    Electronic Resource
    Electronic Resource
    Extra current channels in longitudinally biased magnetic tunnel junctions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4688-4690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments on the longitudinal biasing of microsized magnetic tunnel junctions have been conducted using permanent magnets partially overlapping the junction area. The tunneling magnetoresistance ratio showed a strong dependency on the overlap length, since even a 10% overlap of the sensor length resulted in a 25% drop from its initial value without overlap. Analytical and micromagnetic analyses have demonstrated that this decrease comes from extra current channels, located in the regions below the permanent magnets, that shorted a large amount of the sense current from the central active region in the antiparallel magnetization state. The high uniaxial anisotropy field, induced by the permanent magnets in the overlapped regions, created particular magnetic configurations responsible for these low resistance paths. Several alternatives, using antiferromagnetic material in place of the permanent magnets or a modified design of the magnetic tunnel junction structure, are presented and discussed to prevent this extra current channel effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373131
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic tunnel junctions on magnetic shield smoothed by gas cluster ion beam (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6653-6655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, a technique, gas cluster ion beam (GCIB), was introduced to smooth the bottom NiFe magnetic shield for magnetic tunnel junction (MTJ) read heads. The GCIB treatment can bring the surface roughness of the shield from 15 to 20 Å to around 5 Å, and the most of scratch marks can be removed. The efficiency of the GCIB process is dependent on the initial surface morphology. The MTJs grown on the magnetic shield smoothed by the GCIB show that the resistance area product RA is increased from 60 to ∼100 Ω μm2 with the GCIB dose up to 1×1016 ions/cm2, arising from a smooth insulating layer, meanwhile, the tunneling magnetoresistance (TMR) is almost constant or slightly decreases. This GCIB process can also improve breakdown voltage (approximately 0.019 V per 1015 ions/cm2) of the MTJs, and slightly increase the ferromagnetic coupling mainly due to the change of the surface morphology. Using this technology, an RA as low as 3.5–6.5 Ω μm2 together with a TMR of 14%–18% can be obtained for MTJs grown on the GCIB treated NiFe magnetic shield. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359217
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  • 4
    Electronic Resource
    Electronic Resource
    Canting of exchange coupling direction in spin valve with various pinned layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4973-4975 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the problems in spin valve (SV) is the thermal stability of exchange coupling between the pinned magnetic layer and the antiferromagnetic (AFM) layer. During operating in actual hard disk drives, the pinned direction tends to cant toward the longitudinal hard magnet direction and as a result, the output voltage drops. In this study we examine the amount of the cant by the heat and field in SV which used different pinned layer material. The sample we used is Ta(5)/NiFe(9)/Co(1)/Cu(2.7)/pinned layer/AFM/Ta(5) unit nanometers. The pinned layer is three kinds—Co(2), Co(1)/NiFe(1.7), NiFe(3.5), and AFM is two kinds of Ru3Rh15Mn(12 nm), Ru3Rh15Mn(8 nm). The pinned-Co–SV has a larger increase of canting degree than the pinned-Co/NiFe–SV and the pinned-NiFe–SV. The longer the SV is exposed to heat and magnetic field, the more the cant increases. It is likely due to the change of the local pinned direction which in turn may be due to the aftereffect in the minute AFM grains during the heating process.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370062
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical breakdown of the magnetic tunneling junction with an AlOx barrier formed by radical oxidation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5194-5196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the dielectric breakdown in magnetic tunnel junctions (MTJs) was studied. The MTJ structure is Ta50/NiFe100/Co20/AlOx/Co30/RuRhMn100/Ta50 with the bottom lead of Ta50/Cu500/Ta50 and the top lead of Cu2000/Ta50 (in Å), where the tunneling barrier was formed by 2–20 min radical oxygen oxidation of a 10 Å-thick Al layer. The junctions with area from 2×2 to 20×20 μm2 were patterned using the photolithography process, leading to tunneling magnetoresistance up to 17.2% and resistance-area product ranging from 350 Ω μm2 to 200 kΩ μm2. The junctions studied show dc breakdown voltage from 0.7 to 1.3 V, depending on the junction area and the oxidation time. Long oxidation time up to 14 min and a small junction area results in a large dc breakdown voltage. The electrostatic discharge (ESD) of MTJs was tested by using a human body model. The ESD breakdown voltage increases with decreasing junction resistance. These results are discussed in terms of the E-model based on the field-induced distortion of atomic bonds in the oxide barrier. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373292
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of the band gap in InAsyP1−y (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2722-2724 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the band gap in InAsyP1−y (y=0–0.67) has been determined by photoluminescence, x-ray diffraction, and absorption spectra measurements. We found that the measured data within the temperature range of 77–300 K can be expressed by the equation proposed by O'Donnell and Chen. The band gap at 77 K is given by Eg=1.407−1.073y+0.089y2, while the compositional dependence of the band gap observed at 300 K, agrees with the values previously reported. We confirmed that changes in temperature caused a slight change in the bowing parameters, and hence found that the band gap temperature dependence of InAsyP1−y (y=0–1) varies very little with changes in composition (2.5–3.5×10−4 eV/K). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126455
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  • 7
    Electronic Resource
    Electronic Resource
    Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2424-2426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, submicron-size (down to 0.273 μm2) spin–dependent tunnel junctions with resistance as low as ∼30 Ω μm2 have been fabricated, where the tunneling barrier of AlOx was formed by in situ natural oxidation. These junctions annealed at 250 °C for 5 h showed tunneling magnetoresistance (TMR) of 14.3% and 25.8% for the pinned layers of CoFe/RuRhMn and CoFe/PtMn, respectively, while the TMR is further increased to 31.6% for a synthetic antiferromagnetic pinned layer of CoFe/Ru/CoFe/PtMn due to less interdiffusion at CoFe/Ru interface. The investigation has indicated that the growth of ultrathin Al layer is very sensitive to the surface roughness of bottom ferromagnetic electrode, and large surface roughness leads to small junction resistance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126364
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  • 8
    Electronic Resource
    Electronic Resource
    Linear magnetoresistive change at zero field in Cu/Co/Cu/NiFe multilayers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1702-1704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu/Co/Cu/NiFe multilayers were prepared by molecular beam epitaxy and their magnetoresistive (MR) properties in dc and ac magnetic field were studied. With a view to application such as MR head, minor loops of MR transfer curves with applied fields of ±50 Oe were particularly investigated. By optimizing the thickness of each layer, a linear and nonhysteretic MR response was obtained. The output voltage was roughly estimated as two and a half times that of a conventional NiFe element in an ac magnetic field at 50 Hz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110690
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