ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (5)
  • American Institute of Physics (AIP)  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Order on disorder: Copper phthalocyanine thin films on technical substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 466-469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20–50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375017
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electronic structure studies of undoped and nitrogen-doped tetrahedral amorphous carbon using high-resolution electron energy-loss spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3783-3792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of undoped and nitrogen-doped tetrahedral amorphous carbon (ta-C) has been studied using high-resolution electron energy-loss spectroscopy in transmission to determine the local bonding of the carbon and nitrogen atoms. We found that the carbon and nitrogen atoms are mainly sp3-bonded for nitrogen contents up to 10 at. %. However, the data analysis is also consistent with some N atoms occupying trivalent σ or pyrrole configurations. The real (ε1) and imaginary parts (ε2) of the dielectric function were derived over a wide energy range carrying out a Kramers–Kronig analysis of the loss spectra. The ε2 spectra show two features due to the excitation of the π and σ valence states. The π feature is very small in ta-C deposited at 100 eV, consistent with its large sp3 content (∼85%). We have determined the ratios of sp2/sp3-hybridized atoms in the samples by both the C 1s edge and the optical sum rules. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350999
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Interface properties of organic/indium–tin oxide and organic/GeS(001) studied using photoemission spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1535-1540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an investigation of interface properties of the hole transport material N,N′-diphenyl-N,N′-bis (3-methylphenyl)–(1,1′)–biphenyl-4,4′diamine (TPD) on indium–tin oxide (ITO) and on GeS(001) using x-ray and ultraviolet photoelectron spectroscopy. On both the TPD/ITO interface and the TPD/GeS(001) heterojunction we found shifts of the vacuum level indicating a formation of an interfacial dipole barrier. We obtained a barrier for the hole injection for TPD on Ar ion sputter-cleaned ITO of 1.5 eV which is significantly higher than the commonly cited value of 0.5 eV for ozone-oxidized ITO, whereas the interface dipole barrier of 0.3 eV is in good agreement with reported data. At low coverages of TPD on ITO additional features in the C 1s core level spectra were found, which can be ascribed to a partially oxidized TPD species at the interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373851
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Full characterization of the interface between the organic semiconductor copper phthalocyanine and gold (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4872-4878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the interface properties of the molecular organic semiconductor copper phthalocyanine (CuPC) on single crystalline as well as polycrystalline Au using photoemission spectroscopy. Despite the different orientation of the molecules on the two substrates, the observed energy level alignment is identical. We observe the formation of an interface dipole while band bending is very small. In addition, we have carried out complementary studies of the CuPC/GeS(001) interface to pin down photoemission final state effect contributions to the observed energy level shifts. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459620
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Strong chemical interaction between indium tin oxide and phthalocyanines (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2916-2918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the interface properties between indium tin oxide (ITO) and the well-established molecular organic semiconductor copper phthalocyanine (CuPC) and its fluorinated relative copper tetraflourophthalocyanine (CuPCF4) using photoemission spectroscopy. It is shown that a strong chemical interaction occurs between the PC molecules and ITO which indicates the presence of interface states at these technically relevant interfaces. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471936
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...