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Digitale Medien

Passivation of an anodic oxide/p-Si interface stimulated by electron injection (2001)

Dittrich, Th. ; Burke, Th. ; Koch, F.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 4636-4642

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The positive oxide charge (Qox) and the concentration of nonradiative recombination defects (Nit) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during electron injection. Qox and Nit decreased strongly due to electron injection. The observed effect is suggested to be inverse to the negative-bias-temperature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1356431

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2

Digitale Medien

Magnetization dynamics in NiFe thin films induced by short in-plane magnetic field pulses (2001)

Gerrits, Th. ; Hohlfeld, J. ; Gielkens, O. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 7648-7650

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The magnetization dynamics in a thin NiFe film was investigated by applying short in-plane magnetic field pulses while probing the response using a time-resolved magneto-optical Kerr effect setup. In-plane magnetic field pulses, with duration shorter than the relaxation of the system, were generated using a photoconductive switch and by subsequent propagation of current pulses along a waveguide. The field pulses with typical rise and decay times of 10–60 and 500–700 ps, respectively, have a maximum field strength of 9 Oe, by which Permalloy elements of 16 nm thickness and lateral dimensions of 10×20 μm were excited. The observed coherent precession of a ferromagnetic NiFe system had precession frequencies of several GHz and relaxation times on a nanosecond time scale. The dynamic properties observed agree well the Gilberts's precession equation and the static magnetic properties of the elements © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1359462

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3

Digitale Medien

Simulation of the charge transport across grain boundaries in p-type SrTiO3 ceramics under dc load: Debye relaxation and dc bias dependence of long-term conductivity (2002)

Hölbling, Th.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 3037-3043

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A mathematical-physical model to describe the charge transport across grain boundaries in p-type SrTiO3 ceramics in the low-temperature regime for arbitrary dc voltage steps has been developed. The finite element model structure consists of a one-dimensional cross section through a ceramic scenario. Mathematical formulation comprises a coupled system of continuity equations (utilizing Maxwell-Boltzmann transport equations) and Poisson's equation, with the appropriate boundary conditions for a potentiostatic simulation approach. The edges of the model are assumed to be blocking for ionic transport, and penetrable for electronic transport. The model was implemented exploiting routines from the numerical class library DIFFPACK™. After an initial electrostatic simulation a dc bias voltage step is applied. The evolution of the spatial profiles of electric potential, defect concentrations, space-charge density, and electric conductivity, and the current response are calculated. The results for the ceramic model structure confirm the experimentally observed Debye relaxation, and the characteristic dependence of long-term conductivity on the dc bias after space-charge polarization, before the onset of resistance degradation. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1448404

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4

Digitale Medien

Physical phenomena in a coplanar macroscopic plasma display cell. II. Comparisons between experiments and models (2002)

Ganter, R. ; Ouyang, J. ; Callegari, Th. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 1000-1007

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Measurements of infrared and visible emission in a macroscopic discharge cell similar to a plasma display panel (PDP) cell are analyzed using a two-dimensional fluid model of the discharge. The comparisons between experiments and models show a good qualitative agreement but the plasma spreading velocity above the cathode surface is much faster in the experiments. We find that including photoemission (in a simplified way) in the model considerably increases the agreement between experiments and models. With a well-chosen photoemission coefficient, the model reproduces the trends observed in the experiments when the gas mixture (between 2% and 10% of xenon in neon) or the applied voltage is changed. The influence of photoemission on the current rise time and on the velocity of plasma spreading above the dielectric surfaces is more important in the macrocell than in a similar (same dimension × pressure) PDP cell because resonant photon transport does not follow the similarity laws. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1425426

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5

Digitale Medien

The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors (2001)

Scherer, H. ; Weimann, Th. ; Zorin, A. B. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 2528-2532

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The effect of thermal annealing on the properties of Al–AlOx–Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, distinct and reproducible changes of their resistance and capacitance values were found. According to the temperature regime, we observed different behaviors with regard to the resistance changes, namely the tendency to decrease the resistance by annealing at T=200 °C, but to increase the resistance by annealing at T=400 °C. We attribute this behavior to changes in the aluminum oxide barriers of the tunnel junctions. The good reproducibility of these effects with respect to the changes observed allows the proper annealing treatment to be used for postprocess tuning of tunnel junction parameters. Also, the influence of the annealing treatment on the noise properties of the transistors at low frequency was investigated. In no case did the noise figures in the 1/f regime show significant changes. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1389077

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6

Digitale Medien

Hot-hole lasers in III–V semiconductors (2001)

Kinsler, P. ; Wenckebach, W. Th.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 1692-1697

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Following the success of p-Ge hot-hole lasers, there is potential for using other semiconductor materials, notably III–V materials such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and light holes is advantageous, which implies that InSb would make an excellent hot-hole laser. Using our Monte Carlo simulation of both GaAs and InSb hot-hole lasers in combination with a rate equation model, we see that previously accepted criteria used to predict performance are not always reliable, and we suggest suitable alternatives. The simulation results include gain and gain bandwidth as a function of field strength and laser frequency, and alternative field orientations and photon polarizations are considered. Comparisons are made with bulk p-Ge systems. The optimum conditions predicted by our simulation could then be used in the design of quantum-well hot-hole lasers. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1384492

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7

Digitale Medien

Room temperature electroluminescence from a c-Si p-i-n structure (2001)

Dittrich, Th.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 2310-2313

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The time dependent electroluminescence (EL) of c-Si (at 1.1 eV) is investigated at room temperature for a p-i-n structure under excitation with forward biased current pulses. The EL intensity increases by square law at shorter times (〈3 μs) and reaches a steady state value at longer times (〉10 μs). The parabolic dependence of the EL intensity on the current density at the shorter times points to the bimolecular recombination mechanism. The EL response time has been decreased to less than 200 ns for the given p-i-n structure by application of a reverse bias potential. The maximal EL quantum efficiency is of the order of 0.01% for the investigated p-i-n structure and possible ways to increase this value are discussed. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1390310

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8

Digitale Medien

Diffusion photovoltage in poly(p -phenylenevinylene) (2001)

Duzhko, V. ; Dittrich, Th.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 4410-4412

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Photovoltage phenomena in poly(p-phenylenevinylene) (PPV) are investigated under pulsed laser illumination. The photovoltage transients are strongly retarded in time depending on sample thickness, laser intensity, and bias illumination. It is shown that the photovoltage in PPV originates from separation of excess electrons and holes due to their concentration gradient and different diffusion coefficients (diffusion photovoltage). The diffusion coefficient of excess holes is found to be on the order of 1×10−6 cm2/s and it increases with increasing excitation intensity and intensity of bias illumination. The diffusion coefficient of excess electrons is about 1–2 orders of magnitude smaller than for excess holes. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1355721

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9

Digitale Medien

Microstructure and properties of giant magnetoresistive granular Au80Co20 alloys (2001)

Vrenken, H. ; Kooi, B. J. ; De Hosson, J. Th. M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 3381-3387

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The relationship between microstructure and giant magnetoresistance (GMR) of granular Au80Co20 was investigated. Two different processing routes were explored. With the melt spinning technique the microstructure appeared to be so coarse that it was not expected to exhibit any substantial GMR effect. On the other hand, with the procedure of solid-solution annealing and water quenching afterwards, a suitable nanostructure was prepared that showed a GMR of 29% at 10 K and 50 kOe. Subsequent annealing causes coarsening of Co particles. In additional spinodal decomposition occurred for a certain temperature range and a loss of coherency of the Co particles with respect to the Au was observed with high-resolution transmission energy microscopy. At magnetic fields above ∼20 kOe, all annealed alloys showed a saturating magnetization, whereas the resistance is still steadily decreasing, challenging the presumed mathematical relationship between GMR and overall magnetization. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1325381

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10

Digitale Medien

Diagnostics and modeling of a macroscopic plasma display panel cell (2000)

Callegari, Th. ; Ganter, R. ; Boeuf, J. P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 3905-3913

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A macroscopic plasma display discharge cell has been designed in order to more easily study the plasma evolution in dielectric barrier discharges occurring in the much smaller commercial ac plasma display panels (PDPs). The electrodes in the macrocell can be arranged in matrix or coplanar configurations. The dimensions of the cell are 100 times larger than those of typical PDP cells and the gas pressure is 100 times smaller. Although some of the properties of the discharge pulse obviously do not follow the classical similarity laws, we find that the macrocell is a very useful tool for improving our understanding of the discharge in a PDP cell. The large dimensions of the cell and the longer time scale because of the smaller pressure make the plasma diagnostics easier than in a real PDP cell. The results are presented here for discharges in pure neon at 5 Torr. Measurements of the time evolution of the current and imaging of the plasma with an intensified charge coupled device (ICCD) camera are presented in matrix electrode configurations and are compared with previously developed models. The experiment confirms the large power deposition in electron impact excitation of the gas atoms while the plasma spreads over the dielectric surface above the anode. The images obtained with the ICCD camera also show the existence of striations of the plasma near the dielectric surface which were not predicted by the models. Measured and calculated duration and shape of the current pulse are in reasonable agreement. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1308094

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