Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1311-1313
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Etching of SiO2 with low-energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 A(ring)/min have been achieved at ion energies below 100 V. The variation in etch rate has been studied as a function of ECR power, self-induced bias, and position of the wafer relative to the ECR source. This low-energy process can be utilized for cleaning of semiconductor surfaces prior to chemical vapor deposition or metallization processes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103198
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